Plasma implantation for emitter and localized back surface field (BSF) formation in silicon solar cells

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

In order to sustain silicon solar or photovoltaic (PV) industry growth rate and production levels, development of alternate, low-cost manufacturing processes same as dry processing approaches have attracted considerable attention. Plasma implantation of textured surfaces offers an alternate, low-cost approach to form front and back surface doped layers. We report on design and fabrication of a simple, low-cost plasma immersion implantation system. This system is capable of implanting upto 6"-diameter silicon wafers. We have demonstrated of implantation in few minutes with implant activation using long furnace anneals. The junction depths in 0.1-0.4-μm range have been achieved. By optimizing dose, implant energy, and activation profile, high efficiency solar cells can be fabricated.

Original languageEnglish
Pages (from-to)365-372
Number of pages8
JournalEuropean Journal of Scientific Research
Volume24
Issue number3
Publication statusPublished - 2008

Fingerprint

photovoltaic cells
emitters (equipment)
Implantation
Silicon solar cells
Silicon
Solar Cells
silicon
Plasma
Implant
Plasmas
plasma
Costs and Cost Analysis
Alternate
furnaces
solar energy
Activation
Chemical activation
cost
Costs
development level

Keywords

  • Low-cost process
  • Plasma implantation
  • Silicon solar cell

ASJC Scopus subject areas

  • General

Cite this

@article{dddc8c5a4e4c447c9233b929e4f7ed39,
title = "Plasma implantation for emitter and localized back surface field (BSF) formation in silicon solar cells",
abstract = "In order to sustain silicon solar or photovoltaic (PV) industry growth rate and production levels, development of alternate, low-cost manufacturing processes same as dry processing approaches have attracted considerable attention. Plasma implantation of textured surfaces offers an alternate, low-cost approach to form front and back surface doped layers. We report on design and fabrication of a simple, low-cost plasma immersion implantation system. This system is capable of implanting upto 6{"}-diameter silicon wafers. We have demonstrated of implantation in few minutes with implant activation using long furnace anneals. The junction depths in 0.1-0.4-μm range have been achieved. By optimizing dose, implant energy, and activation profile, high efficiency solar cells can be fabricated.",
keywords = "Low-cost process, Plasma implantation, Silicon solar cell",
author = "Kamaruzzaman Sopian and Nilofar Asim and Nowshad Amin and Zaidi, {Saleem H.}",
year = "2008",
language = "English",
volume = "24",
pages = "365--372",
journal = "European Journal of Scientific Research",
issn = "1450-202X",
publisher = "European Journals Inc.",
number = "3",

}

TY - JOUR

T1 - Plasma implantation for emitter and localized back surface field (BSF) formation in silicon solar cells

AU - Sopian, Kamaruzzaman

AU - Asim, Nilofar

AU - Amin, Nowshad

AU - Zaidi, Saleem H.

PY - 2008

Y1 - 2008

N2 - In order to sustain silicon solar or photovoltaic (PV) industry growth rate and production levels, development of alternate, low-cost manufacturing processes same as dry processing approaches have attracted considerable attention. Plasma implantation of textured surfaces offers an alternate, low-cost approach to form front and back surface doped layers. We report on design and fabrication of a simple, low-cost plasma immersion implantation system. This system is capable of implanting upto 6"-diameter silicon wafers. We have demonstrated of implantation in few minutes with implant activation using long furnace anneals. The junction depths in 0.1-0.4-μm range have been achieved. By optimizing dose, implant energy, and activation profile, high efficiency solar cells can be fabricated.

AB - In order to sustain silicon solar or photovoltaic (PV) industry growth rate and production levels, development of alternate, low-cost manufacturing processes same as dry processing approaches have attracted considerable attention. Plasma implantation of textured surfaces offers an alternate, low-cost approach to form front and back surface doped layers. We report on design and fabrication of a simple, low-cost plasma immersion implantation system. This system is capable of implanting upto 6"-diameter silicon wafers. We have demonstrated of implantation in few minutes with implant activation using long furnace anneals. The junction depths in 0.1-0.4-μm range have been achieved. By optimizing dose, implant energy, and activation profile, high efficiency solar cells can be fabricated.

KW - Low-cost process

KW - Plasma implantation

KW - Silicon solar cell

UR - http://www.scopus.com/inward/record.url?scp=65749098998&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=65749098998&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:65749098998

VL - 24

SP - 365

EP - 372

JO - European Journal of Scientific Research

JF - European Journal of Scientific Research

SN - 1450-202X

IS - 3

ER -