Physical properties of thin film Cu2S/ZnxCd1-xS heterojunction solar cells fabricated by aqueous treatment and solid state reaction

T. M. Razykov, V. I. Vialiy, M. A. Khodjaeva

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

A comparative analysis is given of the electrical and photoelectrical properties of thin film Cu2S/ZnxCd1-xS heterojunctions prepared by chemical treatment of ZnxCd1-xS films with a hot aqueous CuCl solution and with CuCl in a solid state reaction. The characteristics of the physicochemical processes taking place in the formation of a Cu2S barrier layer by these two methods are discussed. It is shown that in the solid state reaction the Cu2S layer is formed mainly on the outer surface of the ZnxCd1-xS film, whereas in the aqueous method the barrier layer is formed both on the outer surface and along grain boundaries of the ZnxCd1-xS.

Original languageEnglish
Pages (from-to)1-6
Number of pages6
JournalThin Solid Films
Volume121
Issue number1
DOIs
Publication statusPublished - 9 Nov 1984
Externally publishedYes

Fingerprint

barrier layers
Solid state reactions
Heterojunctions
heterojunctions
Solar cells
Physical properties
solar cells
physical properties
solid state
Thin films
thin films
Grain boundaries
grain boundaries
electrical properties
aqueous solutions

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

Physical properties of thin film Cu2S/ZnxCd1-xS heterojunction solar cells fabricated by aqueous treatment and solid state reaction. / Razykov, T. M.; Vialiy, V. I.; Khodjaeva, M. A.

In: Thin Solid Films, Vol. 121, No. 1, 09.11.1984, p. 1-6.

Research output: Contribution to journalArticle

@article{e414e925d1f04d5f902918cd972d3ed5,
title = "Physical properties of thin film Cu2S/ZnxCd1-xS heterojunction solar cells fabricated by aqueous treatment and solid state reaction",
abstract = "A comparative analysis is given of the electrical and photoelectrical properties of thin film Cu2S/ZnxCd1-xS heterojunctions prepared by chemical treatment of ZnxCd1-xS films with a hot aqueous CuCl solution and with CuCl in a solid state reaction. The characteristics of the physicochemical processes taking place in the formation of a Cu2S barrier layer by these two methods are discussed. It is shown that in the solid state reaction the Cu2S layer is formed mainly on the outer surface of the ZnxCd1-xS film, whereas in the aqueous method the barrier layer is formed both on the outer surface and along grain boundaries of the ZnxCd1-xS.",
author = "Razykov, {T. M.} and Vialiy, {V. I.} and Khodjaeva, {M. A.}",
year = "1984",
month = "11",
day = "9",
doi = "10.1016/0040-6090(84)90518-2",
language = "English",
volume = "121",
pages = "1--6",
journal = "Thin Solid Films",
issn = "0040-6090",
publisher = "Elsevier",
number = "1",

}

TY - JOUR

T1 - Physical properties of thin film Cu2S/ZnxCd1-xS heterojunction solar cells fabricated by aqueous treatment and solid state reaction

AU - Razykov, T. M.

AU - Vialiy, V. I.

AU - Khodjaeva, M. A.

PY - 1984/11/9

Y1 - 1984/11/9

N2 - A comparative analysis is given of the electrical and photoelectrical properties of thin film Cu2S/ZnxCd1-xS heterojunctions prepared by chemical treatment of ZnxCd1-xS films with a hot aqueous CuCl solution and with CuCl in a solid state reaction. The characteristics of the physicochemical processes taking place in the formation of a Cu2S barrier layer by these two methods are discussed. It is shown that in the solid state reaction the Cu2S layer is formed mainly on the outer surface of the ZnxCd1-xS film, whereas in the aqueous method the barrier layer is formed both on the outer surface and along grain boundaries of the ZnxCd1-xS.

AB - A comparative analysis is given of the electrical and photoelectrical properties of thin film Cu2S/ZnxCd1-xS heterojunctions prepared by chemical treatment of ZnxCd1-xS films with a hot aqueous CuCl solution and with CuCl in a solid state reaction. The characteristics of the physicochemical processes taking place in the formation of a Cu2S barrier layer by these two methods are discussed. It is shown that in the solid state reaction the Cu2S layer is formed mainly on the outer surface of the ZnxCd1-xS film, whereas in the aqueous method the barrier layer is formed both on the outer surface and along grain boundaries of the ZnxCd1-xS.

UR - http://www.scopus.com/inward/record.url?scp=0021759035&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0021759035&partnerID=8YFLogxK

U2 - 10.1016/0040-6090(84)90518-2

DO - 10.1016/0040-6090(84)90518-2

M3 - Article

AN - SCOPUS:0021759035

VL - 121

SP - 1

EP - 6

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

IS - 1

ER -