Physical properties of II-VI binary and multi-component compound films and heterostructures fabricated by chemical vapour deposition

T. M. Razykov

Research output: Contribution to journalArticle

37 Citations (Scopus)

Abstract

The physico-chemical processes taking place during chemical vapour deposition (CVD) of CdTe, CdSe, ZnxCd1 - xS, ZnxCd1 - xTe and (ZnSe)x(CdTe)1 - x films from binary and elemental AII and BVI sources in a hydrogen flow in a quasi-closed chamber were analysed. The dependences of the resistivity, transmittance spectrum and band gap on the composition of the films and on the molecular beam intensity ratio during synthesis are discussed. The photovoltaic properties of n-ZnxCd1 - xS/p-CdTe, n-ZnxCd1 - xS/p-Si, n-ZnxCd1 - xS/p-Cu2S and p-ZnxCd1 - xTe/n-CdTe heterostructures were studied. The variation in the energy band discontinuities ΔEc and ΔEv at the interfaces of the heterostructures studied with the composition of the films is considered.

Original languageEnglish
Pages (from-to)301-308
Number of pages8
JournalThin Solid Films
Volume164
Issue numberC
DOIs
Publication statusPublished - 1988
Externally publishedYes

Fingerprint

Heterojunctions
Chemical vapor deposition
Physical properties
physical properties
vapor deposition
Molecular beams
Chemical analysis
Band structure
molecular beams
energy bands
Hydrogen
transmittance
discontinuity
Energy gap
chambers
electrical resistivity
hydrogen
synthesis

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

Physical properties of II-VI binary and multi-component compound films and heterostructures fabricated by chemical vapour deposition. / Razykov, T. M.

In: Thin Solid Films, Vol. 164, No. C, 1988, p. 301-308.

Research output: Contribution to journalArticle

@article{2d54fb6252eb458ab86bea6e35ffc121,
title = "Physical properties of II-VI binary and multi-component compound films and heterostructures fabricated by chemical vapour deposition",
abstract = "The physico-chemical processes taking place during chemical vapour deposition (CVD) of CdTe, CdSe, ZnxCd1 - xS, ZnxCd1 - xTe and (ZnSe)x(CdTe)1 - x films from binary and elemental AII and BVI sources in a hydrogen flow in a quasi-closed chamber were analysed. The dependences of the resistivity, transmittance spectrum and band gap on the composition of the films and on the molecular beam intensity ratio during synthesis are discussed. The photovoltaic properties of n-ZnxCd1 - xS/p-CdTe, n-ZnxCd1 - xS/p-Si, n-ZnxCd1 - xS/p-Cu2S and p-ZnxCd1 - xTe/n-CdTe heterostructures were studied. The variation in the energy band discontinuities ΔEc and ΔEv at the interfaces of the heterostructures studied with the composition of the films is considered.",
author = "Razykov, {T. M.}",
year = "1988",
doi = "10.1016/0040-6090(88)90153-8",
language = "English",
volume = "164",
pages = "301--308",
journal = "Thin Solid Films",
issn = "0040-6090",
publisher = "Elsevier",
number = "C",

}

TY - JOUR

T1 - Physical properties of II-VI binary and multi-component compound films and heterostructures fabricated by chemical vapour deposition

AU - Razykov, T. M.

PY - 1988

Y1 - 1988

N2 - The physico-chemical processes taking place during chemical vapour deposition (CVD) of CdTe, CdSe, ZnxCd1 - xS, ZnxCd1 - xTe and (ZnSe)x(CdTe)1 - x films from binary and elemental AII and BVI sources in a hydrogen flow in a quasi-closed chamber were analysed. The dependences of the resistivity, transmittance spectrum and band gap on the composition of the films and on the molecular beam intensity ratio during synthesis are discussed. The photovoltaic properties of n-ZnxCd1 - xS/p-CdTe, n-ZnxCd1 - xS/p-Si, n-ZnxCd1 - xS/p-Cu2S and p-ZnxCd1 - xTe/n-CdTe heterostructures were studied. The variation in the energy band discontinuities ΔEc and ΔEv at the interfaces of the heterostructures studied with the composition of the films is considered.

AB - The physico-chemical processes taking place during chemical vapour deposition (CVD) of CdTe, CdSe, ZnxCd1 - xS, ZnxCd1 - xTe and (ZnSe)x(CdTe)1 - x films from binary and elemental AII and BVI sources in a hydrogen flow in a quasi-closed chamber were analysed. The dependences of the resistivity, transmittance spectrum and band gap on the composition of the films and on the molecular beam intensity ratio during synthesis are discussed. The photovoltaic properties of n-ZnxCd1 - xS/p-CdTe, n-ZnxCd1 - xS/p-Si, n-ZnxCd1 - xS/p-Cu2S and p-ZnxCd1 - xTe/n-CdTe heterostructures were studied. The variation in the energy band discontinuities ΔEc and ΔEv at the interfaces of the heterostructures studied with the composition of the films is considered.

UR - http://www.scopus.com/inward/record.url?scp=0024088179&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0024088179&partnerID=8YFLogxK

U2 - 10.1016/0040-6090(88)90153-8

DO - 10.1016/0040-6090(88)90153-8

M3 - Article

AN - SCOPUS:0024088179

VL - 164

SP - 301

EP - 308

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

IS - C

ER -