Physical properties of Fe doped In2O3 magnetic semiconductor annealed in hydrogen at different temperature

H. Baqiah, Noor Baa`Yah Ibrahim, S. A. Halim, S. K. Chen, K. P. Lim, M. M Awang Kechik

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

The effects of hydrogen-annealing at different temperatures (300, 400, 500 and 600 °C) on physical properties of In2-xFexO3 (x=0.025) thin film were investigated. The structural measurement using XRD shows that the film has a single In2O3 phase structure when annealed in hydrogen at 300-500 °C, however when annealed in hydrogen at 600 °C the film has a mixed phase structure of In2O3 and In phases. The electrical measurements show that the carrier concentrations of the films decrease with the increase of hydrogen-annealing temperature in the range 300-500 °C. The optical band gap of the films decreases with increasing hydrogen-annealing temperatures. The saturation magnetisation, Ms, and coercivity of films increase with the increment of hydrogen annealing temperature. The film annealed at 300 °C has the lowest resistivity, ρ=0.03 Ω cm, and the highest carrier concentrations, n=6.8×1019 cm-3, while film annealed at 500 °C has both good electrical (ρ=0.05 Ω.cm and n=2.2×1019 cm-3) and magnetic properties, Ms=21 emu/cm-3.

Original languageEnglish
Pages (from-to)102-107
Number of pages6
JournalJournal of Magnetism and Magnetic Materials
Volume401
DOIs
Publication statusPublished - 1 Mar 2016

Fingerprint

Magnetic semiconductors
Hydrogen
Physical properties
physical properties
hydrogen
Annealing
annealing
Temperature
Phase structure
temperature
Carrier concentration
Optical band gaps
Saturation magnetization
Coercive force
electrical measurement
coercivity
Magnetic properties
magnetic properties
saturation
Thin films

Keywords

  • Hydrogen-annealing
  • Magnetic semiconductors
  • Magnetisation
  • Resistivity
  • Sol-gel

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

Cite this

Physical properties of Fe doped In2O3 magnetic semiconductor annealed in hydrogen at different temperature. / Baqiah, H.; Ibrahim, Noor Baa`Yah; Halim, S. A.; Chen, S. K.; Lim, K. P.; Kechik, M. M Awang.

In: Journal of Magnetism and Magnetic Materials, Vol. 401, 01.03.2016, p. 102-107.

Research output: Contribution to journalArticle

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