Photovoltaic properties of Si3N4 layer on silicon solar cell using Silvaco software

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Abstract

In this research, the silicon dioxide (SiO2) and silicon nitride (Si3N4) layer have been modelled and fabricated on silicon solar cell by using Silvaco Software Packaging. Basically the function of SiO2 and Si3N4 materials are an anti-reflective coating (ARC) on solar cell devices that based on refractive index of each material. The application of ARC is a good method to improve the solar cell construction. This fabrication carried out on high temperature during annealing process from 800°C to 1050°C when the ARC layer is 50 nm. The photovoltaic properties of Si3N4 layer have been compared with SiO2 layer to determine which material is suitable in fabricating single layer ARC. Short circuit current density Jsc, open circuit voltage Voc and pn junction were measured as a function of both layers material and the results of fill factor (FF) and power conversion efficiency, η are discussed. For SiO2 results, the FF value are approximately 0.758 and efficiency, η is nearly 9.43%. In annealing process, the temperature become higher resulted increasing of pn junction, but not to Voc and Jsc values. The Voc and Jsc were slowly decreased when temperature increased. As for Si3N4 result, the calculated FF in range of 0.757-0.758 and efficiency η is around 9.55-9.57%. In annealing process, the temperature increasing constantly follows the increasing of pn junction and Jsc, meanwhile the Voc is decreased slowly. The optimum efficiency from SiO2 layer is 9.428% when temperature reaches at 950°C, while the optimum efficiency of Si3N4 layer is 9.565% when temperature at 1050°C. Solar cell simulation could be useful for time saving and cost consumption, and also cheaper and faster compared to physical experimental.

Original languageEnglish
Pages (from-to)447-453
Number of pages7
JournalEuropean Journal of Scientific Research
Volume29
Issue number4
Publication statusPublished - 2009

Fingerprint

photovoltaic cells
solar energy
Silicon solar cells
Silicon
Solar Cells
silicon
Reflective coatings
Software
Antireflective Coating
SiO2
software
coatings
Temperature
annealing
coating
Solar cells
temperature
Annealing
Refractometry
fill

Keywords

  • Efficiency
  • SiN
  • Silicon solar cell
  • Silvaco
  • SiO

ASJC Scopus subject areas

  • General

Cite this

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title = "Photovoltaic properties of Si3N4 layer on silicon solar cell using Silvaco software",
abstract = "In this research, the silicon dioxide (SiO2) and silicon nitride (Si3N4) layer have been modelled and fabricated on silicon solar cell by using Silvaco Software Packaging. Basically the function of SiO2 and Si3N4 materials are an anti-reflective coating (ARC) on solar cell devices that based on refractive index of each material. The application of ARC is a good method to improve the solar cell construction. This fabrication carried out on high temperature during annealing process from 800°C to 1050°C when the ARC layer is 50 nm. The photovoltaic properties of Si3N4 layer have been compared with SiO2 layer to determine which material is suitable in fabricating single layer ARC. Short circuit current density Jsc, open circuit voltage Voc and pn junction were measured as a function of both layers material and the results of fill factor (FF) and power conversion efficiency, η are discussed. For SiO2 results, the FF value are approximately 0.758 and efficiency, η is nearly 9.43{\%}. In annealing process, the temperature become higher resulted increasing of pn junction, but not to Voc and Jsc values. The Voc and Jsc were slowly decreased when temperature increased. As for Si3N4 result, the calculated FF in range of 0.757-0.758 and efficiency η is around 9.55-9.57{\%}. In annealing process, the temperature increasing constantly follows the increasing of pn junction and Jsc, meanwhile the Voc is decreased slowly. The optimum efficiency from SiO2 layer is 9.428{\%} when temperature reaches at 950°C, while the optimum efficiency of Si3N4 layer is 9.565{\%} when temperature at 1050°C. Solar cell simulation could be useful for time saving and cost consumption, and also cheaper and faster compared to physical experimental.",
keywords = "Efficiency, SiN, Silicon solar cell, Silvaco, SiO",
author = "A. Lennie and Huda Abdullah and Mustaza, {Seri Mastura} and Kamaruzzaman Sopian",
year = "2009",
language = "English",
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AU - Lennie, A.

AU - Abdullah, Huda

AU - Mustaza, Seri Mastura

AU - Sopian, Kamaruzzaman

PY - 2009

Y1 - 2009

N2 - In this research, the silicon dioxide (SiO2) and silicon nitride (Si3N4) layer have been modelled and fabricated on silicon solar cell by using Silvaco Software Packaging. Basically the function of SiO2 and Si3N4 materials are an anti-reflective coating (ARC) on solar cell devices that based on refractive index of each material. The application of ARC is a good method to improve the solar cell construction. This fabrication carried out on high temperature during annealing process from 800°C to 1050°C when the ARC layer is 50 nm. The photovoltaic properties of Si3N4 layer have been compared with SiO2 layer to determine which material is suitable in fabricating single layer ARC. Short circuit current density Jsc, open circuit voltage Voc and pn junction were measured as a function of both layers material and the results of fill factor (FF) and power conversion efficiency, η are discussed. For SiO2 results, the FF value are approximately 0.758 and efficiency, η is nearly 9.43%. In annealing process, the temperature become higher resulted increasing of pn junction, but not to Voc and Jsc values. The Voc and Jsc were slowly decreased when temperature increased. As for Si3N4 result, the calculated FF in range of 0.757-0.758 and efficiency η is around 9.55-9.57%. In annealing process, the temperature increasing constantly follows the increasing of pn junction and Jsc, meanwhile the Voc is decreased slowly. The optimum efficiency from SiO2 layer is 9.428% when temperature reaches at 950°C, while the optimum efficiency of Si3N4 layer is 9.565% when temperature at 1050°C. Solar cell simulation could be useful for time saving and cost consumption, and also cheaper and faster compared to physical experimental.

AB - In this research, the silicon dioxide (SiO2) and silicon nitride (Si3N4) layer have been modelled and fabricated on silicon solar cell by using Silvaco Software Packaging. Basically the function of SiO2 and Si3N4 materials are an anti-reflective coating (ARC) on solar cell devices that based on refractive index of each material. The application of ARC is a good method to improve the solar cell construction. This fabrication carried out on high temperature during annealing process from 800°C to 1050°C when the ARC layer is 50 nm. The photovoltaic properties of Si3N4 layer have been compared with SiO2 layer to determine which material is suitable in fabricating single layer ARC. Short circuit current density Jsc, open circuit voltage Voc and pn junction were measured as a function of both layers material and the results of fill factor (FF) and power conversion efficiency, η are discussed. For SiO2 results, the FF value are approximately 0.758 and efficiency, η is nearly 9.43%. In annealing process, the temperature become higher resulted increasing of pn junction, but not to Voc and Jsc values. The Voc and Jsc were slowly decreased when temperature increased. As for Si3N4 result, the calculated FF in range of 0.757-0.758 and efficiency η is around 9.55-9.57%. In annealing process, the temperature increasing constantly follows the increasing of pn junction and Jsc, meanwhile the Voc is decreased slowly. The optimum efficiency from SiO2 layer is 9.428% when temperature reaches at 950°C, while the optimum efficiency of Si3N4 layer is 9.565% when temperature at 1050°C. Solar cell simulation could be useful for time saving and cost consumption, and also cheaper and faster compared to physical experimental.

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