Photoluminescence study of the optically active, G-centre on pre-amorphised silicon by utilizing ion implantation technique

Dilla Duryha Berhanuddin, M. A. Lourenco, R. M. Gwilliam, K. P. Homewood

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

We report a new approach of generating the dicarbon G-centre on silicon substrates by utilizing technique that is fully compatible with the standard silicon ultra-large-scale integration (ULSI) technology. Silicon wafers were implanted with carbon and irradiated with high energy protons to produce self-interstitials that are crucial in the formation of the G-centre. Prior to that, all the samples were pre-amorphised with germanium. Photoluminescence (PL) measurements at 80 K were carried out to investigate the point defect mediated luminescence of the G-centre with a wavelength of 1280 nm. The results show a prominent, sharp luminescence at the carbon related, G centre in majority of the samples.

Original languageEnglish
Title of host publication2016 IEEE International Conference on Semiconductor Electronics, ICSE 2016 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages256-259
Number of pages4
Volume2016-September
ISBN (Electronic)9781509023837
DOIs
Publication statusPublished - 21 Sep 2016
Event12th IEEE International Conference on Semiconductor Electronics, ICSE 2016 - Bangsar, Kuala Lumpur, Malaysia
Duration: 17 Aug 201619 Aug 2016

Other

Other12th IEEE International Conference on Semiconductor Electronics, ICSE 2016
CountryMalaysia
CityBangsar, Kuala Lumpur
Period17/8/1619/8/16

Fingerprint

Silicon
Ion implantation
Luminescence
Photoluminescence
Carbon
ULSI circuits
Germanium
Point defects
Silicon wafers
Protons
Wavelength
Substrates

Keywords

  • G-centre
  • ion implantation
  • photoluminescence
  • point-defect
  • pre-amorphization

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Berhanuddin, D. D., Lourenco, M. A., Gwilliam, R. M., & Homewood, K. P. (2016). Photoluminescence study of the optically active, G-centre on pre-amorphised silicon by utilizing ion implantation technique. In 2016 IEEE International Conference on Semiconductor Electronics, ICSE 2016 - Proceedings (Vol. 2016-September, pp. 256-259). [7573640] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SMELEC.2016.7573640

Photoluminescence study of the optically active, G-centre on pre-amorphised silicon by utilizing ion implantation technique. / Berhanuddin, Dilla Duryha; Lourenco, M. A.; Gwilliam, R. M.; Homewood, K. P.

2016 IEEE International Conference on Semiconductor Electronics, ICSE 2016 - Proceedings. Vol. 2016-September Institute of Electrical and Electronics Engineers Inc., 2016. p. 256-259 7573640.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Berhanuddin, DD, Lourenco, MA, Gwilliam, RM & Homewood, KP 2016, Photoluminescence study of the optically active, G-centre on pre-amorphised silicon by utilizing ion implantation technique. in 2016 IEEE International Conference on Semiconductor Electronics, ICSE 2016 - Proceedings. vol. 2016-September, 7573640, Institute of Electrical and Electronics Engineers Inc., pp. 256-259, 12th IEEE International Conference on Semiconductor Electronics, ICSE 2016, Bangsar, Kuala Lumpur, Malaysia, 17/8/16. https://doi.org/10.1109/SMELEC.2016.7573640
Berhanuddin DD, Lourenco MA, Gwilliam RM, Homewood KP. Photoluminescence study of the optically active, G-centre on pre-amorphised silicon by utilizing ion implantation technique. In 2016 IEEE International Conference on Semiconductor Electronics, ICSE 2016 - Proceedings. Vol. 2016-September. Institute of Electrical and Electronics Engineers Inc. 2016. p. 256-259. 7573640 https://doi.org/10.1109/SMELEC.2016.7573640
Berhanuddin, Dilla Duryha ; Lourenco, M. A. ; Gwilliam, R. M. ; Homewood, K. P. / Photoluminescence study of the optically active, G-centre on pre-amorphised silicon by utilizing ion implantation technique. 2016 IEEE International Conference on Semiconductor Electronics, ICSE 2016 - Proceedings. Vol. 2016-September Institute of Electrical and Electronics Engineers Inc., 2016. pp. 256-259
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