Photoluminescence study of highly efficient CdTe thin film solar cells

T. Okamoto, Nowshad Amin, A. Yamada, M. Konagai, T. Aramoto, H. Ohyama, A. Hanafusa, M. Murozono, R. Asomoza, A. Merkulov

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Highly efficient CdTe thin film solar cells with a glass/CdS/CdTe/Cu-doped carbon/Ag structure, were characterized by low temperature photoluminescence (PL) measurement. A broad 1.42 eV band probably due to V Cd-Cl defect complexes appeared as a result of the CdCl 2 treatment. In the PL spectra of the heat-treated CdTe after the screen-printing of the Cu-doped carbon paste, a neutral-acceptor bound exciton (A Cu 0, X) line at 1.590 eV was observed, suggesting that Cu atoms were incorporated into CdTe as effective acceptors after the heat treatment. Furthermore, CdS/CdTe junction PL was measured, and two broad emissions at around 1.52 and 1.37 eV, lower than the PL peak energy in the CdTe surface, were observed. This result indicates that CdS 1-xTe x mixed crystal layer was formed at the CdS/CdTe interface.

Original languageEnglish
Title of host publicationConference Record of the IEEE Photovoltaic Specialists Conference
Editors Anon
PublisherIEEE
Pages547-550
Number of pages4
Publication statusPublished - 1997
Externally publishedYes
EventProceedings of the 1997 IEEE 26th Photovoltaic Specialists Conference - Anaheim, CA, USA
Duration: 29 Sep 19973 Oct 1997

Other

OtherProceedings of the 1997 IEEE 26th Photovoltaic Specialists Conference
CityAnaheim, CA, USA
Period29/9/973/10/97

Fingerprint

Photoluminescence
solar cells
photoluminescence
thin films
Carbon
Screen printing
carbon
mixed crystals
Excitons
printing
heat treatment
Heat treatment
excitons
Glass
heat
Atoms
Defects
Crystals
Thin film solar cells
glass

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Condensed Matter Physics

Cite this

Okamoto, T., Amin, N., Yamada, A., Konagai, M., Aramoto, T., Ohyama, H., ... Merkulov, A. (1997). Photoluminescence study of highly efficient CdTe thin film solar cells. In Anon (Ed.), Conference Record of the IEEE Photovoltaic Specialists Conference (pp. 547-550). IEEE.

Photoluminescence study of highly efficient CdTe thin film solar cells. / Okamoto, T.; Amin, Nowshad; Yamada, A.; Konagai, M.; Aramoto, T.; Ohyama, H.; Hanafusa, A.; Murozono, M.; Asomoza, R.; Merkulov, A.

Conference Record of the IEEE Photovoltaic Specialists Conference. ed. / Anon. IEEE, 1997. p. 547-550.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Okamoto, T, Amin, N, Yamada, A, Konagai, M, Aramoto, T, Ohyama, H, Hanafusa, A, Murozono, M, Asomoza, R & Merkulov, A 1997, Photoluminescence study of highly efficient CdTe thin film solar cells. in Anon (ed.), Conference Record of the IEEE Photovoltaic Specialists Conference. IEEE, pp. 547-550, Proceedings of the 1997 IEEE 26th Photovoltaic Specialists Conference, Anaheim, CA, USA, 29/9/97.
Okamoto T, Amin N, Yamada A, Konagai M, Aramoto T, Ohyama H et al. Photoluminescence study of highly efficient CdTe thin film solar cells. In Anon, editor, Conference Record of the IEEE Photovoltaic Specialists Conference. IEEE. 1997. p. 547-550
Okamoto, T. ; Amin, Nowshad ; Yamada, A. ; Konagai, M. ; Aramoto, T. ; Ohyama, H. ; Hanafusa, A. ; Murozono, M. ; Asomoza, R. ; Merkulov, A. / Photoluminescence study of highly efficient CdTe thin film solar cells. Conference Record of the IEEE Photovoltaic Specialists Conference. editor / Anon. IEEE, 1997. pp. 547-550
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abstract = "Highly efficient CdTe thin film solar cells with a glass/CdS/CdTe/Cu-doped carbon/Ag structure, were characterized by low temperature photoluminescence (PL) measurement. A broad 1.42 eV band probably due to V Cd-Cl defect complexes appeared as a result of the CdCl 2 treatment. In the PL spectra of the heat-treated CdTe after the screen-printing of the Cu-doped carbon paste, a neutral-acceptor bound exciton (A Cu 0, X) line at 1.590 eV was observed, suggesting that Cu atoms were incorporated into CdTe as effective acceptors after the heat treatment. Furthermore, CdS/CdTe junction PL was measured, and two broad emissions at around 1.52 and 1.37 eV, lower than the PL peak energy in the CdTe surface, were observed. This result indicates that CdS 1-xTe x mixed crystal layer was formed at the CdS/CdTe interface.",
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AU - Ohyama, H.

AU - Hanafusa, A.

AU - Murozono, M.

AU - Asomoza, R.

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N2 - Highly efficient CdTe thin film solar cells with a glass/CdS/CdTe/Cu-doped carbon/Ag structure, were characterized by low temperature photoluminescence (PL) measurement. A broad 1.42 eV band probably due to V Cd-Cl defect complexes appeared as a result of the CdCl 2 treatment. In the PL spectra of the heat-treated CdTe after the screen-printing of the Cu-doped carbon paste, a neutral-acceptor bound exciton (A Cu 0, X) line at 1.590 eV was observed, suggesting that Cu atoms were incorporated into CdTe as effective acceptors after the heat treatment. Furthermore, CdS/CdTe junction PL was measured, and two broad emissions at around 1.52 and 1.37 eV, lower than the PL peak energy in the CdTe surface, were observed. This result indicates that CdS 1-xTe x mixed crystal layer was formed at the CdS/CdTe interface.

AB - Highly efficient CdTe thin film solar cells with a glass/CdS/CdTe/Cu-doped carbon/Ag structure, were characterized by low temperature photoluminescence (PL) measurement. A broad 1.42 eV band probably due to V Cd-Cl defect complexes appeared as a result of the CdCl 2 treatment. In the PL spectra of the heat-treated CdTe after the screen-printing of the Cu-doped carbon paste, a neutral-acceptor bound exciton (A Cu 0, X) line at 1.590 eV was observed, suggesting that Cu atoms were incorporated into CdTe as effective acceptors after the heat treatment. Furthermore, CdS/CdTe junction PL was measured, and two broad emissions at around 1.52 and 1.37 eV, lower than the PL peak energy in the CdTe surface, were observed. This result indicates that CdS 1-xTe x mixed crystal layer was formed at the CdS/CdTe interface.

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