Photoluminescence investigation of high quality GaAs1-x Bi x on GaAs

Abdul Rahman Mohmad, F. Bastiman, J. S. Ng, S. J. Sweeney, J. P R David

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Abstract

Photoluminescence (PL) of GaAs0.97 Bi0.03 alloy was measured over a wide range of temperatures and excitation powers. Room temperature PL with peak wavelength of 1038 nm and full-width-half-maximum of 75 meV was observed which is relatively low for this composition. The improved quality is believed due to reduced alloy fluctuations by growing at relatively high temperature. The temperature dependence of PL peak energy indicated significant exciton localization at low temperatures. Furthermore, the band gap temperature dependence was found to be weaker than GaAs. An analysis of dominant carrier recombination mechanism(s) was also carried out indicating that radiative recombination is dominant at low temperature.

Original languageEnglish
Article number122107
JournalApplied Physics Letters
Volume98
Issue number12
DOIs
Publication statusPublished - 21 Mar 2011

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photoluminescence
temperature dependence
radiative recombination
excitons
room temperature
wavelengths
excitation
temperature
energy

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Photoluminescence investigation of high quality GaAs1-x Bi x on GaAs. / Mohmad, Abdul Rahman; Bastiman, F.; Ng, J. S.; Sweeney, S. J.; David, J. P R.

In: Applied Physics Letters, Vol. 98, No. 12, 122107, 21.03.2011.

Research output: Contribution to journalArticle

Mohmad, Abdul Rahman ; Bastiman, F. ; Ng, J. S. ; Sweeney, S. J. ; David, J. P R. / Photoluminescence investigation of high quality GaAs1-x Bi x on GaAs. In: Applied Physics Letters. 2011 ; Vol. 98, No. 12.
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