Photoluminescence from localized states in GaAsBi epilayers

Abdul Rahman Mohmad, Burhanuddin Yeop Majlis, F. Bastiman, C. J. Hunter, R. D. Richards, J. S. Ng, J. P R David

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

The structural and optical properties of GaAs1-xBix samples with x = 0.048 and 0.06 were investigated by high resolution X-ray diffraction (HR-XRD) and photoluminescence (PL). The HR-XRD results show that both samples have a smooth and coherent GaAs1-xBix/GaAs interface. The PL peak energy shows an S-shape behavior with temperature (10 K to room temperature) which is an evidence of carrier localizations. An Arrhenius analysis reveals that the thermal quenching activation energy is 30 and 19 meV for the GaAs0.952Bi0.048 and GaAs0.94Bi0.06 sample, respectively. It was found that the activation energy is not necessarily originated from alloy fluctuations but may also due to CuPt ordering-induced band gap fluctuations. The power dependent PL indicates that the localized energy states are continuously present and located up to 40-47 meV from the valence band.

Original languageEnglish
Title of host publicationIEEE International Conference on Semiconductor Electronics, Proceedings, ICSE
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages354-357
Number of pages4
ISBN (Print)9781479957606
DOIs
Publication statusPublished - 10 Oct 2014
Event11th IEEE International Conference on Semiconductor Electronics, ICSE 2014 - Kuala Lumpur
Duration: 27 Aug 201429 Aug 2014

Other

Other11th IEEE International Conference on Semiconductor Electronics, ICSE 2014
CityKuala Lumpur
Period27/8/1429/8/14

Fingerprint

Epilayers
Photoluminescence
Activation energy
X ray diffraction
Valence bands
Electron energy levels
Structural properties
Quenching
Energy gap
Optical properties
Temperature

Keywords

  • activation energy
  • GaAsBi alloy
  • localization effects
  • photoluminescence

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Mohmad, A. R., Yeop Majlis, B., Bastiman, F., Hunter, C. J., Richards, R. D., Ng, J. S., & David, J. P. R. (2014). Photoluminescence from localized states in GaAsBi epilayers. In IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE (pp. 354-357). [6920871] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SMELEC.2014.6920871

Photoluminescence from localized states in GaAsBi epilayers. / Mohmad, Abdul Rahman; Yeop Majlis, Burhanuddin; Bastiman, F.; Hunter, C. J.; Richards, R. D.; Ng, J. S.; David, J. P R.

IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. Institute of Electrical and Electronics Engineers Inc., 2014. p. 354-357 6920871.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Mohmad, AR, Yeop Majlis, B, Bastiman, F, Hunter, CJ, Richards, RD, Ng, JS & David, JPR 2014, Photoluminescence from localized states in GaAsBi epilayers. in IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE., 6920871, Institute of Electrical and Electronics Engineers Inc., pp. 354-357, 11th IEEE International Conference on Semiconductor Electronics, ICSE 2014, Kuala Lumpur, 27/8/14. https://doi.org/10.1109/SMELEC.2014.6920871
Mohmad AR, Yeop Majlis B, Bastiman F, Hunter CJ, Richards RD, Ng JS et al. Photoluminescence from localized states in GaAsBi epilayers. In IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. Institute of Electrical and Electronics Engineers Inc. 2014. p. 354-357. 6920871 https://doi.org/10.1109/SMELEC.2014.6920871
Mohmad, Abdul Rahman ; Yeop Majlis, Burhanuddin ; Bastiman, F. ; Hunter, C. J. ; Richards, R. D. ; Ng, J. S. ; David, J. P R. / Photoluminescence from localized states in GaAsBi epilayers. IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. Institute of Electrical and Electronics Engineers Inc., 2014. pp. 354-357
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