PH Sensing characteristics of silicon nitride as sensing membrane based ISFET sensor for artificial kidney

Mas Syarafina Norzin, Azrul Azlan Hamzah, Farahdiana Wan Yunus, Jumril Yunas, Burhanuddin Yeop Majlis

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Field Effect sensor are widely used for detecting various target of analytes in chemical and biological solutions. The electrochemical sensor like Ion Sensitive Filed Effect Transistor (ISFETs) is the primitive structure for biosensor. This paper presents ISFET based on pH sensor modelled using COMSOL Multiphysiscs for artificial kidney. In this paper, pH characterizations of ISFET sensor with silicon nitride (Si3N4) as sensing membrane were discussed. The measurement were includes various pH value from 3 to 11. The pH sensitivity of ISFET by using Si3N4as sensing membrane give 44.4 mV/pH. Besides, this ISFET sensor is made to relate with microelectrode arrays with a tapered profile which the flow of red blood cell from the channel will flow into the electrode and ISFET biosensor then take place as ions determination.

Original languageEnglish
Title of host publication2018 IEEE International Conference on Semiconductor Electronics, ICSE 2018 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages124-127
Number of pages4
Volume2018-August
ISBN (Electronic)9781538652831
DOIs
Publication statusPublished - 3 Oct 2018
Event13th IEEE International Conference on Semiconductor Electronics, ICSE 2018 - Kuala Lumpur, Malaysia
Duration: 15 Aug 201817 Aug 2018

Other

Other13th IEEE International Conference on Semiconductor Electronics, ICSE 2018
CountryMalaysia
CityKuala Lumpur
Period15/8/1817/8/18

Fingerprint

Silicon nitride
Transistors
Ions
Membranes
Sensors
Biosensors
pH sensors
Electrochemical sensors
Microelectrodes
Channel flow
silicon nitride
Blood
Cells
Electrodes

Keywords

  • artificial kidney
  • ISFET sensor
  • microelectrode arrays
  • pH characterization

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Norzin, M. S., Hamzah, A. A., Yunus, F. W., Yunas, J., & Yeop Majlis, B. (2018). PH Sensing characteristics of silicon nitride as sensing membrane based ISFET sensor for artificial kidney. In 2018 IEEE International Conference on Semiconductor Electronics, ICSE 2018 - Proceedings (Vol. 2018-August, pp. 124-127). [8481303] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SMELEC.2018.8481303

PH Sensing characteristics of silicon nitride as sensing membrane based ISFET sensor for artificial kidney. / Norzin, Mas Syarafina; Hamzah, Azrul Azlan; Yunus, Farahdiana Wan; Yunas, Jumril; Yeop Majlis, Burhanuddin.

2018 IEEE International Conference on Semiconductor Electronics, ICSE 2018 - Proceedings. Vol. 2018-August Institute of Electrical and Electronics Engineers Inc., 2018. p. 124-127 8481303.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Norzin, MS, Hamzah, AA, Yunus, FW, Yunas, J & Yeop Majlis, B 2018, PH Sensing characteristics of silicon nitride as sensing membrane based ISFET sensor for artificial kidney. in 2018 IEEE International Conference on Semiconductor Electronics, ICSE 2018 - Proceedings. vol. 2018-August, 8481303, Institute of Electrical and Electronics Engineers Inc., pp. 124-127, 13th IEEE International Conference on Semiconductor Electronics, ICSE 2018, Kuala Lumpur, Malaysia, 15/8/18. https://doi.org/10.1109/SMELEC.2018.8481303
Norzin MS, Hamzah AA, Yunus FW, Yunas J, Yeop Majlis B. PH Sensing characteristics of silicon nitride as sensing membrane based ISFET sensor for artificial kidney. In 2018 IEEE International Conference on Semiconductor Electronics, ICSE 2018 - Proceedings. Vol. 2018-August. Institute of Electrical and Electronics Engineers Inc. 2018. p. 124-127. 8481303 https://doi.org/10.1109/SMELEC.2018.8481303
Norzin, Mas Syarafina ; Hamzah, Azrul Azlan ; Yunus, Farahdiana Wan ; Yunas, Jumril ; Yeop Majlis, Burhanuddin. / PH Sensing characteristics of silicon nitride as sensing membrane based ISFET sensor for artificial kidney. 2018 IEEE International Conference on Semiconductor Electronics, ICSE 2018 - Proceedings. Vol. 2018-August Institute of Electrical and Electronics Engineers Inc., 2018. pp. 124-127
@inproceedings{906bc298c2d04050899765f03af70428,
title = "PH Sensing characteristics of silicon nitride as sensing membrane based ISFET sensor for artificial kidney",
abstract = "Field Effect sensor are widely used for detecting various target of analytes in chemical and biological solutions. The electrochemical sensor like Ion Sensitive Filed Effect Transistor (ISFETs) is the primitive structure for biosensor. This paper presents ISFET based on pH sensor modelled using COMSOL Multiphysiscs for artificial kidney. In this paper, pH characterizations of ISFET sensor with silicon nitride (Si3N4) as sensing membrane were discussed. The measurement were includes various pH value from 3 to 11. The pH sensitivity of ISFET by using Si3N4as sensing membrane give 44.4 mV/pH. Besides, this ISFET sensor is made to relate with microelectrode arrays with a tapered profile which the flow of red blood cell from the channel will flow into the electrode and ISFET biosensor then take place as ions determination.",
keywords = "artificial kidney, ISFET sensor, microelectrode arrays, pH characterization",
author = "Norzin, {Mas Syarafina} and Hamzah, {Azrul Azlan} and Yunus, {Farahdiana Wan} and Jumril Yunas and {Yeop Majlis}, Burhanuddin",
year = "2018",
month = "10",
day = "3",
doi = "10.1109/SMELEC.2018.8481303",
language = "English",
volume = "2018-August",
pages = "124--127",
booktitle = "2018 IEEE International Conference on Semiconductor Electronics, ICSE 2018 - Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
address = "United States",

}

TY - GEN

T1 - PH Sensing characteristics of silicon nitride as sensing membrane based ISFET sensor for artificial kidney

AU - Norzin, Mas Syarafina

AU - Hamzah, Azrul Azlan

AU - Yunus, Farahdiana Wan

AU - Yunas, Jumril

AU - Yeop Majlis, Burhanuddin

PY - 2018/10/3

Y1 - 2018/10/3

N2 - Field Effect sensor are widely used for detecting various target of analytes in chemical and biological solutions. The electrochemical sensor like Ion Sensitive Filed Effect Transistor (ISFETs) is the primitive structure for biosensor. This paper presents ISFET based on pH sensor modelled using COMSOL Multiphysiscs for artificial kidney. In this paper, pH characterizations of ISFET sensor with silicon nitride (Si3N4) as sensing membrane were discussed. The measurement were includes various pH value from 3 to 11. The pH sensitivity of ISFET by using Si3N4as sensing membrane give 44.4 mV/pH. Besides, this ISFET sensor is made to relate with microelectrode arrays with a tapered profile which the flow of red blood cell from the channel will flow into the electrode and ISFET biosensor then take place as ions determination.

AB - Field Effect sensor are widely used for detecting various target of analytes in chemical and biological solutions. The electrochemical sensor like Ion Sensitive Filed Effect Transistor (ISFETs) is the primitive structure for biosensor. This paper presents ISFET based on pH sensor modelled using COMSOL Multiphysiscs for artificial kidney. In this paper, pH characterizations of ISFET sensor with silicon nitride (Si3N4) as sensing membrane were discussed. The measurement were includes various pH value from 3 to 11. The pH sensitivity of ISFET by using Si3N4as sensing membrane give 44.4 mV/pH. Besides, this ISFET sensor is made to relate with microelectrode arrays with a tapered profile which the flow of red blood cell from the channel will flow into the electrode and ISFET biosensor then take place as ions determination.

KW - artificial kidney

KW - ISFET sensor

KW - microelectrode arrays

KW - pH characterization

UR - http://www.scopus.com/inward/record.url?scp=85056265614&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85056265614&partnerID=8YFLogxK

U2 - 10.1109/SMELEC.2018.8481303

DO - 10.1109/SMELEC.2018.8481303

M3 - Conference contribution

VL - 2018-August

SP - 124

EP - 127

BT - 2018 IEEE International Conference on Semiconductor Electronics, ICSE 2018 - Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

ER -