Optimizing rf power for preferential C≡N bond formation in a-CN x thin films prepared by rf-PECVD technique

N. F H Aziz, R. Ritikos, S. A A Kamal, Rozidawati Awang

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Effects of rf power on the chemical bonding in carbon nitride films deposited using radio-frequency (rf) plasma enhanced chemical vapor deposition in pure methane and nitrogen gas mixtures were investigated. The rf power was varied from 60 to 100 W. The deposition rate of the films increased constantly with increasing rf power up to 80W, before saturating with further increase in rf power. Fourier transform infra-red spectroscopy (FTIR) studies showed a systematic change in the spectra and revealed three main peaks namely the G-peak, D-peak and C≡N triple bond. This work showed that rf power has significant effects on the chemical bonding of the a-CNx films and the optimum rf power for the high C≡N absorption intensity is 80 W.

Original languageEnglish
Article number012009
JournalJournal of Physics: Conference Series
Volume431
Issue number1
DOIs
Publication statusPublished - 2013

Fingerprint

radio frequencies
thin films
carbon nitrides
gas mixtures
methane
infrared spectroscopy
vapor deposition
nitrogen

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Optimizing rf power for preferential C≡N bond formation in a-CN x thin films prepared by rf-PECVD technique. / Aziz, N. F H; Ritikos, R.; Kamal, S. A A; Awang, Rozidawati.

In: Journal of Physics: Conference Series, Vol. 431, No. 1, 012009, 2013.

Research output: Contribution to journalArticle

@article{8894ef5873b04505850d387998678659,
title = "Optimizing rf power for preferential C≡N bond formation in a-CN x thin films prepared by rf-PECVD technique",
abstract = "Effects of rf power on the chemical bonding in carbon nitride films deposited using radio-frequency (rf) plasma enhanced chemical vapor deposition in pure methane and nitrogen gas mixtures were investigated. The rf power was varied from 60 to 100 W. The deposition rate of the films increased constantly with increasing rf power up to 80W, before saturating with further increase in rf power. Fourier transform infra-red spectroscopy (FTIR) studies showed a systematic change in the spectra and revealed three main peaks namely the G-peak, D-peak and C≡N triple bond. This work showed that rf power has significant effects on the chemical bonding of the a-CNx films and the optimum rf power for the high C≡N absorption intensity is 80 W.",
author = "Aziz, {N. F H} and R. Ritikos and Kamal, {S. A A} and Rozidawati Awang",
year = "2013",
doi = "10.1088/1742-6596/431/1/012009",
language = "English",
volume = "431",
journal = "Journal of Physics: Conference Series",
issn = "1742-6588",
publisher = "IOP Publishing Ltd.",
number = "1",

}

TY - JOUR

T1 - Optimizing rf power for preferential C≡N bond formation in a-CN x thin films prepared by rf-PECVD technique

AU - Aziz, N. F H

AU - Ritikos, R.

AU - Kamal, S. A A

AU - Awang, Rozidawati

PY - 2013

Y1 - 2013

N2 - Effects of rf power on the chemical bonding in carbon nitride films deposited using radio-frequency (rf) plasma enhanced chemical vapor deposition in pure methane and nitrogen gas mixtures were investigated. The rf power was varied from 60 to 100 W. The deposition rate of the films increased constantly with increasing rf power up to 80W, before saturating with further increase in rf power. Fourier transform infra-red spectroscopy (FTIR) studies showed a systematic change in the spectra and revealed three main peaks namely the G-peak, D-peak and C≡N triple bond. This work showed that rf power has significant effects on the chemical bonding of the a-CNx films and the optimum rf power for the high C≡N absorption intensity is 80 W.

AB - Effects of rf power on the chemical bonding in carbon nitride films deposited using radio-frequency (rf) plasma enhanced chemical vapor deposition in pure methane and nitrogen gas mixtures were investigated. The rf power was varied from 60 to 100 W. The deposition rate of the films increased constantly with increasing rf power up to 80W, before saturating with further increase in rf power. Fourier transform infra-red spectroscopy (FTIR) studies showed a systematic change in the spectra and revealed three main peaks namely the G-peak, D-peak and C≡N triple bond. This work showed that rf power has significant effects on the chemical bonding of the a-CNx films and the optimum rf power for the high C≡N absorption intensity is 80 W.

UR - http://www.scopus.com/inward/record.url?scp=84876917270&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84876917270&partnerID=8YFLogxK

U2 - 10.1088/1742-6596/431/1/012009

DO - 10.1088/1742-6596/431/1/012009

M3 - Article

AN - SCOPUS:84876917270

VL - 431

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

SN - 1742-6588

IS - 1

M1 - 012009

ER -