Optimization of process parameter variability in 45 nm PMOS device using Taguchi method

F. Salehuddin, I. Ahmad, F. A. Hamid, Azami Zaharim

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

This study reports on an investigation of the effect and optimization of process parameter variability on poly sheet resistance (Rs) and leakage current (ILeak) in 45 nm PMOS device. The experimental studies were conducted under varying four process parameters, namely Halo implantation, Source/Drain Implantation, Oxide Growth Temperature and Silicide Anneal Temperature. Taguchi Method was used to determine the settings of process parameters. The level of importance of the process parameters on the poly sheet resistance and leakage current were determined by using Analysis of Variance (ANOVA). Virtual fabrication of the devices was performed by using ATHENA module. While the electrical characterization of the devices was implemented by using ATLAS module. The optimum process parameter combination was obtained by using the analysis of Signal-to-Noise (S/N) ratio. The confirmation tests indicated that it is possible to decrease the poly sheet resistance and leakage current significantly by using the Taguchi method. The results show that the Rs and ILeak after optimizations approaches are 67.53 Ω, sq-1 and 0.1850 m A μm-1, respectively. In this study, S/D implantation was identified as one of the process parameters that has the strongest effect on the response characteristics.

Original languageEnglish
Pages (from-to)1261-1266
Number of pages6
JournalJournal of Applied Sciences
Volume11
Issue number7
DOIs
Publication statusPublished - 2011

Fingerprint

Taguchi methods
Sheet resistance
Leakage currents
Growth temperature
Analysis of variance (ANOVA)
Signal to noise ratio
Fabrication
Oxides
Temperature

Keywords

  • 45 nm PMOS device
  • Optimization
  • Silvaco
  • Taguchi method
  • Variability

ASJC Scopus subject areas

  • General

Cite this

Optimization of process parameter variability in 45 nm PMOS device using Taguchi method. / Salehuddin, F.; Ahmad, I.; Hamid, F. A.; Zaharim, Azami.

In: Journal of Applied Sciences, Vol. 11, No. 7, 2011, p. 1261-1266.

Research output: Contribution to journalArticle

Salehuddin, F. ; Ahmad, I. ; Hamid, F. A. ; Zaharim, Azami. / Optimization of process parameter variability in 45 nm PMOS device using Taguchi method. In: Journal of Applied Sciences. 2011 ; Vol. 11, No. 7. pp. 1261-1266.
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