Optimization of input process parameters variation on threshold voltage in 45 nm NMOS device

F. Salehuddin, I. Ahmad, F. A. Hamid, Azami Zaharim, U. Hashim, P. R. Apte

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

In this study, Taguchi method was used to optimize the influence of process parameter variations on threshold voltage (VTH) in 45 nm n-channel metal oxide semiconductor (NMOS) device. The orthogonal array, the signal-to-noise ratio, and analysis of variance were employed to study the performance characteristics of a device. In this paper, eleven process parameters (control factors) were varied for 2 levels to perform 12 experiments. Whereas, the two noise factors were varied for 2 levels to get four readings of VTH for every row of experiment. VTH results were used as the evaluation variable. This work was done using technology computer-aided design (TCAD) simulator, consisting of a process simulator, ATHENA and device simulator, ATLAS. These two simulators were combined with Taguchi method to aid in design and optimize the process parameters. In this research, compensation implantation energy was identified as one of the process parameters that have the strongest effect on the response characteristics. While the halo implantation dosage was identified as an adjustment factor to get the nominal values of threshold voltage for NMOS device equal to 0.176 V.

Original languageEnglish
Pages (from-to)7026-7034
Number of pages9
JournalInternational Journal of Physical Sciences
Volume6
Issue number30
DOIs
Publication statusPublished - 23 Nov 2011

Fingerprint

MOS devices
semiconductor devices
Threshold voltage
metal oxide semiconductors
threshold voltage
simulators
Simulators
Taguchi methods
optimization
implantation
analysis of variance
computer aided design
Analysis of variance (ANOVA)
halos
Computer aided design
Signal to noise ratio
signal to noise ratios
adjusting
Experiments
dosage

Keywords

  • Analysis of variance
  • Control factor
  • Device simulation
  • Process simulation
  • Taguchi method

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Electronic, Optical and Magnetic Materials

Cite this

Optimization of input process parameters variation on threshold voltage in 45 nm NMOS device. / Salehuddin, F.; Ahmad, I.; Hamid, F. A.; Zaharim, Azami; Hashim, U.; Apte, P. R.

In: International Journal of Physical Sciences, Vol. 6, No. 30, 23.11.2011, p. 7026-7034.

Research output: Contribution to journalArticle

Salehuddin, F. ; Ahmad, I. ; Hamid, F. A. ; Zaharim, Azami ; Hashim, U. ; Apte, P. R. / Optimization of input process parameters variation on threshold voltage in 45 nm NMOS device. In: International Journal of Physical Sciences. 2011 ; Vol. 6, No. 30. pp. 7026-7034.
@article{9ac367de6b834b63bdc78e6dcaf055e6,
title = "Optimization of input process parameters variation on threshold voltage in 45 nm NMOS device",
abstract = "In this study, Taguchi method was used to optimize the influence of process parameter variations on threshold voltage (VTH) in 45 nm n-channel metal oxide semiconductor (NMOS) device. The orthogonal array, the signal-to-noise ratio, and analysis of variance were employed to study the performance characteristics of a device. In this paper, eleven process parameters (control factors) were varied for 2 levels to perform 12 experiments. Whereas, the two noise factors were varied for 2 levels to get four readings of VTH for every row of experiment. VTH results were used as the evaluation variable. This work was done using technology computer-aided design (TCAD) simulator, consisting of a process simulator, ATHENA and device simulator, ATLAS. These two simulators were combined with Taguchi method to aid in design and optimize the process parameters. In this research, compensation implantation energy was identified as one of the process parameters that have the strongest effect on the response characteristics. While the halo implantation dosage was identified as an adjustment factor to get the nominal values of threshold voltage for NMOS device equal to 0.176 V.",
keywords = "Analysis of variance, Control factor, Device simulation, Process simulation, Taguchi method",
author = "F. Salehuddin and I. Ahmad and Hamid, {F. A.} and Azami Zaharim and U. Hashim and Apte, {P. R.}",
year = "2011",
month = "11",
day = "23",
doi = "10.5897/IJPS11.401",
language = "English",
volume = "6",
pages = "7026--7034",
journal = "International Journal of Physical Sciences",
issn = "1992-1950",
publisher = "Academic Journals",
number = "30",

}

TY - JOUR

T1 - Optimization of input process parameters variation on threshold voltage in 45 nm NMOS device

AU - Salehuddin, F.

AU - Ahmad, I.

AU - Hamid, F. A.

AU - Zaharim, Azami

AU - Hashim, U.

AU - Apte, P. R.

PY - 2011/11/23

Y1 - 2011/11/23

N2 - In this study, Taguchi method was used to optimize the influence of process parameter variations on threshold voltage (VTH) in 45 nm n-channel metal oxide semiconductor (NMOS) device. The orthogonal array, the signal-to-noise ratio, and analysis of variance were employed to study the performance characteristics of a device. In this paper, eleven process parameters (control factors) were varied for 2 levels to perform 12 experiments. Whereas, the two noise factors were varied for 2 levels to get four readings of VTH for every row of experiment. VTH results were used as the evaluation variable. This work was done using technology computer-aided design (TCAD) simulator, consisting of a process simulator, ATHENA and device simulator, ATLAS. These two simulators were combined with Taguchi method to aid in design and optimize the process parameters. In this research, compensation implantation energy was identified as one of the process parameters that have the strongest effect on the response characteristics. While the halo implantation dosage was identified as an adjustment factor to get the nominal values of threshold voltage for NMOS device equal to 0.176 V.

AB - In this study, Taguchi method was used to optimize the influence of process parameter variations on threshold voltage (VTH) in 45 nm n-channel metal oxide semiconductor (NMOS) device. The orthogonal array, the signal-to-noise ratio, and analysis of variance were employed to study the performance characteristics of a device. In this paper, eleven process parameters (control factors) were varied for 2 levels to perform 12 experiments. Whereas, the two noise factors were varied for 2 levels to get four readings of VTH for every row of experiment. VTH results were used as the evaluation variable. This work was done using technology computer-aided design (TCAD) simulator, consisting of a process simulator, ATHENA and device simulator, ATLAS. These two simulators were combined with Taguchi method to aid in design and optimize the process parameters. In this research, compensation implantation energy was identified as one of the process parameters that have the strongest effect on the response characteristics. While the halo implantation dosage was identified as an adjustment factor to get the nominal values of threshold voltage for NMOS device equal to 0.176 V.

KW - Analysis of variance

KW - Control factor

KW - Device simulation

KW - Process simulation

KW - Taguchi method

UR - http://www.scopus.com/inward/record.url?scp=82755183478&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=82755183478&partnerID=8YFLogxK

U2 - 10.5897/IJPS11.401

DO - 10.5897/IJPS11.401

M3 - Article

VL - 6

SP - 7026

EP - 7034

JO - International Journal of Physical Sciences

JF - International Journal of Physical Sciences

SN - 1992-1950

IS - 30

ER -