Optimization of electro-optical characteristics of GaAs-based oxide confinement VCSEL

M. S. Alias, S. Shaari, S. M. Mitani

    Research output: Contribution to journalArticle

    14 Citations (Scopus)

    Abstract

    An experimental study has been presented of the oxide-confined vertical-cavity surface-emitting lasers (VCSEL) operating in the 850 nm region of the electromagnetic spectrum. In this regard, various relevant VCSEL samples with numerous oxide aperture sizes have been fabricated and characterized. Thorough investigations of the electrical as well as optical characteristics of the fabricated samples have been performed which includes the overall device performance as a function of the oxidize aperture sizes. It is reported that the VCSEL with oxide aperture size <10 μm require low threshold currents (<1 mA). Further, the differential quantum efficiencies up to 28% were measured for a number of these devices. It is found that devices employing oxide aperture of 10 to 15 μm shows promising electro-optical characteristics for 850 nm oxide VCSEL optimization.

    Original languageEnglish
    Pages (from-to)806-810
    Number of pages5
    JournalLaser Physics
    Volume20
    Issue number4
    DOIs
    Publication statusPublished - Apr 2010

    Fingerprint

    Surface emitting lasers
    surface emitting lasers
    cavities
    apertures
    optimization
    Oxides
    oxides
    electromagnetic spectra
    Quantum efficiency
    threshold currents
    quantum efficiency

    ASJC Scopus subject areas

    • Condensed Matter Physics
    • Atomic and Molecular Physics, and Optics
    • Instrumentation
    • Industrial and Manufacturing Engineering

    Cite this

    Optimization of electro-optical characteristics of GaAs-based oxide confinement VCSEL. / Alias, M. S.; Shaari, S.; Mitani, S. M.

    In: Laser Physics, Vol. 20, No. 4, 04.2010, p. 806-810.

    Research output: Contribution to journalArticle

    Alias, M. S. ; Shaari, S. ; Mitani, S. M. / Optimization of electro-optical characteristics of GaAs-based oxide confinement VCSEL. In: Laser Physics. 2010 ; Vol. 20, No. 4. pp. 806-810.
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