Optimisation on junction formation by three-stack furnace POCl 3 diffusion and analysis on solar cell performance

S. L. Cheow, A. G N Salwa, M. Y. Khairy, A. W. Shahrul, Nowshad Amin, Kamaruzzaman Sopian, Saleem H. Zaidi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

The emitter formation parameters for high-efficiency and low cost crystalline silicon solar cells on p-type Si (100) with resistivity in 10-20 ohm range have been investigated. All experimental works performed in 8-inch diameter quartz process tube using liquid source POCl 3 as the doping source. Process temperatures in the range 850-1000 C with drive-in time in 15-30 minutes at O 2 flow rate of 4800 seem were investigated. The starting material wafers were 〈100〉 oriented, 100-mm diameter, Cz mono-crystalline silicon wafers with 350-μm thickness, 0-10 Ohm-cm of resistivity. This process produces an emitter with a sheet resistance in the range from 20 Ω/sq to 100 Ω/sq as measured with a four point probe (FPP). In order to reduce surface defects, we have also investigated thermal oxidation of heavily-doped wafers to ensure better surface passivation.

Original languageEnglish
Title of host publicationECS Transactions
Pages1053-1059
Number of pages7
Volume27
Edition1
DOIs
Publication statusPublished - 2010
EventChina Semiconductor Technology International Conference 2010, CSTIC 2010 - Shanghai
Duration: 18 Mar 201019 Mar 2010

Other

OtherChina Semiconductor Technology International Conference 2010, CSTIC 2010
CityShanghai
Period18/3/1019/3/10

Fingerprint

Solar cells
Furnaces
Crystalline materials
Sheet resistance
Silicon solar cells
Surface defects
Silicon wafers
Passivation
Quartz
Doping (additives)
Flow rate
Oxidation
Liquids
Costs
Temperature
Hot Temperature

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Cheow, S. L., Salwa, A. G. N., Khairy, M. Y., Shahrul, A. W., Amin, N., Sopian, K., & Zaidi, S. H. (2010). Optimisation on junction formation by three-stack furnace POCl 3 diffusion and analysis on solar cell performance. In ECS Transactions (1 ed., Vol. 27, pp. 1053-1059) https://doi.org/10.1149/1.3360750

Optimisation on junction formation by three-stack furnace POCl 3 diffusion and analysis on solar cell performance. / Cheow, S. L.; Salwa, A. G N; Khairy, M. Y.; Shahrul, A. W.; Amin, Nowshad; Sopian, Kamaruzzaman; Zaidi, Saleem H.

ECS Transactions. Vol. 27 1. ed. 2010. p. 1053-1059.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Cheow, SL, Salwa, AGN, Khairy, MY, Shahrul, AW, Amin, N, Sopian, K & Zaidi, SH 2010, Optimisation on junction formation by three-stack furnace POCl 3 diffusion and analysis on solar cell performance. in ECS Transactions. 1 edn, vol. 27, pp. 1053-1059, China Semiconductor Technology International Conference 2010, CSTIC 2010, Shanghai, 18/3/10. https://doi.org/10.1149/1.3360750
Cheow SL, Salwa AGN, Khairy MY, Shahrul AW, Amin N, Sopian K et al. Optimisation on junction formation by three-stack furnace POCl 3 diffusion and analysis on solar cell performance. In ECS Transactions. 1 ed. Vol. 27. 2010. p. 1053-1059 https://doi.org/10.1149/1.3360750
Cheow, S. L. ; Salwa, A. G N ; Khairy, M. Y. ; Shahrul, A. W. ; Amin, Nowshad ; Sopian, Kamaruzzaman ; Zaidi, Saleem H. / Optimisation on junction formation by three-stack furnace POCl 3 diffusion and analysis on solar cell performance. ECS Transactions. Vol. 27 1. ed. 2010. pp. 1053-1059
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