Optimisation of N-channel trench power MOSFET using 2 k factorial design method

Syakimah Ismail Nur, Ahmad Ibrahim, Hafizah Husain

Research output: Contribution to journalArticle

Abstract

The main objective of this research is to optimize the trench depth, trench width, epitaxial resistivity and epitaxial thickness in trench power MOSFET so as to obtain high breakdown voltage but low on-resistance. Optimisation of these parameters are based on 2 k factorial design method for achieving specific on-resistance 0.1 mΩcm 2 and blocking voltage higher than 30 V. ATHENA and ATLAS software from Silvaco Int. were used for fabrication simulation and device electrical characterisation. The results obtained were, the optimisation value for trench width was 1.25μm, trench depth was 1.25 μm, epitaxial thickness was 4.75 μm and epitaxial resistivity was 032 Ωcm. The predictive value of breakdown voltage was 39.41 V and significant to factors trench depth, epitaxial thickness and epitaxial resistivity. The predictive value for on-resistance was 0.105 mΩcm 2 with significant to factors trench depth, epitaxial thickness and epitaxial resistivity. In conclusion, 2 k factorial design method is successfully utilised in optimizing n-channel trench power MOSFET.

Original languageEnglish
Pages (from-to)693-698
Number of pages6
JournalSains Malaysiana
Volume38
Issue number5
Publication statusPublished - Oct 2009

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Electric breakdown
Fabrication
Electric potential
Power MOSFET

Keywords

  • 2 factorial design method
  • Optimisation
  • Trench power mosfet

ASJC Scopus subject areas

  • General

Cite this

Optimisation of N-channel trench power MOSFET using 2 k factorial design method. / Nur, Syakimah Ismail; Ibrahim, Ahmad; Husain, Hafizah.

In: Sains Malaysiana, Vol. 38, No. 5, 10.2009, p. 693-698.

Research output: Contribution to journalArticle

Nur, Syakimah Ismail ; Ibrahim, Ahmad ; Husain, Hafizah. / Optimisation of N-channel trench power MOSFET using 2 k factorial design method. In: Sains Malaysiana. 2009 ; Vol. 38, No. 5. pp. 693-698.
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