Optical properties of zinc oxide films growth on Si substrate via aqueous chemical growth

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This paper presents a methodology to synthesized zinc oxide (ZnO) films by an aqueous chemical growth based technique. Structural, morphology and optical properties of ZnO films were characterized using X-ray diffractometry (XRD), field emission scanning electron microscopy (FESEM) and UV-Visible spectroscopy. This paper aims to study the effect of growth time on the structural, morphology and optical properties of ZnO films. XRD patterns showed a well-defined (101) peak that indicates the crystalline hexagonal ZnO structure. FESEM results revealed hexagonal rods structures growth on Si substrate from 1.5 h to 3 h growth time. The optical band gap for ZnO film has increased from 3.80 eV to 3.90 eV with the increasing of growth time. This result shows that the growth time have influences on the structural, morphology and optical properties of ZnO films.

Original languageEnglish
Title of host publication2012 10th IEEE International Conference on Semiconductor Electronics, ICSE 2012 - Proceedings
Pages242-245
Number of pages4
DOIs
Publication statusPublished - 2012
Event2012 10th IEEE International Conference on Semiconductor Electronics, ICSE 2012 - Kuala Lumpur
Duration: 19 Sep 201221 Sep 2012

Other

Other2012 10th IEEE International Conference on Semiconductor Electronics, ICSE 2012
CityKuala Lumpur
Period19/9/1221/9/12

Fingerprint

Film growth
Zinc oxide
Oxide films
Optical properties
Substrates
Field emission
X ray diffraction analysis
Scanning electron microscopy
Optical band gaps
Spectroscopy
Crystalline materials

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

Cite this

Bakar, M. A., Abdul Hamid, M. A., Jalar @ Jalil, A., & Shamsudin, R. (2012). Optical properties of zinc oxide films growth on Si substrate via aqueous chemical growth. In 2012 10th IEEE International Conference on Semiconductor Electronics, ICSE 2012 - Proceedings (pp. 242-245). [6417132] https://doi.org/10.1109/SMElec.2012.6417132

Optical properties of zinc oxide films growth on Si substrate via aqueous chemical growth. / Bakar, Maria Abu; Abdul Hamid, Muhammad Azmi; Jalar @ Jalil, Azman; Shamsudin, Roslinda.

2012 10th IEEE International Conference on Semiconductor Electronics, ICSE 2012 - Proceedings. 2012. p. 242-245 6417132.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Bakar, MA, Abdul Hamid, MA, Jalar @ Jalil, A & Shamsudin, R 2012, Optical properties of zinc oxide films growth on Si substrate via aqueous chemical growth. in 2012 10th IEEE International Conference on Semiconductor Electronics, ICSE 2012 - Proceedings., 6417132, pp. 242-245, 2012 10th IEEE International Conference on Semiconductor Electronics, ICSE 2012, Kuala Lumpur, 19/9/12. https://doi.org/10.1109/SMElec.2012.6417132
Bakar MA, Abdul Hamid MA, Jalar @ Jalil A, Shamsudin R. Optical properties of zinc oxide films growth on Si substrate via aqueous chemical growth. In 2012 10th IEEE International Conference on Semiconductor Electronics, ICSE 2012 - Proceedings. 2012. p. 242-245. 6417132 https://doi.org/10.1109/SMElec.2012.6417132
Bakar, Maria Abu ; Abdul Hamid, Muhammad Azmi ; Jalar @ Jalil, Azman ; Shamsudin, Roslinda. / Optical properties of zinc oxide films growth on Si substrate via aqueous chemical growth. 2012 10th IEEE International Conference on Semiconductor Electronics, ICSE 2012 - Proceedings. 2012. pp. 242-245
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