Optical crosstalk in interdigitated lateral PIN photodiodes

P. Susthitha Menon N V Visvanathan, Badariah Bais, J. H I Aimi Azri Mohd, S. Shaari

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

This paper presents an investigation of the optical crosstalk in lateral interdigitated PIN photodiodes (ILPP) with top illumination. Three different substrates were used; silicon, germanium and indium gallium arsenide. Device parameters that were evaluated were the doping concentration in the p+ and n+ wells, the absorption layer thickness and the distance between the electrodes on each one of these substrates. From the evaluation of 27 types of ILPP, it was discovered that the absorption layer thickness of 1 μm on an InGaAs substrate has the lowest crosstalk value of -143.65 dB. Usage of numerical evaluation prior to actual device fabrication reduces device fabrication cost and time as well as provides an insight into the physics of the device which may not be executable in the actual fabricated device.

Original languageEnglish
Pages (from-to)535-538
Number of pages4
JournalOptoelectronics and Advanced Materials, Rapid Communications
Volume6
Issue number5-6
Publication statusPublished - May 2012

Fingerprint

Crosstalk
Photodiodes
Substrates
Germanium
Fabrication
Indium
Gallium arsenide
Silicon
Physics
Lighting
Doping (additives)
Electrodes
Costs

Keywords

  • Crosstalk
  • Interdigitated
  • Lateral
  • Numerical modeling
  • p-i-n
  • Photodiode

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Optical crosstalk in interdigitated lateral PIN photodiodes. / N V Visvanathan, P. Susthitha Menon; Bais, Badariah; Aimi Azri Mohd, J. H I; Shaari, S.

In: Optoelectronics and Advanced Materials, Rapid Communications, Vol. 6, No. 5-6, 05.2012, p. 535-538.

Research output: Contribution to journalArticle

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