Optical characterization of SixGe1-x films grown on nanostructured Si substrates

Ayu Wazira Azhari, Adnan Ali, Kamaruzzaman Sopian, Uda Hashim, Saleem H. Zaidi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

High quality Ge and SixGe1-x films grown on Si substrates are attractive for a wide range of applications in optics, optoelectronics, and high efficiency solar cells. In this study, heteroepitaxial growth of Ge on nanostructured Si surfaces has been investigated. Thermally evaporated amorphous Ge films are vacuum-deposited and crystallized by thermal annealing at 1000 °C. Scanning electron microscope (SEM), spectroscopy (RS), infrared (IR) transmission, and Raman methods are used to characterize amorphous and crystalline Ge films. SEM analysis reveals presence of dominant features including cracks, microscopic roughness, and islands. RS exhibits strong multiple peaks attributed to crystalline structures related to Si-Ge at ∼ 444 cm-1 and Ge at 300 cm-1; narrow and stronger peaks are observed in thermally annealed films. A comparison of IR transmission measurements in 900-1700-nm spectral range shows that amorphous film absorption is significantly higher than that of crystalline films consistent with respective bandgaps. A more detailed analysis including EDX and XRD measurements will be presented at the conference.

Original languageEnglish
Title of host publication2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages198-201
Number of pages4
ISBN (Print)9781479943982
DOIs
Publication statusPublished - 15 Oct 2014
Event40th IEEE Photovoltaic Specialist Conference, PVSC 2014 - Denver
Duration: 8 Jun 201413 Jun 2014

Other

Other40th IEEE Photovoltaic Specialist Conference, PVSC 2014
CityDenver
Period8/6/1413/6/14

Fingerprint

Substrates
Infrared transmission
Crystalline materials
Electron microscopes
Scanning
Amorphous films
Epitaxial growth
Optoelectronic devices
Energy dispersive spectroscopy
Optics
Solar cells
Energy gap
Surface roughness
Spectroscopy
Vacuum
Annealing
Cracks
Hot Temperature

Keywords

  • Ge and SiGe heteroepitaxial growth
  • IR transmission
  • nanostructured Si
  • Raman spectroscopy
  • solar cells

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Azhari, A. W., Ali, A., Sopian, K., Hashim, U., & Zaidi, S. H. (2014). Optical characterization of SixGe1-x films grown on nanostructured Si substrates. In 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014 (pp. 198-201). [6925565] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2014.6925565

Optical characterization of SixGe1-x films grown on nanostructured Si substrates. / Azhari, Ayu Wazira; Ali, Adnan; Sopian, Kamaruzzaman; Hashim, Uda; Zaidi, Saleem H.

2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014. Institute of Electrical and Electronics Engineers Inc., 2014. p. 198-201 6925565.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Azhari, AW, Ali, A, Sopian, K, Hashim, U & Zaidi, SH 2014, Optical characterization of SixGe1-x films grown on nanostructured Si substrates. in 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014., 6925565, Institute of Electrical and Electronics Engineers Inc., pp. 198-201, 40th IEEE Photovoltaic Specialist Conference, PVSC 2014, Denver, 8/6/14. https://doi.org/10.1109/PVSC.2014.6925565
Azhari AW, Ali A, Sopian K, Hashim U, Zaidi SH. Optical characterization of SixGe1-x films grown on nanostructured Si substrates. In 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014. Institute of Electrical and Electronics Engineers Inc. 2014. p. 198-201. 6925565 https://doi.org/10.1109/PVSC.2014.6925565
Azhari, Ayu Wazira ; Ali, Adnan ; Sopian, Kamaruzzaman ; Hashim, Uda ; Zaidi, Saleem H. / Optical characterization of SixGe1-x films grown on nanostructured Si substrates. 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014. Institute of Electrical and Electronics Engineers Inc., 2014. pp. 198-201
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