Optical and electrical properties of nanostructured metal-silicon-metal photodetectors

A. K. Sharma, Saleem H. Zaidi, P. C. Logofãtu, S. R J Brueck

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

We report an experimental evaluation of the performance of silicon (Si) photodetectors incorporating one-dimensional (1-D) arrays of rectangular and triangular-shaped nanoscale structures within their active regions. A significant (∼ 2 × ) enhancement in photoresponse is achieved in these devices across the 400- to 900-nm spectral region due to the modification of optical absorption properties that results from structuring the Si surface on physical optics scales smaller than the wavelength, which both reduces the reflectivity and concentrates the optical field closer to the surface. Both patterned (triangular and rectangular lineshape) and planar Ni-Si back-to-back Schottky barrier metal-semiconductor-metal photodetectors on n-type (∼ 5 × 1014 cm-3) bulk Si were studied. 1-D ∼50-250-nm linewidth, ∼ 1000-nm depth, grating structures were fabricated by a combination of interferometric lithography and dry etching. The nanoscale grating structures significantly modify the absorption, reflectance, and transmission characteristics of the semiconductor: air interface. These changes result in improved electrical response leading to increased external quantum efficiency (from ∼ 44% for planar to ∼ 81% for structured devices at λ =700 nm). In addition, a faster time constant (∼ 1700 ps for planar to ∼ 600 ps for structured at λ =900 nm) is achieved by increasing the absorption near the surface where the carriers can be rapidly collected. Experimental quantum efficiency and photocurrents results are compared with a theoretical photocurrent model based on rigorous coupled-wave analysis of nanostructured gratings.

Original languageEnglish
Pages (from-to)1651-1660
Number of pages10
JournalIEEE Journal of Quantum Electronics
Volume38
Issue number12
DOIs
Publication statusPublished - Dec 2002
Externally publishedYes

Fingerprint

Photodetectors
photometers
Electric properties
Optical properties
electrical properties
optical properties
Silicon
gratings
silicon
Metals
Photocurrents
Quantum efficiency
metals
photocurrents
quantum efficiency
Semiconductor materials
reflectance
Physical optics
physical optics
Dry etching

Keywords

  • Interferometric lithography
  • Metal-semiconductor-metal (MSM)
  • Nanostructures
  • Photodetectors
  • Rigourous coupled-wave analysis (RCWA)
  • Silicon

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)

Cite this

Optical and electrical properties of nanostructured metal-silicon-metal photodetectors. / Sharma, A. K.; Zaidi, Saleem H.; Logofãtu, P. C.; Brueck, S. R J.

In: IEEE Journal of Quantum Electronics, Vol. 38, No. 12, 12.2002, p. 1651-1660.

Research output: Contribution to journalArticle

Sharma, A. K. ; Zaidi, Saleem H. ; Logofãtu, P. C. ; Brueck, S. R J. / Optical and electrical properties of nanostructured metal-silicon-metal photodetectors. In: IEEE Journal of Quantum Electronics. 2002 ; Vol. 38, No. 12. pp. 1651-1660.
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