Optical and electrical properties of Cu-based thin films by aerosol assisted chemical vapor deposition

Research output: Contribution to journalArticle

Abstract

Cu-based thin films with doping of Zn and Al were synthesized by aerosol-assisted chemical vapor deposition (AACVD). The AACVD allows simple fabrication method which produced homogenous film when deposited on glass substrates. The structural, optical transmittance and electrical properties of Cu-based thin film with Zn and Al doping were obtained by X-ray diffraction (XRD), UV-Vis spectroscopy and 4-point probe, respectively. XRD results showed peaks for ZnO and CuAlO 2 indicating that binary Cu thin film with Zn and Al doping was successfully synthesized by AACVD. The optical band gap of 3.6 and 4.11 eV was obtained for single Cu 2 O and ZnO thin film, respectively. The best electrical performance was achieved by single Cu 2 O thin film with R s = 102.8 ω/sq, however, it was obtained at low T of 28%. The doping of Zn and Al to Cu-based thin film did not improve their electrical and optical properties.

Original languageEnglish
Pages (from-to)218-224
Number of pages7
JournalASM Science Journal
Volume11
Issue numberSpecial Issue 2
Publication statusPublished - 1 Jan 2018

Fingerprint

aerosols
electrical properties
vapor deposition
optical properties
thin films
diffraction
transmittance
x rays
fabrication
probes
glass
spectroscopy

Keywords

  • AACVD
  • Copper oxide thin films
  • CuAlO
  • Transparent conducting film

ASJC Scopus subject areas

  • General

Cite this

@article{5a590d623ea54b45b6f8e4379cf8efe6,
title = "Optical and electrical properties of Cu-based thin films by aerosol assisted chemical vapor deposition",
abstract = "Cu-based thin films with doping of Zn and Al were synthesized by aerosol-assisted chemical vapor deposition (AACVD). The AACVD allows simple fabrication method which produced homogenous film when deposited on glass substrates. The structural, optical transmittance and electrical properties of Cu-based thin film with Zn and Al doping were obtained by X-ray diffraction (XRD), UV-Vis spectroscopy and 4-point probe, respectively. XRD results showed peaks for ZnO and CuAlO 2 indicating that binary Cu thin film with Zn and Al doping was successfully synthesized by AACVD. The optical band gap of 3.6 and 4.11 eV was obtained for single Cu 2 O and ZnO thin film, respectively. The best electrical performance was achieved by single Cu 2 O thin film with R s = 102.8 ω/sq, however, it was obtained at low T of 28{\%}. The doping of Zn and Al to Cu-based thin film did not improve their electrical and optical properties.",
keywords = "AACVD, Copper oxide thin films, CuAlO, Transparent conducting film",
author = "Rosli, {N. N.} and Ibrahim, {Mohd. Adib} and {Mat Teridi}, {Mohd Asri} and {Ahmad Ludin}, Norasikin and Kamaruzzaman Sopian",
year = "2018",
month = "1",
day = "1",
language = "English",
volume = "11",
pages = "218--224",
journal = "ASM Science Journal",
issn = "1823-6782",
publisher = "Akademi Sains Malaysia",
number = "Special Issue 2",

}

TY - JOUR

T1 - Optical and electrical properties of Cu-based thin films by aerosol assisted chemical vapor deposition

AU - Rosli, N. N.

AU - Ibrahim, Mohd. Adib

AU - Mat Teridi, Mohd Asri

AU - Ahmad Ludin, Norasikin

AU - Sopian, Kamaruzzaman

PY - 2018/1/1

Y1 - 2018/1/1

N2 - Cu-based thin films with doping of Zn and Al were synthesized by aerosol-assisted chemical vapor deposition (AACVD). The AACVD allows simple fabrication method which produced homogenous film when deposited on glass substrates. The structural, optical transmittance and electrical properties of Cu-based thin film with Zn and Al doping were obtained by X-ray diffraction (XRD), UV-Vis spectroscopy and 4-point probe, respectively. XRD results showed peaks for ZnO and CuAlO 2 indicating that binary Cu thin film with Zn and Al doping was successfully synthesized by AACVD. The optical band gap of 3.6 and 4.11 eV was obtained for single Cu 2 O and ZnO thin film, respectively. The best electrical performance was achieved by single Cu 2 O thin film with R s = 102.8 ω/sq, however, it was obtained at low T of 28%. The doping of Zn and Al to Cu-based thin film did not improve their electrical and optical properties.

AB - Cu-based thin films with doping of Zn and Al were synthesized by aerosol-assisted chemical vapor deposition (AACVD). The AACVD allows simple fabrication method which produced homogenous film when deposited on glass substrates. The structural, optical transmittance and electrical properties of Cu-based thin film with Zn and Al doping were obtained by X-ray diffraction (XRD), UV-Vis spectroscopy and 4-point probe, respectively. XRD results showed peaks for ZnO and CuAlO 2 indicating that binary Cu thin film with Zn and Al doping was successfully synthesized by AACVD. The optical band gap of 3.6 and 4.11 eV was obtained for single Cu 2 O and ZnO thin film, respectively. The best electrical performance was achieved by single Cu 2 O thin film with R s = 102.8 ω/sq, however, it was obtained at low T of 28%. The doping of Zn and Al to Cu-based thin film did not improve their electrical and optical properties.

KW - AACVD

KW - Copper oxide thin films

KW - CuAlO

KW - Transparent conducting film

UR - http://www.scopus.com/inward/record.url?scp=85062464506&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85062464506&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:85062464506

VL - 11

SP - 218

EP - 224

JO - ASM Science Journal

JF - ASM Science Journal

SN - 1823-6782

IS - Special Issue 2

ER -