Operation mode of phase modulation based on carrier dispersion effect in p-i-n diode of silicon rib waveguide

B. Mardiana, H. Hazura, A. R. Hanim, P. Susthitha Menon N V Visvanathan, Huda Abdullah

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

This paper highlights the study of the carrier injection mode and the carrier depletion mode of the phase modulator. The phase modulator device has been integrated in the silicon rib waveguide by using the p-i-n diode structure. The electrical device performance is predicted by using the 2-D semiconductor package SILVACO (CAD) software under DC operation. Summarily, the phase modulator device has less sensitivity to the effective refractive index changes when operating in reverse biased or depletion mode compared to the forward biased or injection mode.

Original languageEnglish
Title of host publicationIEEE International Conference on Semiconductor Electronics, Proceedings, ICSE
Pages355-357
Number of pages3
DOIs
Publication statusPublished - 2010
Event2010 IEEE International Conference on Semiconductor Electronics, ICSE 2010 - Melaka
Duration: 28 Jun 201030 Jun 2010

Other

Other2010 IEEE International Conference on Semiconductor Electronics, ICSE 2010
CityMelaka
Period28/6/1030/6/10

Fingerprint

Phase modulation
Silicon
Modulators
Diodes
Waveguides
Refractive index
Computer aided design
Semiconductor materials

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Mardiana, B., Hazura, H., Hanim, A. R., N V Visvanathan, P. S. M., & Abdullah, H. (2010). Operation mode of phase modulation based on carrier dispersion effect in p-i-n diode of silicon rib waveguide. In IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE (pp. 355-357). [5549510] https://doi.org/10.1109/SMELEC.2010.5549510

Operation mode of phase modulation based on carrier dispersion effect in p-i-n diode of silicon rib waveguide. / Mardiana, B.; Hazura, H.; Hanim, A. R.; N V Visvanathan, P. Susthitha Menon; Abdullah, Huda.

IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. 2010. p. 355-357 5549510.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Mardiana, B, Hazura, H, Hanim, AR, N V Visvanathan, PSM & Abdullah, H 2010, Operation mode of phase modulation based on carrier dispersion effect in p-i-n diode of silicon rib waveguide. in IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE., 5549510, pp. 355-357, 2010 IEEE International Conference on Semiconductor Electronics, ICSE 2010, Melaka, 28/6/10. https://doi.org/10.1109/SMELEC.2010.5549510
Mardiana B, Hazura H, Hanim AR, N V Visvanathan PSM, Abdullah H. Operation mode of phase modulation based on carrier dispersion effect in p-i-n diode of silicon rib waveguide. In IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. 2010. p. 355-357. 5549510 https://doi.org/10.1109/SMELEC.2010.5549510
Mardiana, B. ; Hazura, H. ; Hanim, A. R. ; N V Visvanathan, P. Susthitha Menon ; Abdullah, Huda. / Operation mode of phase modulation based on carrier dispersion effect in p-i-n diode of silicon rib waveguide. IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. 2010. pp. 355-357
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