On the nano-hillock formation induced by slow highly charged ions on insulator surfaces

C. Lemell, A. S. El-Said, W. Meissl, I. C. Gebeshuber, C. Trautmann, M. Toulemonde, J. Burgdörfer, F. Aumayr

Research output: Contribution to journalArticle

39 Citations (Scopus)

Abstract

We discuss the creation of nano-sized protrusions on insulating surfaces using slow highly charged ions. This method holds the promise of forming regular structures on surfaces without inducing defects in deeper lying crystal layers. We find that only projectiles with a potential energy above a critical value are able to create hillocks. Below this threshold no surface modification is observed. This is similar to the track and hillock formation induced by swift (∼GeV) heavy ions. We present a model for the conversion of potential energy stored in the projectiles into target-lattice excitations (heat) and discuss the possibility to create ordered structures using the guiding effect observed in insulating conical structures.

Original languageEnglish
Pages (from-to)1398-1404
Number of pages7
JournalSolid-State Electronics
Volume51
Issue number10 SPEC. ISS
DOIs
Publication statusPublished - Oct 2007
Externally publishedYes

Fingerprint

Projectiles
Potential energy
insulators
Ions
Heavy Ions
projectiles
potential energy
Heavy ions
Surface treatment
ions
Defects
Crystals
heavy ions
heat
thresholds
defects
excitation
crystals
Hot Temperature

Keywords

  • Hillock formation
  • Ion-insulator interactions
  • Nanostructuring

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Lemell, C., El-Said, A. S., Meissl, W., Gebeshuber, I. C., Trautmann, C., Toulemonde, M., ... Aumayr, F. (2007). On the nano-hillock formation induced by slow highly charged ions on insulator surfaces. Solid-State Electronics, 51(10 SPEC. ISS), 1398-1404. https://doi.org/10.1016/j.sse.2007.06.016

On the nano-hillock formation induced by slow highly charged ions on insulator surfaces. / Lemell, C.; El-Said, A. S.; Meissl, W.; Gebeshuber, I. C.; Trautmann, C.; Toulemonde, M.; Burgdörfer, J.; Aumayr, F.

In: Solid-State Electronics, Vol. 51, No. 10 SPEC. ISS, 10.2007, p. 1398-1404.

Research output: Contribution to journalArticle

Lemell, C, El-Said, AS, Meissl, W, Gebeshuber, IC, Trautmann, C, Toulemonde, M, Burgdörfer, J & Aumayr, F 2007, 'On the nano-hillock formation induced by slow highly charged ions on insulator surfaces', Solid-State Electronics, vol. 51, no. 10 SPEC. ISS, pp. 1398-1404. https://doi.org/10.1016/j.sse.2007.06.016
Lemell C, El-Said AS, Meissl W, Gebeshuber IC, Trautmann C, Toulemonde M et al. On the nano-hillock formation induced by slow highly charged ions on insulator surfaces. Solid-State Electronics. 2007 Oct;51(10 SPEC. ISS):1398-1404. https://doi.org/10.1016/j.sse.2007.06.016
Lemell, C. ; El-Said, A. S. ; Meissl, W. ; Gebeshuber, I. C. ; Trautmann, C. ; Toulemonde, M. ; Burgdörfer, J. ; Aumayr, F. / On the nano-hillock formation induced by slow highly charged ions on insulator surfaces. In: Solid-State Electronics. 2007 ; Vol. 51, No. 10 SPEC. ISS. pp. 1398-1404.
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