Ohmic contact in P-HEMT wafer using metallization with Ge/Au/Ni/Au

Asban Dolah, Muhammad Azmi Abdul Hamid, Mohamad Deraman, Ashaari Yusof, Nor Azhadi Ngah, Norman Fadhil Idham Muhammad

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this study, Ohmic and Schottky contacts were fabricated on GaAs/AlGaAs/InGaAs HEMTs structure. A good metal-semiconductor interface are essential for achieving lower specific contact resistance and good rectifying properties. An GaAs/AlGaAs/InGaAs epi wafer was supply by the vendor. GaAs/AlGaAs/InGaAs substrate was cleaned using wet chemical etching technique. Electrodes were fabricated through a sequenced of lithography, cleaning, sputtering and lift off processes. The electrodes were prepared with metal layers of Ge, Au, Pt, Ti and Ni. Parameters such as metal thickness, annealing temperatures (from 300°C to 400°C) and annealing time were varied during fabrication process. Electrical characterizations after annealing were carried out using transmission line method (TLM) to obtain the specific contact resistance. Annealing temperature between 340°C to 360°C produced contact resistance below 5 x 10-3 Ω-cm2.

Original languageEnglish
Title of host publicationAdvanced Materials Research
PublisherTrans Tech Publications
Pages351-353
Number of pages3
Volume896
ISBN (Print)9783038350316
DOIs
Publication statusPublished - 2014
Event2013 International Conference on Advanced Materials Science and Technology, ICAMST 2013 - Yogyakarta
Duration: 17 Sep 201318 Sep 2013

Publication series

NameAdvanced Materials Research
Volume896
ISSN (Print)10226680

Other

Other2013 International Conference on Advanced Materials Science and Technology, ICAMST 2013
CityYogyakarta
Period17/9/1318/9/13

Fingerprint

Ohmic contacts
High electron mobility transistors
Metallizing
Contact resistance
Annealing
Metals
Electrodes
Wet etching
Lithography
Sputtering
Cleaning
Electric lines
Semiconductor materials
Fabrication
Temperature
Substrates

Keywords

  • Ohmic contact
  • Transmission line measurement

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Dolah, A., Abdul Hamid, M. A., Deraman, M., Yusof, A., Ngah, N. A., & Muhammad, N. F. I. (2014). Ohmic contact in P-HEMT wafer using metallization with Ge/Au/Ni/Au. In Advanced Materials Research (Vol. 896, pp. 351-353). (Advanced Materials Research; Vol. 896). Trans Tech Publications. https://doi.org/10.4028/www.scientific.net/AMR.896.351

Ohmic contact in P-HEMT wafer using metallization with Ge/Au/Ni/Au. / Dolah, Asban; Abdul Hamid, Muhammad Azmi; Deraman, Mohamad; Yusof, Ashaari; Ngah, Nor Azhadi; Muhammad, Norman Fadhil Idham.

Advanced Materials Research. Vol. 896 Trans Tech Publications, 2014. p. 351-353 (Advanced Materials Research; Vol. 896).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Dolah, A, Abdul Hamid, MA, Deraman, M, Yusof, A, Ngah, NA & Muhammad, NFI 2014, Ohmic contact in P-HEMT wafer using metallization with Ge/Au/Ni/Au. in Advanced Materials Research. vol. 896, Advanced Materials Research, vol. 896, Trans Tech Publications, pp. 351-353, 2013 International Conference on Advanced Materials Science and Technology, ICAMST 2013, Yogyakarta, 17/9/13. https://doi.org/10.4028/www.scientific.net/AMR.896.351
Dolah A, Abdul Hamid MA, Deraman M, Yusof A, Ngah NA, Muhammad NFI. Ohmic contact in P-HEMT wafer using metallization with Ge/Au/Ni/Au. In Advanced Materials Research. Vol. 896. Trans Tech Publications. 2014. p. 351-353. (Advanced Materials Research). https://doi.org/10.4028/www.scientific.net/AMR.896.351
Dolah, Asban ; Abdul Hamid, Muhammad Azmi ; Deraman, Mohamad ; Yusof, Ashaari ; Ngah, Nor Azhadi ; Muhammad, Norman Fadhil Idham. / Ohmic contact in P-HEMT wafer using metallization with Ge/Au/Ni/Au. Advanced Materials Research. Vol. 896 Trans Tech Publications, 2014. pp. 351-353 (Advanced Materials Research).
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