Numerical modelling of ultra thin Cu(In,Ga)Se 2 solar cells

Nowshad Amin, Puvaneswaran Chelvanathan, M. Istiaque Hossain, Kamaruzzaman Sopian

Research output: Chapter in Book/Report/Conference proceedingConference contribution

40 Citations (Scopus)

Abstract

Various thicknesses of copper-indium-gallium-diselenide (CIGS) absorber layer are incorporated into numerical simulation by Solar Cell Capacitance Simulator (SCAPS) to investigate the performance of ultra thin CIGS solar cells. CuIn 1-xGa xSe 2 absorber layer thickness is varied from 0.3-1.0 μm. Results show that the performance of CIGS solar cells decreases as the absorber layer thickness is decreased. Conversion efficiencies of 10.74% and 14.36% are achieved for cells with 0.3 μm and 1.0 μm thick absorber layers, respectively. Incorporation of band gap grading or commonly known as back surface field in the ultra thin CIGS solar cells improves the performance of the cells. In this study, back surface field is incorporated in the numerical modelling of the ultrathin CIGS solar cells. For the graded cells, efficiencies of 12.38% and 17.26% are achieved for cells with 0.3 μm and 1.0 μm thick absorber layers. These improvements are attributed to the less recombination loss at the CIGS/Mo interface. This study shows ultra thin CIGS solar cells have comparable performance parameters with the conventional CIGS solar cells.

Original languageEnglish
Title of host publicationEnergy Procedia
Pages291-298
Number of pages8
Volume15
DOIs
Publication statusPublished - 2012
Event6th International Conference on Materials for Advanced Technologies, ICMAT 2011 - Singapore, Singapore
Duration: 26 Jun 20111 Jul 2011

Other

Other6th International Conference on Materials for Advanced Technologies, ICMAT 2011
CountrySingapore
CitySingapore
Period26/6/111/7/11

Fingerprint

Gallium
Indium
Solar cells
Copper
Conversion efficiency
Energy gap
Capacitance
Simulators
Computer simulation

Keywords

  • CIGS
  • SCAPS
  • Solar cells
  • Ultra thin film

ASJC Scopus subject areas

  • Energy(all)

Cite this

Amin, N., Chelvanathan, P., Hossain, M. I., & Sopian, K. (2012). Numerical modelling of ultra thin Cu(In,Ga)Se 2 solar cells In Energy Procedia (Vol. 15, pp. 291-298) https://doi.org/10.1016/j.egypro.2012.02.034

Numerical modelling of ultra thin Cu(In,Ga)Se 2 solar cells . / Amin, Nowshad; Chelvanathan, Puvaneswaran; Hossain, M. Istiaque; Sopian, Kamaruzzaman.

Energy Procedia. Vol. 15 2012. p. 291-298.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Amin, N, Chelvanathan, P, Hossain, MI & Sopian, K 2012, Numerical modelling of ultra thin Cu(In,Ga)Se 2 solar cells in Energy Procedia. vol. 15, pp. 291-298, 6th International Conference on Materials for Advanced Technologies, ICMAT 2011, Singapore, Singapore, 26/6/11. https://doi.org/10.1016/j.egypro.2012.02.034
Amin, Nowshad ; Chelvanathan, Puvaneswaran ; Hossain, M. Istiaque ; Sopian, Kamaruzzaman. / Numerical modelling of ultra thin Cu(In,Ga)Se 2 solar cells Energy Procedia. Vol. 15 2012. pp. 291-298
@inproceedings{93d6c9f9b9b84ff58d7956960ada53d3,
title = "Numerical modelling of ultra thin Cu(In,Ga)Se 2 solar cells",
abstract = "Various thicknesses of copper-indium-gallium-diselenide (CIGS) absorber layer are incorporated into numerical simulation by Solar Cell Capacitance Simulator (SCAPS) to investigate the performance of ultra thin CIGS solar cells. CuIn 1-xGa xSe 2 absorber layer thickness is varied from 0.3-1.0 μm. Results show that the performance of CIGS solar cells decreases as the absorber layer thickness is decreased. Conversion efficiencies of 10.74{\%} and 14.36{\%} are achieved for cells with 0.3 μm and 1.0 μm thick absorber layers, respectively. Incorporation of band gap grading or commonly known as back surface field in the ultra thin CIGS solar cells improves the performance of the cells. In this study, back surface field is incorporated in the numerical modelling of the ultrathin CIGS solar cells. For the graded cells, efficiencies of 12.38{\%} and 17.26{\%} are achieved for cells with 0.3 μm and 1.0 μm thick absorber layers. These improvements are attributed to the less recombination loss at the CIGS/Mo interface. This study shows ultra thin CIGS solar cells have comparable performance parameters with the conventional CIGS solar cells.",
keywords = "CIGS, SCAPS, Solar cells, Ultra thin film",
author = "Nowshad Amin and Puvaneswaran Chelvanathan and Hossain, {M. Istiaque} and Kamaruzzaman Sopian",
year = "2012",
doi = "10.1016/j.egypro.2012.02.034",
language = "English",
volume = "15",
pages = "291--298",
booktitle = "Energy Procedia",

}

TY - GEN

T1 - Numerical modelling of ultra thin Cu(In,Ga)Se 2 solar cells

AU - Amin, Nowshad

AU - Chelvanathan, Puvaneswaran

AU - Hossain, M. Istiaque

AU - Sopian, Kamaruzzaman

PY - 2012

Y1 - 2012

N2 - Various thicknesses of copper-indium-gallium-diselenide (CIGS) absorber layer are incorporated into numerical simulation by Solar Cell Capacitance Simulator (SCAPS) to investigate the performance of ultra thin CIGS solar cells. CuIn 1-xGa xSe 2 absorber layer thickness is varied from 0.3-1.0 μm. Results show that the performance of CIGS solar cells decreases as the absorber layer thickness is decreased. Conversion efficiencies of 10.74% and 14.36% are achieved for cells with 0.3 μm and 1.0 μm thick absorber layers, respectively. Incorporation of band gap grading or commonly known as back surface field in the ultra thin CIGS solar cells improves the performance of the cells. In this study, back surface field is incorporated in the numerical modelling of the ultrathin CIGS solar cells. For the graded cells, efficiencies of 12.38% and 17.26% are achieved for cells with 0.3 μm and 1.0 μm thick absorber layers. These improvements are attributed to the less recombination loss at the CIGS/Mo interface. This study shows ultra thin CIGS solar cells have comparable performance parameters with the conventional CIGS solar cells.

AB - Various thicknesses of copper-indium-gallium-diselenide (CIGS) absorber layer are incorporated into numerical simulation by Solar Cell Capacitance Simulator (SCAPS) to investigate the performance of ultra thin CIGS solar cells. CuIn 1-xGa xSe 2 absorber layer thickness is varied from 0.3-1.0 μm. Results show that the performance of CIGS solar cells decreases as the absorber layer thickness is decreased. Conversion efficiencies of 10.74% and 14.36% are achieved for cells with 0.3 μm and 1.0 μm thick absorber layers, respectively. Incorporation of band gap grading or commonly known as back surface field in the ultra thin CIGS solar cells improves the performance of the cells. In this study, back surface field is incorporated in the numerical modelling of the ultrathin CIGS solar cells. For the graded cells, efficiencies of 12.38% and 17.26% are achieved for cells with 0.3 μm and 1.0 μm thick absorber layers. These improvements are attributed to the less recombination loss at the CIGS/Mo interface. This study shows ultra thin CIGS solar cells have comparable performance parameters with the conventional CIGS solar cells.

KW - CIGS

KW - SCAPS

KW - Solar cells

KW - Ultra thin film

UR - http://www.scopus.com/inward/record.url?scp=84860512854&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84860512854&partnerID=8YFLogxK

U2 - 10.1016/j.egypro.2012.02.034

DO - 10.1016/j.egypro.2012.02.034

M3 - Conference contribution

VL - 15

SP - 291

EP - 298

BT - Energy Procedia

ER -