Numerical modeling of a diffusion-based in0.53Ga 0.47As lateral PIN photodiode for 10 gbit/s optical communication systems

P. Susthitha Menon N V Visvanathan, Kumarajah Kandiah, Sahbudin Shaari

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

A novel purely diffusion-based In0.53Ga0.47As lateral PIN photodiode was successfully modeled. Device dimensions are 12 × 1.8 μm2 with electrode spacing of 1.5 μm and width of 1 μm. The effective intrinsic region width is ∼0.2 μm. The 2D modeled device achieved responsivity of 0.765 A/W and -3dB frequency of 10.9 GHz and is able to cater for 10 Gbit/s optical communication system networks. The device was biased at -2V and illuminated with a 5 W/cm2 optical spot power at a wavelength of 1.55 μm. SNR ratio was recorded at 31.2 dB.

Original languageEnglish
Title of host publicationIEEE International Conference on Semiconductor Electronics, Proceedings, ICSE
Pages276-280
Number of pages5
DOIs
Publication statusPublished - 2006
Event2006 IEEE International Conference on Semiconductor Electronics, ICSE 2006 - Kuala Lumpur
Duration: 29 Nov 20061 Dec 2006

Other

Other2006 IEEE International Conference on Semiconductor Electronics, ICSE 2006
CityKuala Lumpur
Period29/11/061/12/06

Fingerprint

Optical communication
Photodiodes
Communication systems
Wavelength
Electrodes

ASJC Scopus subject areas

  • Engineering(all)

Cite this

N V Visvanathan, P. S. M., Kandiah, K., & Shaari, S. (2006). Numerical modeling of a diffusion-based in0.53Ga 0.47As lateral PIN photodiode for 10 gbit/s optical communication systems. In IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE (pp. 276-280). [4266614] https://doi.org/10.1109/SMELEC.2006.381064

Numerical modeling of a diffusion-based in0.53Ga 0.47As lateral PIN photodiode for 10 gbit/s optical communication systems. / N V Visvanathan, P. Susthitha Menon; Kandiah, Kumarajah; Shaari, Sahbudin.

IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. 2006. p. 276-280 4266614.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

N V Visvanathan, PSM, Kandiah, K & Shaari, S 2006, Numerical modeling of a diffusion-based in0.53Ga 0.47As lateral PIN photodiode for 10 gbit/s optical communication systems. in IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE., 4266614, pp. 276-280, 2006 IEEE International Conference on Semiconductor Electronics, ICSE 2006, Kuala Lumpur, 29/11/06. https://doi.org/10.1109/SMELEC.2006.381064
N V Visvanathan PSM, Kandiah K, Shaari S. Numerical modeling of a diffusion-based in0.53Ga 0.47As lateral PIN photodiode for 10 gbit/s optical communication systems. In IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. 2006. p. 276-280. 4266614 https://doi.org/10.1109/SMELEC.2006.381064
N V Visvanathan, P. Susthitha Menon ; Kandiah, Kumarajah ; Shaari, Sahbudin. / Numerical modeling of a diffusion-based in0.53Ga 0.47As lateral PIN photodiode for 10 gbit/s optical communication systems. IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. 2006. pp. 276-280
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