Numerical investigation of channel width variation in junctionless transistors performance

Arash Dehzangi, Farhad Larki, Burhanuddin Yeop Majlis, M. N. Hamidon, P. Susthitha Menon N V Visvanathan, Azman Jalar @ Jalil, Md. Shabiul Islam, Sawal Hamid Md Ali

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

Double gate junctionless (DGJLT) transistor, as a pinch off device, was previously fabricated. In this letter, the impact of channel width variation on behaviour of the device is studied by means of 3D-TCAD simulation tool. In this matter, the transfer characteristics, energy band diagram (valence/conduction band) and normal electric field along the nanowire between the source and the drain are studied at pinch off state. By decreasing the nanowire width, the on current decreases. Threshold voltage also reduced by decreasing the wire width. The highest electric field occurs at off state and the normal component of the electric field is stronger for smaller channel width. At pinch off state, the energy band diagrams revealed that a potential barrier against the current flow was built in channel which the smallest width has higher potential barrier. The overall result agrees with the behaviour of the nanowire junctionless transistors.

Original languageEnglish
Title of host publicationProceedings - RSM 2013: 2013 IEEE Regional Symposium on Micro and Nano Electronics
Pages101-104
Number of pages4
DOIs
Publication statusPublished - 2013
Event2013 IEEE Regional Symposium on Micro and Nano Electronics, RSM 2013 - Langkawi
Duration: 25 Sep 201327 Sep 2013

Other

Other2013 IEEE Regional Symposium on Micro and Nano Electronics, RSM 2013
CityLangkawi
Period25/9/1327/9/13

Fingerprint

Nanowires
Transistors
Electric fields
Band structure
Gates (transistor)
Conduction bands
Threshold voltage
Wire

Keywords

  • channel width effect
  • energy band diagram
  • Lateral gate Junctionless transistor
  • TCAD simulation

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Dehzangi, A., Larki, F., Yeop Majlis, B., Hamidon, M. N., N V Visvanathan, P. S. M., Jalar @ Jalil, A., ... Md Ali, S. H. (2013). Numerical investigation of channel width variation in junctionless transistors performance. In Proceedings - RSM 2013: 2013 IEEE Regional Symposium on Micro and Nano Electronics (pp. 101-104). [6706483] https://doi.org/10.1109/RSM.2013.6706483

Numerical investigation of channel width variation in junctionless transistors performance. / Dehzangi, Arash; Larki, Farhad; Yeop Majlis, Burhanuddin; Hamidon, M. N.; N V Visvanathan, P. Susthitha Menon; Jalar @ Jalil, Azman; Islam, Md. Shabiul; Md Ali, Sawal Hamid.

Proceedings - RSM 2013: 2013 IEEE Regional Symposium on Micro and Nano Electronics. 2013. p. 101-104 6706483.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Dehzangi, A, Larki, F, Yeop Majlis, B, Hamidon, MN, N V Visvanathan, PSM, Jalar @ Jalil, A, Islam, MS & Md Ali, SH 2013, Numerical investigation of channel width variation in junctionless transistors performance. in Proceedings - RSM 2013: 2013 IEEE Regional Symposium on Micro and Nano Electronics., 6706483, pp. 101-104, 2013 IEEE Regional Symposium on Micro and Nano Electronics, RSM 2013, Langkawi, 25/9/13. https://doi.org/10.1109/RSM.2013.6706483
Dehzangi A, Larki F, Yeop Majlis B, Hamidon MN, N V Visvanathan PSM, Jalar @ Jalil A et al. Numerical investigation of channel width variation in junctionless transistors performance. In Proceedings - RSM 2013: 2013 IEEE Regional Symposium on Micro and Nano Electronics. 2013. p. 101-104. 6706483 https://doi.org/10.1109/RSM.2013.6706483
Dehzangi, Arash ; Larki, Farhad ; Yeop Majlis, Burhanuddin ; Hamidon, M. N. ; N V Visvanathan, P. Susthitha Menon ; Jalar @ Jalil, Azman ; Islam, Md. Shabiul ; Md Ali, Sawal Hamid. / Numerical investigation of channel width variation in junctionless transistors performance. Proceedings - RSM 2013: 2013 IEEE Regional Symposium on Micro and Nano Electronics. 2013. pp. 101-104
@inproceedings{5448b35bb2a341f9be016806bce19b64,
title = "Numerical investigation of channel width variation in junctionless transistors performance",
abstract = "Double gate junctionless (DGJLT) transistor, as a pinch off device, was previously fabricated. In this letter, the impact of channel width variation on behaviour of the device is studied by means of 3D-TCAD simulation tool. In this matter, the transfer characteristics, energy band diagram (valence/conduction band) and normal electric field along the nanowire between the source and the drain are studied at pinch off state. By decreasing the nanowire width, the on current decreases. Threshold voltage also reduced by decreasing the wire width. The highest electric field occurs at off state and the normal component of the electric field is stronger for smaller channel width. At pinch off state, the energy band diagrams revealed that a potential barrier against the current flow was built in channel which the smallest width has higher potential barrier. The overall result agrees with the behaviour of the nanowire junctionless transistors.",
keywords = "channel width effect, energy band diagram, Lateral gate Junctionless transistor, TCAD simulation",
author = "Arash Dehzangi and Farhad Larki and {Yeop Majlis}, Burhanuddin and Hamidon, {M. N.} and {N V Visvanathan}, {P. Susthitha Menon} and {Jalar @ Jalil}, Azman and Islam, {Md. Shabiul} and {Md Ali}, {Sawal Hamid}",
year = "2013",
doi = "10.1109/RSM.2013.6706483",
language = "English",
isbn = "9781479911837",
pages = "101--104",
booktitle = "Proceedings - RSM 2013: 2013 IEEE Regional Symposium on Micro and Nano Electronics",

}

TY - GEN

T1 - Numerical investigation of channel width variation in junctionless transistors performance

AU - Dehzangi, Arash

AU - Larki, Farhad

AU - Yeop Majlis, Burhanuddin

AU - Hamidon, M. N.

AU - N V Visvanathan, P. Susthitha Menon

AU - Jalar @ Jalil, Azman

AU - Islam, Md. Shabiul

AU - Md Ali, Sawal Hamid

PY - 2013

Y1 - 2013

N2 - Double gate junctionless (DGJLT) transistor, as a pinch off device, was previously fabricated. In this letter, the impact of channel width variation on behaviour of the device is studied by means of 3D-TCAD simulation tool. In this matter, the transfer characteristics, energy band diagram (valence/conduction band) and normal electric field along the nanowire between the source and the drain are studied at pinch off state. By decreasing the nanowire width, the on current decreases. Threshold voltage also reduced by decreasing the wire width. The highest electric field occurs at off state and the normal component of the electric field is stronger for smaller channel width. At pinch off state, the energy band diagrams revealed that a potential barrier against the current flow was built in channel which the smallest width has higher potential barrier. The overall result agrees with the behaviour of the nanowire junctionless transistors.

AB - Double gate junctionless (DGJLT) transistor, as a pinch off device, was previously fabricated. In this letter, the impact of channel width variation on behaviour of the device is studied by means of 3D-TCAD simulation tool. In this matter, the transfer characteristics, energy band diagram (valence/conduction band) and normal electric field along the nanowire between the source and the drain are studied at pinch off state. By decreasing the nanowire width, the on current decreases. Threshold voltage also reduced by decreasing the wire width. The highest electric field occurs at off state and the normal component of the electric field is stronger for smaller channel width. At pinch off state, the energy band diagrams revealed that a potential barrier against the current flow was built in channel which the smallest width has higher potential barrier. The overall result agrees with the behaviour of the nanowire junctionless transistors.

KW - channel width effect

KW - energy band diagram

KW - Lateral gate Junctionless transistor

KW - TCAD simulation

UR - http://www.scopus.com/inward/record.url?scp=84893620020&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84893620020&partnerID=8YFLogxK

U2 - 10.1109/RSM.2013.6706483

DO - 10.1109/RSM.2013.6706483

M3 - Conference contribution

SN - 9781479911837

SP - 101

EP - 104

BT - Proceedings - RSM 2013: 2013 IEEE Regional Symposium on Micro and Nano Electronics

ER -