Numerical analysis on Zn xCd 1-xS/CdTe solar cells with different buffer layers, front and back contacts

Md Sharafat Hossain, M. M. Aliyu, M. A. Matin, T. Razykov, Kamaruzzaman Sopian, Nowshad Amin

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

In this work, a numerical analysis on cadmium stannate (Cd 2SnO 4) as front contact, zinc stannate (Zn 2SnO 4) as buffer layer and antimony telluride (Sb 2Te 3) with molybdenum (Mo) as back contact has been conducted in the conventional (SnO 2/CdS/CdTe/Ag) CdTe cell structures. Here, CdS window layer is replaced by zinc cadmium sulphide (Zn xCd 1-xS) aiming to improve efficiency and stability utilizing Analysis of Microelectronic and Photonic Structures (AMPS 1D) simulator. Efficiency as high as 17.0% has been found with 80 nm of Zn xCd 1-xS window layer for x0.1, 1 m of CdTe layer and 100 nm Zn 2SnO 4 buffer layer without Sb2Te 3 back contact. However, ZnO insertion shows lower conversion efficiencies of 11.84% and 14.26%, respectively with and without Sb 2Te 3 back contact. It has been found that 1 m of CdTe absorber layer, 70 nm of Zn xCd 1-xS (x0.1) window layer, 100 nm of Zn 2SnO 4 buffer layer and 100 nm Sb 2Te 3 back contact layer are sufficient for high efficiency (18.5%) Zn xCd 1-xS/CdTe cells. Moreover, it has been found that the cell normalized efficiency linearly decreases with the increasing operating temperature at the temperature gradient of 0.3%/C proving its stability as others.

Original languageEnglish
Title of host publication2011 IEEE Regional Symposium on Micro and Nanoelectronics, RSM 2011 - Programme and Abstracts
Pages60-64
Number of pages5
DOIs
Publication statusPublished - 2011
Event2011 IEEE Regional Symposium on Micro and Nano Electronics, RSM 2011 - Kota Kinabalu, Sabah
Duration: 28 Sep 201130 Sep 2011

Other

Other2011 IEEE Regional Symposium on Micro and Nano Electronics, RSM 2011
CityKota Kinabalu, Sabah
Period28/9/1130/9/11

Fingerprint

Buffer layers
Numerical analysis
Solar cells
Zinc
Cadmium sulfide
Antimony
Microelectronics
Cadmium
Thermal gradients
Photonics
Molybdenum
Conversion efficiency
Simulators
Temperature

Keywords

  • AMPS-1D
  • buffer layer
  • CdTe
  • Zn Cd S

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Hossain, M. S., Aliyu, M. M., Matin, M. A., Razykov, T., Sopian, K., & Amin, N. (2011). Numerical analysis on Zn xCd 1-xS/CdTe solar cells with different buffer layers, front and back contacts. In 2011 IEEE Regional Symposium on Micro and Nanoelectronics, RSM 2011 - Programme and Abstracts (pp. 60-64). [6088292] https://doi.org/10.1109/RSM.2011.6088292

Numerical analysis on Zn xCd 1-xS/CdTe solar cells with different buffer layers, front and back contacts. / Hossain, Md Sharafat; Aliyu, M. M.; Matin, M. A.; Razykov, T.; Sopian, Kamaruzzaman; Amin, Nowshad.

2011 IEEE Regional Symposium on Micro and Nanoelectronics, RSM 2011 - Programme and Abstracts. 2011. p. 60-64 6088292.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Hossain, MS, Aliyu, MM, Matin, MA, Razykov, T, Sopian, K & Amin, N 2011, Numerical analysis on Zn xCd 1-xS/CdTe solar cells with different buffer layers, front and back contacts. in 2011 IEEE Regional Symposium on Micro and Nanoelectronics, RSM 2011 - Programme and Abstracts., 6088292, pp. 60-64, 2011 IEEE Regional Symposium on Micro and Nano Electronics, RSM 2011, Kota Kinabalu, Sabah, 28/9/11. https://doi.org/10.1109/RSM.2011.6088292
Hossain MS, Aliyu MM, Matin MA, Razykov T, Sopian K, Amin N. Numerical analysis on Zn xCd 1-xS/CdTe solar cells with different buffer layers, front and back contacts. In 2011 IEEE Regional Symposium on Micro and Nanoelectronics, RSM 2011 - Programme and Abstracts. 2011. p. 60-64. 6088292 https://doi.org/10.1109/RSM.2011.6088292
Hossain, Md Sharafat ; Aliyu, M. M. ; Matin, M. A. ; Razykov, T. ; Sopian, Kamaruzzaman ; Amin, Nowshad. / Numerical analysis on Zn xCd 1-xS/CdTe solar cells with different buffer layers, front and back contacts. 2011 IEEE Regional Symposium on Micro and Nanoelectronics, RSM 2011 - Programme and Abstracts. 2011. pp. 60-64
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abstract = "In this work, a numerical analysis on cadmium stannate (Cd 2SnO 4) as front contact, zinc stannate (Zn 2SnO 4) as buffer layer and antimony telluride (Sb 2Te 3) with molybdenum (Mo) as back contact has been conducted in the conventional (SnO 2/CdS/CdTe/Ag) CdTe cell structures. Here, CdS window layer is replaced by zinc cadmium sulphide (Zn xCd 1-xS) aiming to improve efficiency and stability utilizing Analysis of Microelectronic and Photonic Structures (AMPS 1D) simulator. Efficiency as high as 17.0{\%} has been found with 80 nm of Zn xCd 1-xS window layer for x0.1, 1 m of CdTe layer and 100 nm Zn 2SnO 4 buffer layer without Sb2Te 3 back contact. However, ZnO insertion shows lower conversion efficiencies of 11.84{\%} and 14.26{\%}, respectively with and without Sb 2Te 3 back contact. It has been found that 1 m of CdTe absorber layer, 70 nm of Zn xCd 1-xS (x0.1) window layer, 100 nm of Zn 2SnO 4 buffer layer and 100 nm Sb 2Te 3 back contact layer are sufficient for high efficiency (18.5{\%}) Zn xCd 1-xS/CdTe cells. Moreover, it has been found that the cell normalized efficiency linearly decreases with the increasing operating temperature at the temperature gradient of 0.3{\%}/C proving its stability as others.",
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