Novel modification of an interdigitated lateral PIN photodetector electrode design based on photon absorption characteristics

Esther Loo Chee Hong, Sahbudin Shaari, Burhanuddin Yeop Majlis

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

A novel H-Space electrode is introduced as an alternative design to the interdigitated electrode of a p-i-n photodetector. H-Space electrode is considered to be capable of increasing both the quantum efficiencies and the responsitivity of the photodectors by means of a bridge structure. In order to analyze the effect of the design, the design was systematically simplified into a single cell by utilizing Matlab. Methods to identify the minuscule effects of a very short light pulse in the lateral PIN photodetector structure were carried out in microscopic proportion and this technique displays the incident light's erratic nature upon entering the photodetector. The Matlab software was used to collect drift current data based on individual drift changes of electrons arriving at the electrodes at a relation time period. An ideal range of 10μm was chosen as the size of the intrinsic region and a set of randomly generated incident photon with Gaussian characteristics were bombarded into the single cell structure. By limiting a low number of incoming photons per unit time with coherent waterfronts, at random locations between p and n electrodes, a set of very precise electron characteristic were obtained for a beam with a Gaussian spread of 5 micron. Data for generated current were analyzed based on individual drift changes of electrons with bulk mobilities arriving at the electrodes in a very short time period. We relate the data obtained from the H space electrode with those obtained from an interdigitated electrode.

Original languageEnglish
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
EditorsR.E. Longshore
Pages1-7
Number of pages7
Volume5881
DOIs
Publication statusPublished - 2005
EventInfrared and Photoelectronic Imagers and Detector Devices - San Diego, CA, United States
Duration: 31 Jul 20051 Aug 2005

Other

OtherInfrared and Photoelectronic Imagers and Detector Devices
CountryUnited States
CitySan Diego, CA
Period31/7/051/8/05

Fingerprint

Photodetectors
photometers
Photons
Electrodes
electrodes
photons
Electrons
bridges (structures)
electrons
cells
Quantum efficiency
quantum efficiency
proportion
computer programs
pulses

Keywords

  • Interdigitated electrodes
  • Photodetectors
  • Photon detection
  • PIN structures
  • Planar devices

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Cite this

Hong, E. L. C., Shaari, S., & Yeop Majlis, B. (2005). Novel modification of an interdigitated lateral PIN photodetector electrode design based on photon absorption characteristics. In R. E. Longshore (Ed.), Proceedings of SPIE - The International Society for Optical Engineering (Vol. 5881, pp. 1-7). [58810Q] https://doi.org/10.1117/12.614723

Novel modification of an interdigitated lateral PIN photodetector electrode design based on photon absorption characteristics. / Hong, Esther Loo Chee; Shaari, Sahbudin; Yeop Majlis, Burhanuddin.

Proceedings of SPIE - The International Society for Optical Engineering. ed. / R.E. Longshore. Vol. 5881 2005. p. 1-7 58810Q.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Hong, ELC, Shaari, S & Yeop Majlis, B 2005, Novel modification of an interdigitated lateral PIN photodetector electrode design based on photon absorption characteristics. in RE Longshore (ed.), Proceedings of SPIE - The International Society for Optical Engineering. vol. 5881, 58810Q, pp. 1-7, Infrared and Photoelectronic Imagers and Detector Devices, San Diego, CA, United States, 31/7/05. https://doi.org/10.1117/12.614723
Hong ELC, Shaari S, Yeop Majlis B. Novel modification of an interdigitated lateral PIN photodetector electrode design based on photon absorption characteristics. In Longshore RE, editor, Proceedings of SPIE - The International Society for Optical Engineering. Vol. 5881. 2005. p. 1-7. 58810Q https://doi.org/10.1117/12.614723
Hong, Esther Loo Chee ; Shaari, Sahbudin ; Yeop Majlis, Burhanuddin. / Novel modification of an interdigitated lateral PIN photodetector electrode design based on photon absorption characteristics. Proceedings of SPIE - The International Society for Optical Engineering. editor / R.E. Longshore. Vol. 5881 2005. pp. 1-7
@inproceedings{7fd96df061dd4e6abe627fe2634474cf,
title = "Novel modification of an interdigitated lateral PIN photodetector electrode design based on photon absorption characteristics",
abstract = "A novel H-Space electrode is introduced as an alternative design to the interdigitated electrode of a p-i-n photodetector. H-Space electrode is considered to be capable of increasing both the quantum efficiencies and the responsitivity of the photodectors by means of a bridge structure. In order to analyze the effect of the design, the design was systematically simplified into a single cell by utilizing Matlab. Methods to identify the minuscule effects of a very short light pulse in the lateral PIN photodetector structure were carried out in microscopic proportion and this technique displays the incident light's erratic nature upon entering the photodetector. The Matlab software was used to collect drift current data based on individual drift changes of electrons arriving at the electrodes at a relation time period. An ideal range of 10μm was chosen as the size of the intrinsic region and a set of randomly generated incident photon with Gaussian characteristics were bombarded into the single cell structure. By limiting a low number of incoming photons per unit time with coherent waterfronts, at random locations between p and n electrodes, a set of very precise electron characteristic were obtained for a beam with a Gaussian spread of 5 micron. Data for generated current were analyzed based on individual drift changes of electrons with bulk mobilities arriving at the electrodes in a very short time period. We relate the data obtained from the H space electrode with those obtained from an interdigitated electrode.",
keywords = "Interdigitated electrodes, Photodetectors, Photon detection, PIN structures, Planar devices",
author = "Hong, {Esther Loo Chee} and Sahbudin Shaari and {Yeop Majlis}, Burhanuddin",
year = "2005",
doi = "10.1117/12.614723",
language = "English",
volume = "5881",
pages = "1--7",
editor = "R.E. Longshore",
booktitle = "Proceedings of SPIE - The International Society for Optical Engineering",

}

TY - GEN

T1 - Novel modification of an interdigitated lateral PIN photodetector electrode design based on photon absorption characteristics

AU - Hong, Esther Loo Chee

AU - Shaari, Sahbudin

AU - Yeop Majlis, Burhanuddin

PY - 2005

Y1 - 2005

N2 - A novel H-Space electrode is introduced as an alternative design to the interdigitated electrode of a p-i-n photodetector. H-Space electrode is considered to be capable of increasing both the quantum efficiencies and the responsitivity of the photodectors by means of a bridge structure. In order to analyze the effect of the design, the design was systematically simplified into a single cell by utilizing Matlab. Methods to identify the minuscule effects of a very short light pulse in the lateral PIN photodetector structure were carried out in microscopic proportion and this technique displays the incident light's erratic nature upon entering the photodetector. The Matlab software was used to collect drift current data based on individual drift changes of electrons arriving at the electrodes at a relation time period. An ideal range of 10μm was chosen as the size of the intrinsic region and a set of randomly generated incident photon with Gaussian characteristics were bombarded into the single cell structure. By limiting a low number of incoming photons per unit time with coherent waterfronts, at random locations between p and n electrodes, a set of very precise electron characteristic were obtained for a beam with a Gaussian spread of 5 micron. Data for generated current were analyzed based on individual drift changes of electrons with bulk mobilities arriving at the electrodes in a very short time period. We relate the data obtained from the H space electrode with those obtained from an interdigitated electrode.

AB - A novel H-Space electrode is introduced as an alternative design to the interdigitated electrode of a p-i-n photodetector. H-Space electrode is considered to be capable of increasing both the quantum efficiencies and the responsitivity of the photodectors by means of a bridge structure. In order to analyze the effect of the design, the design was systematically simplified into a single cell by utilizing Matlab. Methods to identify the minuscule effects of a very short light pulse in the lateral PIN photodetector structure were carried out in microscopic proportion and this technique displays the incident light's erratic nature upon entering the photodetector. The Matlab software was used to collect drift current data based on individual drift changes of electrons arriving at the electrodes at a relation time period. An ideal range of 10μm was chosen as the size of the intrinsic region and a set of randomly generated incident photon with Gaussian characteristics were bombarded into the single cell structure. By limiting a low number of incoming photons per unit time with coherent waterfronts, at random locations between p and n electrodes, a set of very precise electron characteristic were obtained for a beam with a Gaussian spread of 5 micron. Data for generated current were analyzed based on individual drift changes of electrons with bulk mobilities arriving at the electrodes in a very short time period. We relate the data obtained from the H space electrode with those obtained from an interdigitated electrode.

KW - Interdigitated electrodes

KW - Photodetectors

KW - Photon detection

KW - PIN structures

KW - Planar devices

UR - http://www.scopus.com/inward/record.url?scp=29244441750&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=29244441750&partnerID=8YFLogxK

U2 - 10.1117/12.614723

DO - 10.1117/12.614723

M3 - Conference contribution

AN - SCOPUS:29244441750

VL - 5881

SP - 1

EP - 7

BT - Proceedings of SPIE - The International Society for Optical Engineering

A2 - Longshore, R.E.

ER -