Novel 3D modeling of an in0.53Ga0.47As lateral PIN photodiode

P. Susthitha Menon N V Visvanathan, Kumarajah Kandiah, Mohd Syuhaimi Ab Rahman, Sahbudin Shaari

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The lateral PIN photodiode (LPP) can be fabricated with ease using standard CMOS techniques such as diffusion or ion implantation to form the p+ and n+ wells in the absorbing layer. A novel diffusion-based three-dimensional LPP was modeled utilizing In0.53Ga0.47As as the absorbing layer. Interdigitated electrode structures were used to obtain responsivity of ∼0.5-0.6 A/W and -3dB frequency of ∼14-15 GHz at a wavelength of 1550 nm, bias voltage of 5V and optical power of 10 Wem-2. The modeled device is able to cater for 10 Gbit/s optical communication networks.

Original languageEnglish
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
Volume6798
DOIs
Publication statusPublished - 2008
EventMicroelectronics: Design, Technology, and Packaging III - Canberra, ACT
Duration: 5 Dec 20077 Dec 2007

Other

OtherMicroelectronics: Design, Technology, and Packaging III
CityCanberra, ACT
Period5/12/077/12/07

Fingerprint

Photodiodes
photodiodes
communication networks
Optical communication
Bias voltage
Fiber optic networks
Ion implantation
Telecommunication networks
optical communication
ion implantation
implantation
CMOS
Wavelength
Electrodes
electrodes
electric potential
wavelengths

Keywords

  • Diffusion
  • InGaAs
  • Lateral
  • Modeling
  • Photodiode
  • PIN
  • Simulation

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Cite this

N V Visvanathan, P. S. M., Kandiah, K., Ab Rahman, M. S., & Shaari, S. (2008). Novel 3D modeling of an in0.53Ga0.47As lateral PIN photodiode. In Proceedings of SPIE - The International Society for Optical Engineering (Vol. 6798). [679819] https://doi.org/10.1117/12.759055

Novel 3D modeling of an in0.53Ga0.47As lateral PIN photodiode. / N V Visvanathan, P. Susthitha Menon; Kandiah, Kumarajah; Ab Rahman, Mohd Syuhaimi; Shaari, Sahbudin.

Proceedings of SPIE - The International Society for Optical Engineering. Vol. 6798 2008. 679819.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

N V Visvanathan, PSM, Kandiah, K, Ab Rahman, MS & Shaari, S 2008, Novel 3D modeling of an in0.53Ga0.47As lateral PIN photodiode. in Proceedings of SPIE - The International Society for Optical Engineering. vol. 6798, 679819, Microelectronics: Design, Technology, and Packaging III, Canberra, ACT, 5/12/07. https://doi.org/10.1117/12.759055
N V Visvanathan PSM, Kandiah K, Ab Rahman MS, Shaari S. Novel 3D modeling of an in0.53Ga0.47As lateral PIN photodiode. In Proceedings of SPIE - The International Society for Optical Engineering. Vol. 6798. 2008. 679819 https://doi.org/10.1117/12.759055
N V Visvanathan, P. Susthitha Menon ; Kandiah, Kumarajah ; Ab Rahman, Mohd Syuhaimi ; Shaari, Sahbudin. / Novel 3D modeling of an in0.53Ga0.47As lateral PIN photodiode. Proceedings of SPIE - The International Society for Optical Engineering. Vol. 6798 2008.
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