Abstract
The lateral PIN photodiode (LPP) can be fabricated with ease using standard CMOS techniques such as diffusion or ion implantation to form the p+ and n+ wells in the absorbing layer. A novel diffusion-based three-dimensional LPP was modeled utilizing In0.53Ga0.47As as the absorbing layer. Interdigitated electrode structures were used to obtain responsivity of ∼0.5-0.6 A/W and -3dB frequency of ∼14-15 GHz at a wavelength of 1550 nm, bias voltage of 5V and optical power of 10 Wem-2. The modeled device is able to cater for 10 Gbit/s optical communication networks.
| Original language | English |
|---|---|
| Title of host publication | Proceedings of SPIE - The International Society for Optical Engineering |
| Volume | 6798 |
| DOIs | |
| Publication status | Published - 2008 |
| Event | Microelectronics: Design, Technology, and Packaging III - Canberra, ACT Duration: 5 Dec 2007 → 7 Dec 2007 |
Other
| Other | Microelectronics: Design, Technology, and Packaging III |
|---|---|
| City | Canberra, ACT |
| Period | 5/12/07 → 7/12/07 |
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Keywords
- Diffusion
- InGaAs
- Lateral
- Modeling
- Photodiode
- PIN
- Simulation
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Condensed Matter Physics
Cite this
Novel 3D modeling of an in0.53Ga0.47As lateral PIN photodiode. / N V Visvanathan, P. Susthitha Menon; Kandiah, Kumarajah; Ab Rahman, Mohd Syuhaimi; Shaari, Sahbudin.
Proceedings of SPIE - The International Society for Optical Engineering. Vol. 6798 2008. 679819.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Novel 3D modeling of an in0.53Ga0.47As lateral PIN photodiode
AU - N V Visvanathan, P. Susthitha Menon
AU - Kandiah, Kumarajah
AU - Ab Rahman, Mohd Syuhaimi
AU - Shaari, Sahbudin
PY - 2008
Y1 - 2008
N2 - The lateral PIN photodiode (LPP) can be fabricated with ease using standard CMOS techniques such as diffusion or ion implantation to form the p+ and n+ wells in the absorbing layer. A novel diffusion-based three-dimensional LPP was modeled utilizing In0.53Ga0.47As as the absorbing layer. Interdigitated electrode structures were used to obtain responsivity of ∼0.5-0.6 A/W and -3dB frequency of ∼14-15 GHz at a wavelength of 1550 nm, bias voltage of 5V and optical power of 10 Wem-2. The modeled device is able to cater for 10 Gbit/s optical communication networks.
AB - The lateral PIN photodiode (LPP) can be fabricated with ease using standard CMOS techniques such as diffusion or ion implantation to form the p+ and n+ wells in the absorbing layer. A novel diffusion-based three-dimensional LPP was modeled utilizing In0.53Ga0.47As as the absorbing layer. Interdigitated electrode structures were used to obtain responsivity of ∼0.5-0.6 A/W and -3dB frequency of ∼14-15 GHz at a wavelength of 1550 nm, bias voltage of 5V and optical power of 10 Wem-2. The modeled device is able to cater for 10 Gbit/s optical communication networks.
KW - Diffusion
KW - InGaAs
KW - Lateral
KW - Modeling
KW - Photodiode
KW - PIN
KW - Simulation
UR - http://www.scopus.com/inward/record.url?scp=43249124423&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=43249124423&partnerID=8YFLogxK
U2 - 10.1117/12.759055
DO - 10.1117/12.759055
M3 - Conference contribution
AN - SCOPUS:43249124423
SN - 9780819469694
VL - 6798
BT - Proceedings of SPIE - The International Society for Optical Engineering
ER -