Normally-Off Tri-Gate GaN MIS-HEMTs with 0.76 mΩ·cm2 Specific On-Resistance for Power Device Applications

Chia Hsun Wu, Jian You Chen, Ping Cheng Han, Ming Wen Lee, Kun Sheng Yang, Huan Chung Wang, Po Chun Chang, Quang Ho Luc, Yueh Chin Lin, Chang Fu Dee, Azrul Azlan Hamzah, Edward Yi Chang

Research output: Contribution to journalArticle

Abstract

A GaN metal-insulator-semiconductor high electron mobility transistor (MIS-HEMT) using tri-gate architecture and hybrid ferroelectric charge trap gate stack is demonstrated for normally-off operation. Compared with the conventional planar device, the tri-gate device has the 2-D electron gas (2-DEG) channel exposed on the nanowire sidewalls, so that the trapped charges in the HfON charge-trapping layer can easily deplete the channel from the sidewalls, leading to a high positive threshold voltage ( Vth ) to realize the normally-off operation. Moreover, through this electrostatic control on the sidewall, a high density of negative charge caused by hybrid ferroelectric charge trap gate stack with the optimized tri-gate structure, the tri-gate device can achieve normally-off GaN device with both low on-resistance ( R mathrmON ) and high positive Vth. The designed tri-gate device exhibits a high Vth of +2.61 V at current density ( IDS) = 1A mm, a high maximum current density ( I}DS, MAX ) of 896 mA/mm, a low R\mathrmON of 5.0Ω · mm and a high breakdown voltage (BV) of 788 V. To the best of our knowledge, the proposed tri-gate device shows the lowest specific on-resistance ( R \mathrmON}, \text SP ) among reported normally-off GaN device results with BV >650 V.

Original languageEnglish
Article number8756227
Pages (from-to)3441-3446
Number of pages6
JournalIEEE Transactions on Electron Devices
Volume66
Issue number8
DOIs
Publication statusPublished - 1 Aug 2019

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Management information systems
High electron mobility transistors
Electric breakdown
Ferroelectric materials
Current density
Charge trapping
Electron gas
Threshold voltage
Nanowires
Electrostatics
Metals
Semiconductor materials

Keywords

  • AlGaN/GaN
  • charge trap gate stack
  • enhancement mode
  • ferroelectric materials
  • MIS-HEMT
  • normally-off
  • tri-gate

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Wu, C. H., Chen, J. Y., Han, P. C., Lee, M. W., Yang, K. S., Wang, H. C., ... Chang, E. Y. (2019). Normally-Off Tri-Gate GaN MIS-HEMTs with 0.76 mΩ·cm2 Specific On-Resistance for Power Device Applications. IEEE Transactions on Electron Devices, 66(8), 3441-3446. [8756227]. https://doi.org/10.1109/TED.2019.2922301

Normally-Off Tri-Gate GaN MIS-HEMTs with 0.76 mΩ·cm2 Specific On-Resistance for Power Device Applications. / Wu, Chia Hsun; Chen, Jian You; Han, Ping Cheng; Lee, Ming Wen; Yang, Kun Sheng; Wang, Huan Chung; Chang, Po Chun; Luc, Quang Ho; Lin, Yueh Chin; Dee, Chang Fu; Hamzah, Azrul Azlan; Chang, Edward Yi.

In: IEEE Transactions on Electron Devices, Vol. 66, No. 8, 8756227, 01.08.2019, p. 3441-3446.

Research output: Contribution to journalArticle

Wu, CH, Chen, JY, Han, PC, Lee, MW, Yang, KS, Wang, HC, Chang, PC, Luc, QH, Lin, YC, Dee, CF, Hamzah, AA & Chang, EY 2019, 'Normally-Off Tri-Gate GaN MIS-HEMTs with 0.76 mΩ·cm2 Specific On-Resistance for Power Device Applications', IEEE Transactions on Electron Devices, vol. 66, no. 8, 8756227, pp. 3441-3446. https://doi.org/10.1109/TED.2019.2922301
Wu, Chia Hsun ; Chen, Jian You ; Han, Ping Cheng ; Lee, Ming Wen ; Yang, Kun Sheng ; Wang, Huan Chung ; Chang, Po Chun ; Luc, Quang Ho ; Lin, Yueh Chin ; Dee, Chang Fu ; Hamzah, Azrul Azlan ; Chang, Edward Yi. / Normally-Off Tri-Gate GaN MIS-HEMTs with 0.76 mΩ·cm2 Specific On-Resistance for Power Device Applications. In: IEEE Transactions on Electron Devices. 2019 ; Vol. 66, No. 8. pp. 3441-3446.
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abstract = "A GaN metal-insulator-semiconductor high electron mobility transistor (MIS-HEMT) using tri-gate architecture and hybrid ferroelectric charge trap gate stack is demonstrated for normally-off operation. Compared with the conventional planar device, the tri-gate device has the 2-D electron gas (2-DEG) channel exposed on the nanowire sidewalls, so that the trapped charges in the HfON charge-trapping layer can easily deplete the channel from the sidewalls, leading to a high positive threshold voltage ( Vth ) to realize the normally-off operation. Moreover, through this electrostatic control on the sidewall, a high density of negative charge caused by hybrid ferroelectric charge trap gate stack with the optimized tri-gate structure, the tri-gate device can achieve normally-off GaN device with both low on-resistance ( R mathrmON ) and high positive Vth. The designed tri-gate device exhibits a high Vth of +2.61 V at current density ( IDS) = 1A mm, a high maximum current density ( I}DS, MAX ) of 896 mA/mm, a low R\mathrmON of 5.0Ω · mm and a high breakdown voltage (BV) of 788 V. To the best of our knowledge, the proposed tri-gate device shows the lowest specific on-resistance ( R \mathrmON}, \text SP ) among reported normally-off GaN device results with BV >650 V.",
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AU - Yang, Kun Sheng

AU - Wang, Huan Chung

AU - Chang, Po Chun

AU - Luc, Quang Ho

AU - Lin, Yueh Chin

AU - Dee, Chang Fu

AU - Hamzah, Azrul Azlan

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N2 - A GaN metal-insulator-semiconductor high electron mobility transistor (MIS-HEMT) using tri-gate architecture and hybrid ferroelectric charge trap gate stack is demonstrated for normally-off operation. Compared with the conventional planar device, the tri-gate device has the 2-D electron gas (2-DEG) channel exposed on the nanowire sidewalls, so that the trapped charges in the HfON charge-trapping layer can easily deplete the channel from the sidewalls, leading to a high positive threshold voltage ( Vth ) to realize the normally-off operation. Moreover, through this electrostatic control on the sidewall, a high density of negative charge caused by hybrid ferroelectric charge trap gate stack with the optimized tri-gate structure, the tri-gate device can achieve normally-off GaN device with both low on-resistance ( R mathrmON ) and high positive Vth. The designed tri-gate device exhibits a high Vth of +2.61 V at current density ( IDS) = 1A mm, a high maximum current density ( I}DS, MAX ) of 896 mA/mm, a low R\mathrmON of 5.0Ω · mm and a high breakdown voltage (BV) of 788 V. To the best of our knowledge, the proposed tri-gate device shows the lowest specific on-resistance ( R \mathrmON}, \text SP ) among reported normally-off GaN device results with BV >650 V.

AB - A GaN metal-insulator-semiconductor high electron mobility transistor (MIS-HEMT) using tri-gate architecture and hybrid ferroelectric charge trap gate stack is demonstrated for normally-off operation. Compared with the conventional planar device, the tri-gate device has the 2-D electron gas (2-DEG) channel exposed on the nanowire sidewalls, so that the trapped charges in the HfON charge-trapping layer can easily deplete the channel from the sidewalls, leading to a high positive threshold voltage ( Vth ) to realize the normally-off operation. Moreover, through this electrostatic control on the sidewall, a high density of negative charge caused by hybrid ferroelectric charge trap gate stack with the optimized tri-gate structure, the tri-gate device can achieve normally-off GaN device with both low on-resistance ( R mathrmON ) and high positive Vth. The designed tri-gate device exhibits a high Vth of +2.61 V at current density ( IDS) = 1A mm, a high maximum current density ( I}DS, MAX ) of 896 mA/mm, a low R\mathrmON of 5.0Ω · mm and a high breakdown voltage (BV) of 788 V. To the best of our knowledge, the proposed tri-gate device shows the lowest specific on-resistance ( R \mathrmON}, \text SP ) among reported normally-off GaN device results with BV >650 V.

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