Non-stoichiometric GaAsBi/GaAs (100) molecular beam epitaxy growth

F. Bastiman, Abdul Rahman Mohmad, J. S. Ng, J. P R David, S. J. Sweeney

Research output: Contribution to journalArticle

46 Citations (Scopus)

Abstract

The growth of IIIV bismuthides is complicated by the low incorporation efficiency of Bi in GaAs, leading either to the formation of metallic Bi droplets or low layer composition fractions. Typically growth is performed between 280 and 350 °C and at near stoichiometric Ga:As fluxes in order to encourage Bi incorporation. However most work reported to date also utilises As 2 as the As overpressure constituent. It is found in this work that growth with As 4 allows high Bi composition films with the standard 1:20 Ga:As 4 beam equivalent pressure ratio (BEPR) utilised for higher temperature buffer layer growth. The Bi fraction versus Bi:As 4 BEPR is found to be initially linear, until a maximum value is obtained for a given temperature after which the continued oversupply of Bi results in the formation of droplets.

Original languageEnglish
Pages (from-to)57-61
Number of pages5
JournalJournal of Crystal Growth
Volume338
Issue number1
DOIs
Publication statusPublished - 1 Jan 2012

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Molecular beam epitaxy
molecular beam epitaxy
pressure ratio
overpressure
Buffer layers
Chemical analysis
buffers
Fluxes
Temperature
gallium arsenide
temperature

Keywords

  • A1. Scanning tunnelling microscopy
  • A3. Molecular beam epitaxy
  • B1. Bismuth
  • B2. Semiconductor IIIV materials

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Materials Chemistry
  • Inorganic Chemistry

Cite this

Non-stoichiometric GaAsBi/GaAs (100) molecular beam epitaxy growth. / Bastiman, F.; Mohmad, Abdul Rahman; Ng, J. S.; David, J. P R; Sweeney, S. J.

In: Journal of Crystal Growth, Vol. 338, No. 1, 01.01.2012, p. 57-61.

Research output: Contribution to journalArticle

Bastiman, F. ; Mohmad, Abdul Rahman ; Ng, J. S. ; David, J. P R ; Sweeney, S. J. / Non-stoichiometric GaAsBi/GaAs (100) molecular beam epitaxy growth. In: Journal of Crystal Growth. 2012 ; Vol. 338, No. 1. pp. 57-61.
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