Non-equilibrium critical point in Be-doped low-temperature-grown GaAs

Mohd Ambri Mohamed, Pham Tien Lam, N. Otsuka

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

We studied the transition process of antisite arsenic defects in Be-doped low-temperature-grown GaAs layers by measuring the magnetization. This material exhibits bistability at non-equilibrium; at a fixed temperature in a fixed magnetic field a sample relaxes towards two different states, depending on the preceding cooling process. We observed anomalously large magnetization fluctuations in macroscopic samples during the transition from bistability to monostability with gradual change of the temperature. Slowing down of the relaxation of the magnetization is observed as a sample approaches the transition into monostability. Large fluctuations observed from a two-piece sample exhibit intermittent bursts by high-pass filtering and follow a generalized Gumbel probability density distribution. These observations suggest a possibility of the occurrence of a non-equilibrium critical point in this material. Microscopic processes underlying the observed phenomena are discussed with results of first-principles calculations of strain fields.

Original languageEnglish
Article number053504
JournalJournal of Applied Physics
Volume113
Issue number5
DOIs
Publication statusPublished - 7 Feb 2013
Externally publishedYes

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critical point
magnetization
arsenic
density distribution
bursts
occurrences
cooling
temperature
defects
magnetic fields

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Non-equilibrium critical point in Be-doped low-temperature-grown GaAs. / Mohamed, Mohd Ambri; Tien Lam, Pham; Otsuka, N.

In: Journal of Applied Physics, Vol. 113, No. 5, 053504, 07.02.2013.

Research output: Contribution to journalArticle

@article{5f96334133d24606bee61adea95d6d03,
title = "Non-equilibrium critical point in Be-doped low-temperature-grown GaAs",
abstract = "We studied the transition process of antisite arsenic defects in Be-doped low-temperature-grown GaAs layers by measuring the magnetization. This material exhibits bistability at non-equilibrium; at a fixed temperature in a fixed magnetic field a sample relaxes towards two different states, depending on the preceding cooling process. We observed anomalously large magnetization fluctuations in macroscopic samples during the transition from bistability to monostability with gradual change of the temperature. Slowing down of the relaxation of the magnetization is observed as a sample approaches the transition into monostability. Large fluctuations observed from a two-piece sample exhibit intermittent bursts by high-pass filtering and follow a generalized Gumbel probability density distribution. These observations suggest a possibility of the occurrence of a non-equilibrium critical point in this material. Microscopic processes underlying the observed phenomena are discussed with results of first-principles calculations of strain fields.",
author = "Mohamed, {Mohd Ambri} and {Tien Lam}, Pham and N. Otsuka",
year = "2013",
month = "2",
day = "7",
doi = "10.1063/1.4790313",
language = "English",
volume = "113",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "5",

}

TY - JOUR

T1 - Non-equilibrium critical point in Be-doped low-temperature-grown GaAs

AU - Mohamed, Mohd Ambri

AU - Tien Lam, Pham

AU - Otsuka, N.

PY - 2013/2/7

Y1 - 2013/2/7

N2 - We studied the transition process of antisite arsenic defects in Be-doped low-temperature-grown GaAs layers by measuring the magnetization. This material exhibits bistability at non-equilibrium; at a fixed temperature in a fixed magnetic field a sample relaxes towards two different states, depending on the preceding cooling process. We observed anomalously large magnetization fluctuations in macroscopic samples during the transition from bistability to monostability with gradual change of the temperature. Slowing down of the relaxation of the magnetization is observed as a sample approaches the transition into monostability. Large fluctuations observed from a two-piece sample exhibit intermittent bursts by high-pass filtering and follow a generalized Gumbel probability density distribution. These observations suggest a possibility of the occurrence of a non-equilibrium critical point in this material. Microscopic processes underlying the observed phenomena are discussed with results of first-principles calculations of strain fields.

AB - We studied the transition process of antisite arsenic defects in Be-doped low-temperature-grown GaAs layers by measuring the magnetization. This material exhibits bistability at non-equilibrium; at a fixed temperature in a fixed magnetic field a sample relaxes towards two different states, depending on the preceding cooling process. We observed anomalously large magnetization fluctuations in macroscopic samples during the transition from bistability to monostability with gradual change of the temperature. Slowing down of the relaxation of the magnetization is observed as a sample approaches the transition into monostability. Large fluctuations observed from a two-piece sample exhibit intermittent bursts by high-pass filtering and follow a generalized Gumbel probability density distribution. These observations suggest a possibility of the occurrence of a non-equilibrium critical point in this material. Microscopic processes underlying the observed phenomena are discussed with results of first-principles calculations of strain fields.

UR - http://www.scopus.com/inward/record.url?scp=84873654842&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84873654842&partnerID=8YFLogxK

U2 - 10.1063/1.4790313

DO - 10.1063/1.4790313

M3 - Article

VL - 113

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 5

M1 - 053504

ER -