New simulation method to characterize the recoverable component of dynamic negative-bias temperature instability in p-channel metal-oxide-semiconductor field-effect transistors

H. Hussin, N. Soin, Muhammad Faiz Bukhori, Y. Abdul Wahab, S. Shahabuddin

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

We introduce a new simulation technique to investigate the recovery characteristics of dynamic negative-bias temperature instability (NBTI) in conventional silicon dioxide (SiO2) dielectric p-channel metal-oxide-semiconductor field-effect transistors (p-MOSFETs) based on the hydrogen diffusion and hole-trapping mechanisms. In this work, a sequence of train pulses on the gate terminal were applied to simulated p-MOSFETs in single and multiple runs, thus emulating repetitive cycles of stress and recovery. The effects of varying the applied stress voltages, temperatures, and durations were then analyzed. The recoverable component, R, of degradation was found to increase when the magnitudes of the applied stress voltage and temperature were increased. Moreover, the R was reduced when the recovery time was increased for a single run. In contrast, the R increased when the recovery time was increased for multiple runs. The normalized R of the simulated device was found to decrease by 0.7% and to increase by 7% with respect to the shortest recovery duration for a single run and for multiple runs, respectively. In addition, we measured the effects of equivalent oxide thickness (EOT) on the R and found that, in our study, the R for a transistor with a smaller EOT exhibited a substantial increase of 84% compared with that for a transistor with a larger EOT. These characteristics of the R of dynamic NBTI could be explained from the perspectives of the reaction-diffusion (R-D) model and hole-trapping mechanism. The results suggested that the underlying connection between these two mechanisms was the interface trap concentration, which represents the permanent components in both mechanisms.

Original languageEnglish
Pages (from-to)1207-1213
Number of pages7
JournalJournal of Electronic Materials
Volume43
Issue number4
DOIs
Publication statusPublished - 2014

Fingerprint

MOSFET devices
metal oxide semiconductors
field effect transistors
recovery
Recovery
Oxides
simulation
oxides
Transistors
transistors
trapping
temperature
Electric potential
electric potential
Silicon Dioxide
Hydrogen
Silica
Negative bias temperature instability
traps
degradation

Keywords

  • MOSFET
  • NBTI
  • oxide defects
  • reaction-diffusion
  • Reliability

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Materials Chemistry

Cite this

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title = "New simulation method to characterize the recoverable component of dynamic negative-bias temperature instability in p-channel metal-oxide-semiconductor field-effect transistors",
abstract = "We introduce a new simulation technique to investigate the recovery characteristics of dynamic negative-bias temperature instability (NBTI) in conventional silicon dioxide (SiO2) dielectric p-channel metal-oxide-semiconductor field-effect transistors (p-MOSFETs) based on the hydrogen diffusion and hole-trapping mechanisms. In this work, a sequence of train pulses on the gate terminal were applied to simulated p-MOSFETs in single and multiple runs, thus emulating repetitive cycles of stress and recovery. The effects of varying the applied stress voltages, temperatures, and durations were then analyzed. The recoverable component, R, of degradation was found to increase when the magnitudes of the applied stress voltage and temperature were increased. Moreover, the R was reduced when the recovery time was increased for a single run. In contrast, the R increased when the recovery time was increased for multiple runs. The normalized R of the simulated device was found to decrease by 0.7{\%} and to increase by 7{\%} with respect to the shortest recovery duration for a single run and for multiple runs, respectively. In addition, we measured the effects of equivalent oxide thickness (EOT) on the R and found that, in our study, the R for a transistor with a smaller EOT exhibited a substantial increase of 84{\%} compared with that for a transistor with a larger EOT. These characteristics of the R of dynamic NBTI could be explained from the perspectives of the reaction-diffusion (R-D) model and hole-trapping mechanism. The results suggested that the underlying connection between these two mechanisms was the interface trap concentration, which represents the permanent components in both mechanisms.",
keywords = "MOSFET, NBTI, oxide defects, reaction-diffusion, Reliability",
author = "H. Hussin and N. Soin and Bukhori, {Muhammad Faiz} and {Abdul Wahab}, Y. and S. Shahabuddin",
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TY - JOUR

T1 - New simulation method to characterize the recoverable component of dynamic negative-bias temperature instability in p-channel metal-oxide-semiconductor field-effect transistors

AU - Hussin, H.

AU - Soin, N.

AU - Bukhori, Muhammad Faiz

AU - Abdul Wahab, Y.

AU - Shahabuddin, S.

PY - 2014

Y1 - 2014

N2 - We introduce a new simulation technique to investigate the recovery characteristics of dynamic negative-bias temperature instability (NBTI) in conventional silicon dioxide (SiO2) dielectric p-channel metal-oxide-semiconductor field-effect transistors (p-MOSFETs) based on the hydrogen diffusion and hole-trapping mechanisms. In this work, a sequence of train pulses on the gate terminal were applied to simulated p-MOSFETs in single and multiple runs, thus emulating repetitive cycles of stress and recovery. The effects of varying the applied stress voltages, temperatures, and durations were then analyzed. The recoverable component, R, of degradation was found to increase when the magnitudes of the applied stress voltage and temperature were increased. Moreover, the R was reduced when the recovery time was increased for a single run. In contrast, the R increased when the recovery time was increased for multiple runs. The normalized R of the simulated device was found to decrease by 0.7% and to increase by 7% with respect to the shortest recovery duration for a single run and for multiple runs, respectively. In addition, we measured the effects of equivalent oxide thickness (EOT) on the R and found that, in our study, the R for a transistor with a smaller EOT exhibited a substantial increase of 84% compared with that for a transistor with a larger EOT. These characteristics of the R of dynamic NBTI could be explained from the perspectives of the reaction-diffusion (R-D) model and hole-trapping mechanism. The results suggested that the underlying connection between these two mechanisms was the interface trap concentration, which represents the permanent components in both mechanisms.

AB - We introduce a new simulation technique to investigate the recovery characteristics of dynamic negative-bias temperature instability (NBTI) in conventional silicon dioxide (SiO2) dielectric p-channel metal-oxide-semiconductor field-effect transistors (p-MOSFETs) based on the hydrogen diffusion and hole-trapping mechanisms. In this work, a sequence of train pulses on the gate terminal were applied to simulated p-MOSFETs in single and multiple runs, thus emulating repetitive cycles of stress and recovery. The effects of varying the applied stress voltages, temperatures, and durations were then analyzed. The recoverable component, R, of degradation was found to increase when the magnitudes of the applied stress voltage and temperature were increased. Moreover, the R was reduced when the recovery time was increased for a single run. In contrast, the R increased when the recovery time was increased for multiple runs. The normalized R of the simulated device was found to decrease by 0.7% and to increase by 7% with respect to the shortest recovery duration for a single run and for multiple runs, respectively. In addition, we measured the effects of equivalent oxide thickness (EOT) on the R and found that, in our study, the R for a transistor with a smaller EOT exhibited a substantial increase of 84% compared with that for a transistor with a larger EOT. These characteristics of the R of dynamic NBTI could be explained from the perspectives of the reaction-diffusion (R-D) model and hole-trapping mechanism. The results suggested that the underlying connection between these two mechanisms was the interface trap concentration, which represents the permanent components in both mechanisms.

KW - MOSFET

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KW - oxide defects

KW - reaction-diffusion

KW - Reliability

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