Abstract
In this study, CdS:O thin films were prepared from a 99.999% CdS target by reactive sputtering in a Ar:O2 (99:1) ambient with different RF power at room temperature. The deposited films were studied by means of XRD, SEM, EDX, Hall Effect and UV-Vis spectrometry. The incorporations of O2 into the films were observed to increase with the decrease of deposition power. The cryatallinity of the films were reduced, whereas the band gaps of the films were increased by the increase of O2 content on the films. The films were found in nano-structured grains with a compact surface. It has been seen that the highest carrier density is observed in the film with O2 at.% 21.10, while the values decreased with the further increase or decrease of O2 content on the films; indicating that specific amount of donor like O2 atoms substitute to the S atoms can improve the carrier density of the CdS:O thin film.
| Original language | English |
|---|---|
| Title of host publication | International Conference on Mathematics, Engineering and Industrial Applications, ICoMEIA 2014 |
| Publisher | American Institute of Physics Inc. |
| Volume | 1660 |
| ISBN (Electronic) | 9780735413047 |
| DOIs | |
| Publication status | Published - 15 May 2015 |
| Event | International Conference on Mathematics, Engineering and Industrial Applications, ICoMEIA 2014 - Penang, Malaysia Duration: 28 May 2014 → 30 May 2014 |
Other
| Other | International Conference on Mathematics, Engineering and Industrial Applications, ICoMEIA 2014 |
|---|---|
| Country | Malaysia |
| City | Penang |
| Period | 28/5/14 → 30/5/14 |
Fingerprint
Keywords
- bandgap
- CdS:O thin film
- nano-structure
- reactive sputtering
ASJC Scopus subject areas
- Physics and Astronomy(all)
Cite this
Nanostructured and wide bandgap CdS : O thin films grown by reactive RF sputtering. / Islam, M. A.; Rahman, K. S.; Haque, F.; Rashid, M. J.; Akhtaruzzaman, Md.; Sopian, Kamaruzzaman; Sulaiman, Y.; Amin, Nowshad.
International Conference on Mathematics, Engineering and Industrial Applications, ICoMEIA 2014. Vol. 1660 American Institute of Physics Inc., 2015. 070048.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Nanostructured and wide bandgap CdS
T2 - O thin films grown by reactive RF sputtering
AU - Islam, M. A.
AU - Rahman, K. S.
AU - Haque, F.
AU - Rashid, M. J.
AU - Akhtaruzzaman, Md.
AU - Sopian, Kamaruzzaman
AU - Sulaiman, Y.
AU - Amin, Nowshad
PY - 2015/5/15
Y1 - 2015/5/15
N2 - In this study, CdS:O thin films were prepared from a 99.999% CdS target by reactive sputtering in a Ar:O2 (99:1) ambient with different RF power at room temperature. The deposited films were studied by means of XRD, SEM, EDX, Hall Effect and UV-Vis spectrometry. The incorporations of O2 into the films were observed to increase with the decrease of deposition power. The cryatallinity of the films were reduced, whereas the band gaps of the films were increased by the increase of O2 content on the films. The films were found in nano-structured grains with a compact surface. It has been seen that the highest carrier density is observed in the film with O2 at.% 21.10, while the values decreased with the further increase or decrease of O2 content on the films; indicating that specific amount of donor like O2 atoms substitute to the S atoms can improve the carrier density of the CdS:O thin film.
AB - In this study, CdS:O thin films were prepared from a 99.999% CdS target by reactive sputtering in a Ar:O2 (99:1) ambient with different RF power at room temperature. The deposited films were studied by means of XRD, SEM, EDX, Hall Effect and UV-Vis spectrometry. The incorporations of O2 into the films were observed to increase with the decrease of deposition power. The cryatallinity of the films were reduced, whereas the band gaps of the films were increased by the increase of O2 content on the films. The films were found in nano-structured grains with a compact surface. It has been seen that the highest carrier density is observed in the film with O2 at.% 21.10, while the values decreased with the further increase or decrease of O2 content on the films; indicating that specific amount of donor like O2 atoms substitute to the S atoms can improve the carrier density of the CdS:O thin film.
KW - bandgap
KW - CdS:O thin film
KW - nano-structure
KW - reactive sputtering
UR - http://www.scopus.com/inward/record.url?scp=85006186613&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85006186613&partnerID=8YFLogxK
U2 - 10.1063/1.4915766
DO - 10.1063/1.4915766
M3 - Conference contribution
VL - 1660
BT - International Conference on Mathematics, Engineering and Industrial Applications, ICoMEIA 2014
PB - American Institute of Physics Inc.
ER -