Nanostructured and wide bandgap CdS

O thin films grown by reactive RF sputtering

M. A. Islam, K. S. Rahman, F. Haque, M. J. Rashid, Md. Akhtaruzzaman, Kamaruzzaman Sopian, Y. Sulaiman, Nowshad Amin

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

In this study, CdS:O thin films were prepared from a 99.999% CdS target by reactive sputtering in a Ar:O2 (99:1) ambient with different RF power at room temperature. The deposited films were studied by means of XRD, SEM, EDX, Hall Effect and UV-Vis spectrometry. The incorporations of O2 into the films were observed to increase with the decrease of deposition power. The cryatallinity of the films were reduced, whereas the band gaps of the films were increased by the increase of O2 content on the films. The films were found in nano-structured grains with a compact surface. It has been seen that the highest carrier density is observed in the film with O2 at.% 21.10, while the values decreased with the further increase or decrease of O2 content on the films; indicating that specific amount of donor like O2 atoms substitute to the S atoms can improve the carrier density of the CdS:O thin film.

Original languageEnglish
Title of host publicationInternational Conference on Mathematics, Engineering and Industrial Applications, ICoMEIA 2014
PublisherAmerican Institute of Physics Inc.
Volume1660
ISBN (Electronic)9780735413047
DOIs
Publication statusPublished - 15 May 2015
EventInternational Conference on Mathematics, Engineering and Industrial Applications, ICoMEIA 2014 - Penang, Malaysia
Duration: 28 May 201430 May 2014

Other

OtherInternational Conference on Mathematics, Engineering and Industrial Applications, ICoMEIA 2014
CountryMalaysia
CityPenang
Period28/5/1430/5/14

Fingerprint

sputtering
thin films
atoms
Hall effect
substitutes
scanning electron microscopy
room temperature
spectroscopy

Keywords

  • bandgap
  • CdS:O thin film
  • nano-structure
  • reactive sputtering

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Islam, M. A., Rahman, K. S., Haque, F., Rashid, M. J., Akhtaruzzaman, M., Sopian, K., ... Amin, N. (2015). Nanostructured and wide bandgap CdS: O thin films grown by reactive RF sputtering. In International Conference on Mathematics, Engineering and Industrial Applications, ICoMEIA 2014 (Vol. 1660). [070048] American Institute of Physics Inc.. https://doi.org/10.1063/1.4915766

Nanostructured and wide bandgap CdS : O thin films grown by reactive RF sputtering. / Islam, M. A.; Rahman, K. S.; Haque, F.; Rashid, M. J.; Akhtaruzzaman, Md.; Sopian, Kamaruzzaman; Sulaiman, Y.; Amin, Nowshad.

International Conference on Mathematics, Engineering and Industrial Applications, ICoMEIA 2014. Vol. 1660 American Institute of Physics Inc., 2015. 070048.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Islam, MA, Rahman, KS, Haque, F, Rashid, MJ, Akhtaruzzaman, M, Sopian, K, Sulaiman, Y & Amin, N 2015, Nanostructured and wide bandgap CdS: O thin films grown by reactive RF sputtering. in International Conference on Mathematics, Engineering and Industrial Applications, ICoMEIA 2014. vol. 1660, 070048, American Institute of Physics Inc., International Conference on Mathematics, Engineering and Industrial Applications, ICoMEIA 2014, Penang, Malaysia, 28/5/14. https://doi.org/10.1063/1.4915766
Islam MA, Rahman KS, Haque F, Rashid MJ, Akhtaruzzaman M, Sopian K et al. Nanostructured and wide bandgap CdS: O thin films grown by reactive RF sputtering. In International Conference on Mathematics, Engineering and Industrial Applications, ICoMEIA 2014. Vol. 1660. American Institute of Physics Inc. 2015. 070048 https://doi.org/10.1063/1.4915766
Islam, M. A. ; Rahman, K. S. ; Haque, F. ; Rashid, M. J. ; Akhtaruzzaman, Md. ; Sopian, Kamaruzzaman ; Sulaiman, Y. ; Amin, Nowshad. / Nanostructured and wide bandgap CdS : O thin films grown by reactive RF sputtering. International Conference on Mathematics, Engineering and Industrial Applications, ICoMEIA 2014. Vol. 1660 American Institute of Physics Inc., 2015.
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AB - In this study, CdS:O thin films were prepared from a 99.999% CdS target by reactive sputtering in a Ar:O2 (99:1) ambient with different RF power at room temperature. The deposited films were studied by means of XRD, SEM, EDX, Hall Effect and UV-Vis spectrometry. The incorporations of O2 into the films were observed to increase with the decrease of deposition power. The cryatallinity of the films were reduced, whereas the band gaps of the films were increased by the increase of O2 content on the films. The films were found in nano-structured grains with a compact surface. It has been seen that the highest carrier density is observed in the film with O2 at.% 21.10, while the values decreased with the further increase or decrease of O2 content on the films; indicating that specific amount of donor like O2 atoms substitute to the S atoms can improve the carrier density of the CdS:O thin film.

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