Nanoscale fabrication by interferometric lithography

Saleem H. Zaidi, S. R J Brueck

Research output: Chapter in Book/Report/Conference proceedingChapter

4 Citations (Scopus)

Abstract

Interferometric lithography (IL) techniques provide a demonstrated, low-cost, large area nanoscale patterning capability with feature resolution to approximately 50 nm. Combining IL with anisotropic etching (both by reactive-ion etching and by KOH wet etching) and with 3-D oxidation techniques provides a suite of techniques that accesses a broad range of Si nanostructures (as small as 10 nm) over large areas and with good uniformity. Optical characterization includes measurements of reflectivity for a wide range of 1D grating profiles, and Raman scattering characterization of Si nanostructures. Three regimes are found for the Raman scattering: bulk (to linewidths of approximately 200 nm), resonant enhanced (approximately 50 nm linewidths) and asymmetry and splitting (linewidths <20 nm).

Original languageEnglish
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
PublisherSociety of Photo-Optical Instrumentation Engineers
Pages340-343
Number of pages4
Volume3740
Publication statusPublished - 1999
Externally publishedYes
EventProceedings of the 1999 Optical Engineering for Sensing and Nanotechnology (ICOSN '99) - Yokohama, Jpn
Duration: 16 Jun 199918 Jun 1999

Other

OtherProceedings of the 1999 Optical Engineering for Sensing and Nanotechnology (ICOSN '99)
CityYokohama, Jpn
Period16/6/9918/6/99

Fingerprint

Linewidth
Lithography
lithography
etching
Fabrication
fabrication
Raman scattering
Nanostructures
Raman spectra
Anisotropic etching
Wet etching
Reactive ion etching
asymmetry
gratings
reflectance
Oxidation
oxidation
profiles
Costs
ions

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Cite this

Zaidi, S. H., & Brueck, S. R. J. (1999). Nanoscale fabrication by interferometric lithography. In Proceedings of SPIE - The International Society for Optical Engineering (Vol. 3740, pp. 340-343). Society of Photo-Optical Instrumentation Engineers.

Nanoscale fabrication by interferometric lithography. / Zaidi, Saleem H.; Brueck, S. R J.

Proceedings of SPIE - The International Society for Optical Engineering. Vol. 3740 Society of Photo-Optical Instrumentation Engineers, 1999. p. 340-343.

Research output: Chapter in Book/Report/Conference proceedingChapter

Zaidi, SH & Brueck, SRJ 1999, Nanoscale fabrication by interferometric lithography. in Proceedings of SPIE - The International Society for Optical Engineering. vol. 3740, Society of Photo-Optical Instrumentation Engineers, pp. 340-343, Proceedings of the 1999 Optical Engineering for Sensing and Nanotechnology (ICOSN '99), Yokohama, Jpn, 16/6/99.
Zaidi SH, Brueck SRJ. Nanoscale fabrication by interferometric lithography. In Proceedings of SPIE - The International Society for Optical Engineering. Vol. 3740. Society of Photo-Optical Instrumentation Engineers. 1999. p. 340-343
Zaidi, Saleem H. ; Brueck, S. R J. / Nanoscale fabrication by interferometric lithography. Proceedings of SPIE - The International Society for Optical Engineering. Vol. 3740 Society of Photo-Optical Instrumentation Engineers, 1999. pp. 340-343
@inbook{b882d732456c4d4dbb9ef24dd8dacedb,
title = "Nanoscale fabrication by interferometric lithography",
abstract = "Interferometric lithography (IL) techniques provide a demonstrated, low-cost, large area nanoscale patterning capability with feature resolution to approximately 50 nm. Combining IL with anisotropic etching (both by reactive-ion etching and by KOH wet etching) and with 3-D oxidation techniques provides a suite of techniques that accesses a broad range of Si nanostructures (as small as 10 nm) over large areas and with good uniformity. Optical characterization includes measurements of reflectivity for a wide range of 1D grating profiles, and Raman scattering characterization of Si nanostructures. Three regimes are found for the Raman scattering: bulk (to linewidths of approximately 200 nm), resonant enhanced (approximately 50 nm linewidths) and asymmetry and splitting (linewidths <20 nm).",
author = "Zaidi, {Saleem H.} and Brueck, {S. R J}",
year = "1999",
language = "English",
volume = "3740",
pages = "340--343",
booktitle = "Proceedings of SPIE - The International Society for Optical Engineering",
publisher = "Society of Photo-Optical Instrumentation Engineers",

}

TY - CHAP

T1 - Nanoscale fabrication by interferometric lithography

AU - Zaidi, Saleem H.

AU - Brueck, S. R J

PY - 1999

Y1 - 1999

N2 - Interferometric lithography (IL) techniques provide a demonstrated, low-cost, large area nanoscale patterning capability with feature resolution to approximately 50 nm. Combining IL with anisotropic etching (both by reactive-ion etching and by KOH wet etching) and with 3-D oxidation techniques provides a suite of techniques that accesses a broad range of Si nanostructures (as small as 10 nm) over large areas and with good uniformity. Optical characterization includes measurements of reflectivity for a wide range of 1D grating profiles, and Raman scattering characterization of Si nanostructures. Three regimes are found for the Raman scattering: bulk (to linewidths of approximately 200 nm), resonant enhanced (approximately 50 nm linewidths) and asymmetry and splitting (linewidths <20 nm).

AB - Interferometric lithography (IL) techniques provide a demonstrated, low-cost, large area nanoscale patterning capability with feature resolution to approximately 50 nm. Combining IL with anisotropic etching (both by reactive-ion etching and by KOH wet etching) and with 3-D oxidation techniques provides a suite of techniques that accesses a broad range of Si nanostructures (as small as 10 nm) over large areas and with good uniformity. Optical characterization includes measurements of reflectivity for a wide range of 1D grating profiles, and Raman scattering characterization of Si nanostructures. Three regimes are found for the Raman scattering: bulk (to linewidths of approximately 200 nm), resonant enhanced (approximately 50 nm linewidths) and asymmetry and splitting (linewidths <20 nm).

UR - http://www.scopus.com/inward/record.url?scp=0032596989&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032596989&partnerID=8YFLogxK

M3 - Chapter

VL - 3740

SP - 340

EP - 343

BT - Proceedings of SPIE - The International Society for Optical Engineering

PB - Society of Photo-Optical Instrumentation Engineers

ER -