Nanoheteroepitaxy

Nanofabrication route to improved epitaxial growth

D. Zubia, Saleem H. Zaidi, S. D. Hersee, S. R J Brueck

Research output: Contribution to journalArticle

54 Citations (Scopus)

Abstract

Nanoheteroepitaxy (NHE), a heterostructure growth technique, was introduced. The nanostructured substrate parameters affecting the NHE growth are discussed. Interferometric lithography was introduced for large-area substrates for NHE growth. A great reduction in threading defect concentration was found by scanning electron microscopy (SEM) and transmission electron microscopy (TEM) analyses.

Original languageEnglish
Pages (from-to)3514-3520
Number of pages7
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume18
Issue number6
DOIs
Publication statusPublished - Nov 2000
Externally publishedYes

Fingerprint

nanofabrication
Nanotechnology
Epitaxial growth
routes
Substrates
Lithography
Heterojunctions
lithography
Transmission electron microscopy
Defects
transmission electron microscopy
Scanning electron microscopy
scanning electron microscopy
defects

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Nanoheteroepitaxy : Nanofabrication route to improved epitaxial growth. / Zubia, D.; Zaidi, Saleem H.; Hersee, S. D.; Brueck, S. R J.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 18, No. 6, 11.2000, p. 3514-3520.

Research output: Contribution to journalArticle

@article{cdce8a824c7f46a794e7ea0fcc96e448,
title = "Nanoheteroepitaxy: Nanofabrication route to improved epitaxial growth",
abstract = "Nanoheteroepitaxy (NHE), a heterostructure growth technique, was introduced. The nanostructured substrate parameters affecting the NHE growth are discussed. Interferometric lithography was introduced for large-area substrates for NHE growth. A great reduction in threading defect concentration was found by scanning electron microscopy (SEM) and transmission electron microscopy (TEM) analyses.",
author = "D. Zubia and Zaidi, {Saleem H.} and Hersee, {S. D.} and Brueck, {S. R J}",
year = "2000",
month = "11",
doi = "10.1116/1.1321283",
language = "English",
volume = "18",
pages = "3514--3520",
journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",
issn = "1071-1023",
publisher = "AVS Science and Technology Society",
number = "6",

}

TY - JOUR

T1 - Nanoheteroepitaxy

T2 - Nanofabrication route to improved epitaxial growth

AU - Zubia, D.

AU - Zaidi, Saleem H.

AU - Hersee, S. D.

AU - Brueck, S. R J

PY - 2000/11

Y1 - 2000/11

N2 - Nanoheteroepitaxy (NHE), a heterostructure growth technique, was introduced. The nanostructured substrate parameters affecting the NHE growth are discussed. Interferometric lithography was introduced for large-area substrates for NHE growth. A great reduction in threading defect concentration was found by scanning electron microscopy (SEM) and transmission electron microscopy (TEM) analyses.

AB - Nanoheteroepitaxy (NHE), a heterostructure growth technique, was introduced. The nanostructured substrate parameters affecting the NHE growth are discussed. Interferometric lithography was introduced for large-area substrates for NHE growth. A great reduction in threading defect concentration was found by scanning electron microscopy (SEM) and transmission electron microscopy (TEM) analyses.

UR - http://www.scopus.com/inward/record.url?scp=0034318566&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0034318566&partnerID=8YFLogxK

U2 - 10.1116/1.1321283

DO - 10.1116/1.1321283

M3 - Article

VL - 18

SP - 3514

EP - 3520

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

SN - 1071-1023

IS - 6

ER -