Nanoheteroepitaxial growth of GaN on Si by organometallic vapor phase epitaxy

D. Zubia, Saleem H. Zaidi, S. R J Brueck, S. D. Hersee

Research output: Contribution to journalArticle

76 Citations (Scopus)

Abstract

Nanoheteroepitaxy has recently been proposed as a technique for significantly extending the thickness of pseudomorphic growth in mismatched heterostructures. This letter reports the experimental application of nanoheteroepitaxy for the growth of GaN on patterned 〈111〉 oriented silicon-on-insulator substrates by organometallic vapor phase epitaxy. Transmission electron microscopy reveals that the defect concentration decays rapidly away from the heterointerface as predicted by nanoheteroepitaxy theory. The melting point of the nanoscale islands is found to be significantly reduced, enhancing substrate compliance and further reducing the strain energy in the GaN epitaxial layer.

Original languageEnglish
Pages (from-to)858-860
Number of pages3
JournalApplied Physics Letters
Volume76
Issue number7
Publication statusPublished - 14 Feb 2000
Externally publishedYes

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vapor phase epitaxy
melting points
insulators
transmission electron microscopy
defects
silicon
decay
energy

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Nanoheteroepitaxial growth of GaN on Si by organometallic vapor phase epitaxy. / Zubia, D.; Zaidi, Saleem H.; Brueck, S. R J; Hersee, S. D.

In: Applied Physics Letters, Vol. 76, No. 7, 14.02.2000, p. 858-860.

Research output: Contribution to journalArticle

Zubia, D, Zaidi, SH, Brueck, SRJ & Hersee, SD 2000, 'Nanoheteroepitaxial growth of GaN on Si by organometallic vapor phase epitaxy', Applied Physics Letters, vol. 76, no. 7, pp. 858-860.
Zubia, D. ; Zaidi, Saleem H. ; Brueck, S. R J ; Hersee, S. D. / Nanoheteroepitaxial growth of GaN on Si by organometallic vapor phase epitaxy. In: Applied Physics Letters. 2000 ; Vol. 76, No. 7. pp. 858-860.
@article{120fb003bc994574a58bc52881b3a437,
title = "Nanoheteroepitaxial growth of GaN on Si by organometallic vapor phase epitaxy",
abstract = "Nanoheteroepitaxy has recently been proposed as a technique for significantly extending the thickness of pseudomorphic growth in mismatched heterostructures. This letter reports the experimental application of nanoheteroepitaxy for the growth of GaN on patterned 〈111〉 oriented silicon-on-insulator substrates by organometallic vapor phase epitaxy. Transmission electron microscopy reveals that the defect concentration decays rapidly away from the heterointerface as predicted by nanoheteroepitaxy theory. The melting point of the nanoscale islands is found to be significantly reduced, enhancing substrate compliance and further reducing the strain energy in the GaN epitaxial layer.",
author = "D. Zubia and Zaidi, {Saleem H.} and Brueck, {S. R J} and Hersee, {S. D.}",
year = "2000",
month = "2",
day = "14",
language = "English",
volume = "76",
pages = "858--860",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "7",

}

TY - JOUR

T1 - Nanoheteroepitaxial growth of GaN on Si by organometallic vapor phase epitaxy

AU - Zubia, D.

AU - Zaidi, Saleem H.

AU - Brueck, S. R J

AU - Hersee, S. D.

PY - 2000/2/14

Y1 - 2000/2/14

N2 - Nanoheteroepitaxy has recently been proposed as a technique for significantly extending the thickness of pseudomorphic growth in mismatched heterostructures. This letter reports the experimental application of nanoheteroepitaxy for the growth of GaN on patterned 〈111〉 oriented silicon-on-insulator substrates by organometallic vapor phase epitaxy. Transmission electron microscopy reveals that the defect concentration decays rapidly away from the heterointerface as predicted by nanoheteroepitaxy theory. The melting point of the nanoscale islands is found to be significantly reduced, enhancing substrate compliance and further reducing the strain energy in the GaN epitaxial layer.

AB - Nanoheteroepitaxy has recently been proposed as a technique for significantly extending the thickness of pseudomorphic growth in mismatched heterostructures. This letter reports the experimental application of nanoheteroepitaxy for the growth of GaN on patterned 〈111〉 oriented silicon-on-insulator substrates by organometallic vapor phase epitaxy. Transmission electron microscopy reveals that the defect concentration decays rapidly away from the heterointerface as predicted by nanoheteroepitaxy theory. The melting point of the nanoscale islands is found to be significantly reduced, enhancing substrate compliance and further reducing the strain energy in the GaN epitaxial layer.

UR - http://www.scopus.com/inward/record.url?scp=0001057273&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0001057273&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0001057273

VL - 76

SP - 858

EP - 860

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 7

ER -