Multiple exposure interferometric lithography

Saleem H. Zaidi, S. R.J. Brueck

Research output: Contribution to journalConference article

9 Citations (Scopus)

Abstract

Interferometric lithography provides a simple, inexpensive technique for the fabrication oflarge areas of extreme sub-tm structures. Using a 364 nm Ar-ion laser source, gratings with periods to 0.2μm and CDs as small as 30 nm are reported. Multiple exposure interferometric lithography provides the all important extension to 2-D structures. Importantly, pairwise exposures maintain the effectively infmite depth-of-field while still allowing complex structures. Mix and match with conventional optical lithography provides additional flexibility. An interdigitated structure suitable for high-speed photodetectors and conductive particle sensors is an example.

Original languageEnglish
Pages (from-to)869-875
Number of pages7
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume2197
DOIs
Publication statusPublished - 17 May 1994
EventOptical/Laser Microlithography VII 1994 - San Jose, United States
Duration: 27 Feb 19944 Mar 1994

Fingerprint

Lithography
lithography
Photolithography
Photodetectors
Optical Lithography
Depth of Field
Photodetector
Ions
Complex Structure
Fabrication
Gratings
photometers
Lasers
Pairwise
Sensors
flexibility
Extremes
High Speed
Flexibility
high speed

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Cite this

Multiple exposure interferometric lithography. / Zaidi, Saleem H.; Brueck, S. R.J.

In: Proceedings of SPIE - The International Society for Optical Engineering, Vol. 2197, 17.05.1994, p. 869-875.

Research output: Contribution to journalConference article

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