MQW design parameter variation in a 1.5 μm wavelength InP-based LW-VCSEL

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6 Citations (Scopus)

Abstract

Long-wavelength vertical-cavity surface-emitting lasers (LW-VCSEL) have profound advantages compared to traditional edge-emitting lasers and its commercialization is gaining momentum as the local and access network in optical communication system expands. In this paper, we present the design parameter variations of multi quantum wells (MQW) in the active region of an InP-based long-wavelength vertical-cavity surface emitting laser (LW-VCSEL) utilizing an air-post design. The MQW and barrier thickness were varied and their effect on the device threshold current, optical power, gain, lattice temperature, peak wavelength and reflectivity were analysed and presented. Quantum well thickness of 5.5 nm and barrier thickness of 8 nm gives the optimum threshold current of 0.579 mA, optical power output of 4.2 mW, modal gain of 27 cm-1, lattice temperature of 310.6 K and peak wavelength of 1.562 μm.

Original languageEnglish
Pages (from-to)437-446
Number of pages10
JournalWSEAS Transactions on Electronics
Volume5
Issue number11
Publication statusPublished - 2008

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Surface emitting lasers
Semiconductor quantum wells
Wavelength
Optical communication
Momentum
Communication systems
Temperature
Lasers
Air

Keywords

  • Air-post
  • Gain
  • InGaAsP
  • MQW
  • Threshold current
  • VCSEL

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

@article{63565310410744349c54620372361923,
title = "MQW design parameter variation in a 1.5 μm wavelength InP-based LW-VCSEL",
abstract = "Long-wavelength vertical-cavity surface-emitting lasers (LW-VCSEL) have profound advantages compared to traditional edge-emitting lasers and its commercialization is gaining momentum as the local and access network in optical communication system expands. In this paper, we present the design parameter variations of multi quantum wells (MQW) in the active region of an InP-based long-wavelength vertical-cavity surface emitting laser (LW-VCSEL) utilizing an air-post design. The MQW and barrier thickness were varied and their effect on the device threshold current, optical power, gain, lattice temperature, peak wavelength and reflectivity were analysed and presented. Quantum well thickness of 5.5 nm and barrier thickness of 8 nm gives the optimum threshold current of 0.579 mA, optical power output of 4.2 mW, modal gain of 27 cm-1, lattice temperature of 310.6 K and peak wavelength of 1.562 μm.",
keywords = "Air-post, Gain, InGaAsP, MQW, Threshold current, VCSEL",
author = "K. Kumarajah and {N V Visvanathan}, {P. Susthitha Menon} and Mahamod Ismail and {Yeop Majlis}, Burhanuddin and S. Shaari",
year = "2008",
language = "English",
volume = "5",
pages = "437--446",
journal = "WSEAS Transactions on Electronics",
issn = "1109-9445",
number = "11",

}

TY - JOUR

T1 - MQW design parameter variation in a 1.5 μm wavelength InP-based LW-VCSEL

AU - Kumarajah, K.

AU - N V Visvanathan, P. Susthitha Menon

AU - Ismail, Mahamod

AU - Yeop Majlis, Burhanuddin

AU - Shaari, S.

PY - 2008

Y1 - 2008

N2 - Long-wavelength vertical-cavity surface-emitting lasers (LW-VCSEL) have profound advantages compared to traditional edge-emitting lasers and its commercialization is gaining momentum as the local and access network in optical communication system expands. In this paper, we present the design parameter variations of multi quantum wells (MQW) in the active region of an InP-based long-wavelength vertical-cavity surface emitting laser (LW-VCSEL) utilizing an air-post design. The MQW and barrier thickness were varied and their effect on the device threshold current, optical power, gain, lattice temperature, peak wavelength and reflectivity were analysed and presented. Quantum well thickness of 5.5 nm and barrier thickness of 8 nm gives the optimum threshold current of 0.579 mA, optical power output of 4.2 mW, modal gain of 27 cm-1, lattice temperature of 310.6 K and peak wavelength of 1.562 μm.

AB - Long-wavelength vertical-cavity surface-emitting lasers (LW-VCSEL) have profound advantages compared to traditional edge-emitting lasers and its commercialization is gaining momentum as the local and access network in optical communication system expands. In this paper, we present the design parameter variations of multi quantum wells (MQW) in the active region of an InP-based long-wavelength vertical-cavity surface emitting laser (LW-VCSEL) utilizing an air-post design. The MQW and barrier thickness were varied and their effect on the device threshold current, optical power, gain, lattice temperature, peak wavelength and reflectivity were analysed and presented. Quantum well thickness of 5.5 nm and barrier thickness of 8 nm gives the optimum threshold current of 0.579 mA, optical power output of 4.2 mW, modal gain of 27 cm-1, lattice temperature of 310.6 K and peak wavelength of 1.562 μm.

KW - Air-post

KW - Gain

KW - InGaAsP

KW - MQW

KW - Threshold current

KW - VCSEL

UR - http://www.scopus.com/inward/record.url?scp=70349560858&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=70349560858&partnerID=8YFLogxK

M3 - Article

VL - 5

SP - 437

EP - 446

JO - WSEAS Transactions on Electronics

JF - WSEAS Transactions on Electronics

SN - 1109-9445

IS - 11

ER -