Abstract
Monte Carlo simulations of the energy response of a conventionally packaged single metal-oxide field effect transistors (MOSFET) detector were performed with the goal of improving MOSFET energy dependence for personal accident or military dosimetry. The MOSFET detector packaging was optimised. Two different 'drop-in' design packages for a single MOSFET detector were modelled and optimised using the GEANT4 Monte Carlo toolkit. Absorbed photon dose simulations of the MOSFET dosemeter placed in free-air response, corresponding to the absorbed doses at depths of 0.07 mm (Dw(0.07)) and 10 mm (Dw(10)) in a water equivalent phantom of size 30 × 30 × 30 cm3 for photon energies of 0.015-2 MeV were performed. Energy dependence was reduced to within ±60 % for photon energies 0.06-2 MeV for both Dw(0.07) and Dw(10). Variations in the response for photon energies of 15-60 keV were 200 and 330% for Dw(0.07) and Dw(10), respectively. The obtained energy dependence was reduced compared with that for conventionally packaged MOSFET detectors, which usually exhibit a 500-700% over-response when used in free-air geometry.
| Original language | English |
|---|---|
| Article number | ncq144 |
| Pages (from-to) | 10-17 |
| Number of pages | 8 |
| Journal | Radiation Protection Dosimetry |
| Volume | 141 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 11 May 2010 |
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ASJC Scopus subject areas
- Radiology Nuclear Medicine and imaging
- Radiological and Ultrasound Technology
- Radiation
- Public Health, Environmental and Occupational Health
Cite this
Monte Carlo study of mosfet packaging, optimised for improved energy response : Single mosfet filtration. / Othman, Mohd. Amir Radhi; Cutajar, D. L.; Hardcastle, N.; Guatelli, S.; Rosenfeld, A. B.
In: Radiation Protection Dosimetry, Vol. 141, No. 1, ncq144, 11.05.2010, p. 10-17.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Monte Carlo study of mosfet packaging, optimised for improved energy response
T2 - Single mosfet filtration
AU - Othman, Mohd. Amir Radhi
AU - Cutajar, D. L.
AU - Hardcastle, N.
AU - Guatelli, S.
AU - Rosenfeld, A. B.
PY - 2010/5/11
Y1 - 2010/5/11
N2 - Monte Carlo simulations of the energy response of a conventionally packaged single metal-oxide field effect transistors (MOSFET) detector were performed with the goal of improving MOSFET energy dependence for personal accident or military dosimetry. The MOSFET detector packaging was optimised. Two different 'drop-in' design packages for a single MOSFET detector were modelled and optimised using the GEANT4 Monte Carlo toolkit. Absorbed photon dose simulations of the MOSFET dosemeter placed in free-air response, corresponding to the absorbed doses at depths of 0.07 mm (Dw(0.07)) and 10 mm (Dw(10)) in a water equivalent phantom of size 30 × 30 × 30 cm3 for photon energies of 0.015-2 MeV were performed. Energy dependence was reduced to within ±60 % for photon energies 0.06-2 MeV for both Dw(0.07) and Dw(10). Variations in the response for photon energies of 15-60 keV were 200 and 330% for Dw(0.07) and Dw(10), respectively. The obtained energy dependence was reduced compared with that for conventionally packaged MOSFET detectors, which usually exhibit a 500-700% over-response when used in free-air geometry.
AB - Monte Carlo simulations of the energy response of a conventionally packaged single metal-oxide field effect transistors (MOSFET) detector were performed with the goal of improving MOSFET energy dependence for personal accident or military dosimetry. The MOSFET detector packaging was optimised. Two different 'drop-in' design packages for a single MOSFET detector were modelled and optimised using the GEANT4 Monte Carlo toolkit. Absorbed photon dose simulations of the MOSFET dosemeter placed in free-air response, corresponding to the absorbed doses at depths of 0.07 mm (Dw(0.07)) and 10 mm (Dw(10)) in a water equivalent phantom of size 30 × 30 × 30 cm3 for photon energies of 0.015-2 MeV were performed. Energy dependence was reduced to within ±60 % for photon energies 0.06-2 MeV for both Dw(0.07) and Dw(10). Variations in the response for photon energies of 15-60 keV were 200 and 330% for Dw(0.07) and Dw(10), respectively. The obtained energy dependence was reduced compared with that for conventionally packaged MOSFET detectors, which usually exhibit a 500-700% over-response when used in free-air geometry.
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UR - http://www.scopus.com/inward/citedby.url?scp=77955972287&partnerID=8YFLogxK
U2 - 10.1093/rpd/ncq144
DO - 10.1093/rpd/ncq144
M3 - Article
C2 - 20460400
AN - SCOPUS:77955972287
VL - 141
SP - 10
EP - 17
JO - Radiation Protection Dosimetry
JF - Radiation Protection Dosimetry
SN - 0144-8420
IS - 1
M1 - ncq144
ER -