Monte Carlo simulation of surface annealing before epitaxial growth

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Presented is a molecular beam epitaxial pre-growth-annealing simulation. Simulation done using Monte Carlo method by taking consideration of GaAs decomposition, As desorption and absorption process from the surface. Surface roughness information can be deducted from the percentages of step-edge-site density. It is compared to the specular reflected beam from Reflected High Energy Electron Diffraction (RHEED). Good agreement with the experimental data shows the correctness of the simulation model.

Original languageEnglish
Title of host publicationIEEE International Conference on Semiconductor Electronics, Proceedings, ICSE
Pages1024-1027
Number of pages4
DOIs
Publication statusPublished - 2006
Event2006 IEEE International Conference on Semiconductor Electronics, ICSE 2006 - Kuala Lumpur
Duration: 29 Nov 20061 Dec 2006

Other

Other2006 IEEE International Conference on Semiconductor Electronics, ICSE 2006
CityKuala Lumpur
Period29/11/061/12/06

Fingerprint

High energy electron diffraction
Molecular beams
Epitaxial growth
Desorption
Monte Carlo methods
Surface roughness
Annealing
Decomposition
Monte Carlo simulation

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Dee, C. F., & Yeop Majlis, B. (2006). Monte Carlo simulation of surface annealing before epitaxial growth. In IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE (pp. 1024-1027). [4266777] https://doi.org/10.1109/SMELEC.2006.380794

Monte Carlo simulation of surface annealing before epitaxial growth. / Dee, Chang Fu; Yeop Majlis, Burhanuddin.

IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. 2006. p. 1024-1027 4266777.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Dee, CF & Yeop Majlis, B 2006, Monte Carlo simulation of surface annealing before epitaxial growth. in IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE., 4266777, pp. 1024-1027, 2006 IEEE International Conference on Semiconductor Electronics, ICSE 2006, Kuala Lumpur, 29/11/06. https://doi.org/10.1109/SMELEC.2006.380794
Dee CF, Yeop Majlis B. Monte Carlo simulation of surface annealing before epitaxial growth. In IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. 2006. p. 1024-1027. 4266777 https://doi.org/10.1109/SMELEC.2006.380794
Dee, Chang Fu ; Yeop Majlis, Burhanuddin. / Monte Carlo simulation of surface annealing before epitaxial growth. IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. 2006. pp. 1024-1027
@inproceedings{49922096899642db93ac4169ce077375,
title = "Monte Carlo simulation of surface annealing before epitaxial growth",
abstract = "Presented is a molecular beam epitaxial pre-growth-annealing simulation. Simulation done using Monte Carlo method by taking consideration of GaAs decomposition, As desorption and absorption process from the surface. Surface roughness information can be deducted from the percentages of step-edge-site density. It is compared to the specular reflected beam from Reflected High Energy Electron Diffraction (RHEED). Good agreement with the experimental data shows the correctness of the simulation model.",
author = "Dee, {Chang Fu} and {Yeop Majlis}, Burhanuddin",
year = "2006",
doi = "10.1109/SMELEC.2006.380794",
language = "English",
isbn = "0780397312",
pages = "1024--1027",
booktitle = "IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE",

}

TY - GEN

T1 - Monte Carlo simulation of surface annealing before epitaxial growth

AU - Dee, Chang Fu

AU - Yeop Majlis, Burhanuddin

PY - 2006

Y1 - 2006

N2 - Presented is a molecular beam epitaxial pre-growth-annealing simulation. Simulation done using Monte Carlo method by taking consideration of GaAs decomposition, As desorption and absorption process from the surface. Surface roughness information can be deducted from the percentages of step-edge-site density. It is compared to the specular reflected beam from Reflected High Energy Electron Diffraction (RHEED). Good agreement with the experimental data shows the correctness of the simulation model.

AB - Presented is a molecular beam epitaxial pre-growth-annealing simulation. Simulation done using Monte Carlo method by taking consideration of GaAs decomposition, As desorption and absorption process from the surface. Surface roughness information can be deducted from the percentages of step-edge-site density. It is compared to the specular reflected beam from Reflected High Energy Electron Diffraction (RHEED). Good agreement with the experimental data shows the correctness of the simulation model.

UR - http://www.scopus.com/inward/record.url?scp=35148886343&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=35148886343&partnerID=8YFLogxK

U2 - 10.1109/SMELEC.2006.380794

DO - 10.1109/SMELEC.2006.380794

M3 - Conference contribution

SN - 0780397312

SN - 9780780397316

SP - 1024

EP - 1027

BT - IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE

ER -