Molecular beam epitaxy growth of GaAsBi using As2 and As 4

Robert D. Richards, Faebian Bastiman, Christopher J. Hunter, Danuta F. Mendes, Abdul Rahman Mohmad, John S. Roberts, John P R David

Research output: Contribution to journalArticle

35 Citations (Scopus)

Abstract

100 nm thick GaAsBi layers were grown at a range of temperatures using both As2 and As4. Measurements of Bi incorporation based on room temperature photoluminescence spectra indicate that the growth temperature dependence of Bi incorporation is the same for both As species and is invariant with respect to Bi flux; however, Bi incorporation saturates when the growth temperature is low enough for the Bi incorporation coefficient to reach unity. The As:Ga atomic flux ratios allowing significant Bi incorporation are coincident for both As species upon accounting for desorption of 50% of the incident As4 atoms during GaAs growth. The Bi reconstruction lifetime at 415 C was measured under overpressures of both As species and under vacuum. The lifetime is significantly longer than the monolayer growth time used in this work; however, results do show that As2 is more aggressive at displacing Bi from a static surface than As4. The photoluminescence intensities of the samples grown in this work vary with Bi incorporation in accordance with current literature and appear to be independent of As species.

Original languageEnglish
Pages (from-to)120-124
Number of pages5
JournalJournal of Crystal Growth
Volume390
DOIs
Publication statusPublished - 15 Mar 2014

Fingerprint

Growth temperature
Molecular beam epitaxy
Photoluminescence
molecular beam epitaxy
Fluxes
Monolayers
Desorption
Vacuum
photoluminescence
life (durability)
Atoms
Temperature
overpressure
unity
desorption
vacuum
temperature dependence
room temperature
coefficients
atoms

Keywords

  • A1. Growth models
  • A3. Molecular beam epitaxy
  • B1. Bismuth compounds
  • B2. Semiconducting gallium compounds

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Materials Chemistry
  • Inorganic Chemistry

Cite this

Richards, R. D., Bastiman, F., Hunter, C. J., Mendes, D. F., Mohmad, A. R., Roberts, J. S., & David, J. P. R. (2014). Molecular beam epitaxy growth of GaAsBi using As2 and As 4 Journal of Crystal Growth, 390, 120-124. https://doi.org/10.1016/j.jcrysgro.2013.12.008

Molecular beam epitaxy growth of GaAsBi using As2 and As 4 . / Richards, Robert D.; Bastiman, Faebian; Hunter, Christopher J.; Mendes, Danuta F.; Mohmad, Abdul Rahman; Roberts, John S.; David, John P R.

In: Journal of Crystal Growth, Vol. 390, 15.03.2014, p. 120-124.

Research output: Contribution to journalArticle

Richards, RD, Bastiman, F, Hunter, CJ, Mendes, DF, Mohmad, AR, Roberts, JS & David, JPR 2014, 'Molecular beam epitaxy growth of GaAsBi using As2 and As 4 ', Journal of Crystal Growth, vol. 390, pp. 120-124. https://doi.org/10.1016/j.jcrysgro.2013.12.008
Richards, Robert D. ; Bastiman, Faebian ; Hunter, Christopher J. ; Mendes, Danuta F. ; Mohmad, Abdul Rahman ; Roberts, John S. ; David, John P R. / Molecular beam epitaxy growth of GaAsBi using As2 and As 4 In: Journal of Crystal Growth. 2014 ; Vol. 390. pp. 120-124.
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