Modelling the retention of ionic components for different nanofiltration membranes

Johan Schaep, Carlo Vandecasteele, Abdul Wahab Mohammad, W. Richard Bowen

Research output: Contribution to journalArticle

169 Citations (Scopus)

Abstract

Retention measurements with salt solutions of NaCl, Na2SO4, MgCl2, MgSO4 and LaCl3 were carried out for four commercial nanofiltration membranes. The retention of ionic components was analyzed by the Donnan-steric partitioning pore model (DSPM), that describes the solute transport through a membrane using the extended Nernst-Planck equation. The analysis made it possible to evaluate the membrane charge density, which showed that the charge density is not constant but depends very much on the salt and its concentration; this phenomenon was found for all membranes and is attributed to ion adsorption on the membrane material. For magnesium and lanthanum salts this could lead to a change in the sign of the membrane charge from a negative to a positive value. Theoretical calculations strengthened this finding.

Original languageEnglish
Pages (from-to)169-179
Number of pages11
JournalSeparation and Purification Technology
Volume22-23
DOIs
Publication statusPublished - 1 Mar 2001

Fingerprint

Nanofiltration membranes
Membranes
Salts
Charge density
Solute transport
Lanthanum
Magnesium Chloride
Magnesium
Ions
Adsorption

Keywords

  • Membrane charge
  • Nanofiltration
  • Nernst-Planck equation
  • Salt solutions
  • Size effect

ASJC Scopus subject areas

  • Filtration and Separation

Cite this

Modelling the retention of ionic components for different nanofiltration membranes. / Schaep, Johan; Vandecasteele, Carlo; Mohammad, Abdul Wahab; Richard Bowen, W.

In: Separation and Purification Technology, Vol. 22-23, 01.03.2001, p. 169-179.

Research output: Contribution to journalArticle

Schaep, Johan ; Vandecasteele, Carlo ; Mohammad, Abdul Wahab ; Richard Bowen, W. / Modelling the retention of ionic components for different nanofiltration membranes. In: Separation and Purification Technology. 2001 ; Vol. 22-23. pp. 169-179.
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