Modelling of the current-voltage characteristics of a carbon nano tube field effect transistor

Mohammad Taghi Ahmadi, Javad Karamdel, Razali Ismail, Chang Fu Dee, Burhanuddin Yeop Majlis

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

Working on carbon nanotube field effect transistors (CNTFETs) involving the skill to treat electronic devices at the molecular scale. Nanotubes are being considered as the best candidates for highspeed applications. The charge transport in CNTs is controlled by mobility and saturation velocity. It has also been shown that the high mobility does not always lead to higher carrier velocity. In the high electric field, velocity vectors are changed from randomness to streamline. Velocity approach is applied to the modelling of the current-voltage characteristic of a carbon nanotube field effect transistor. According to the simulation results, in the absence of the quantum capacitance, the short channel effects are arising. However it is foreseeable that if the quantum capacitance takes into consideration, this effect can be improved.

Original languageEnglish
Title of host publicationIEEE International Conference on Semiconductor Electronics, Proceedings, ICSE
Pages576-580
Number of pages5
DOIs
Publication statusPublished - 2008
Event2008 IEEE International Conference on Semiconductor Electronics, ICSE 2008 - Johor Bahru, Johor
Duration: 25 Nov 200827 Nov 2008

Other

Other2008 IEEE International Conference on Semiconductor Electronics, ICSE 2008
CityJohor Bahru, Johor
Period25/11/0827/11/08

Fingerprint

Carbon nanotube field effect transistors
Current voltage characteristics
Capacitance
Nanotubes
Charge transfer
Electric fields

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Ahmadi, M. T., Karamdel, J., Ismail, R., Dee, C. F., & Yeop Majlis, B. (2008). Modelling of the current-voltage characteristics of a carbon nano tube field effect transistor. In IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE (pp. 576-580). [4770391] https://doi.org/10.1109/SMELEC.2008.4770391

Modelling of the current-voltage characteristics of a carbon nano tube field effect transistor. / Ahmadi, Mohammad Taghi; Karamdel, Javad; Ismail, Razali; Dee, Chang Fu; Yeop Majlis, Burhanuddin.

IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. 2008. p. 576-580 4770391.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Ahmadi, MT, Karamdel, J, Ismail, R, Dee, CF & Yeop Majlis, B 2008, Modelling of the current-voltage characteristics of a carbon nano tube field effect transistor. in IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE., 4770391, pp. 576-580, 2008 IEEE International Conference on Semiconductor Electronics, ICSE 2008, Johor Bahru, Johor, 25/11/08. https://doi.org/10.1109/SMELEC.2008.4770391
Ahmadi MT, Karamdel J, Ismail R, Dee CF, Yeop Majlis B. Modelling of the current-voltage characteristics of a carbon nano tube field effect transistor. In IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. 2008. p. 576-580. 4770391 https://doi.org/10.1109/SMELEC.2008.4770391
Ahmadi, Mohammad Taghi ; Karamdel, Javad ; Ismail, Razali ; Dee, Chang Fu ; Yeop Majlis, Burhanuddin. / Modelling of the current-voltage characteristics of a carbon nano tube field effect transistor. IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. 2008. pp. 576-580
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