Modelling of 2-D Gallium Nitride (GaN) photonic crystal

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

This paper presents the simulation of a photonic crystal (PhC) cavity in low index contrast materials- Gallium Nitride on the sapphire substrate using two-dimensional (2D) Finite Difference Time Domain method (FDTD). We have performed the simulation based on H1 PhC configurations with the variation of lattice constant. We have obtained the quality factor of approximately 2200 and 1700 at the wavelength in the range of 486 and 483 nm respectively, which are suitable for operation of the blue laser. This configuration will be used as a basic building block for Lab-on-Chip (LoC) biosensors.

Original languageEnglish
Title of host publication2016 IEEE International Conference on Semiconductor Electronics, ICSE 2016 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages54-56
Number of pages3
Volume2016-September
ISBN (Electronic)9781509023837
DOIs
Publication statusPublished - 21 Sep 2016
Event12th IEEE International Conference on Semiconductor Electronics, ICSE 2016 - Bangsar, Kuala Lumpur, Malaysia
Duration: 17 Aug 201619 Aug 2016

Other

Other12th IEEE International Conference on Semiconductor Electronics, ICSE 2016
CountryMalaysia
CityBangsar, Kuala Lumpur
Period17/8/1619/8/16

Fingerprint

Gallium nitride
Photonic crystals
Aluminum Oxide
Finite difference time domain method
Biosensors
Sapphire
Contrast Media
Lattice constants
Wavelength
Lasers
Substrates
gallium nitride

Keywords

  • GaN
  • Photonic crystal
  • Q factor

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Zamani, N. D. M., Ahmad Rifqi, M. Z., & Yeop Majlis, B. (2016). Modelling of 2-D Gallium Nitride (GaN) photonic crystal. In 2016 IEEE International Conference on Semiconductor Electronics, ICSE 2016 - Proceedings (Vol. 2016-September, pp. 54-56). [7573589] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SMELEC.2016.7573589

Modelling of 2-D Gallium Nitride (GaN) photonic crystal. / Zamani, Nur Dalila Mohd; Ahmad Rifqi, Md Zain; Yeop Majlis, Burhanuddin.

2016 IEEE International Conference on Semiconductor Electronics, ICSE 2016 - Proceedings. Vol. 2016-September Institute of Electrical and Electronics Engineers Inc., 2016. p. 54-56 7573589.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Zamani, NDM, Ahmad Rifqi, MZ & Yeop Majlis, B 2016, Modelling of 2-D Gallium Nitride (GaN) photonic crystal. in 2016 IEEE International Conference on Semiconductor Electronics, ICSE 2016 - Proceedings. vol. 2016-September, 7573589, Institute of Electrical and Electronics Engineers Inc., pp. 54-56, 12th IEEE International Conference on Semiconductor Electronics, ICSE 2016, Bangsar, Kuala Lumpur, Malaysia, 17/8/16. https://doi.org/10.1109/SMELEC.2016.7573589
Zamani NDM, Ahmad Rifqi MZ, Yeop Majlis B. Modelling of 2-D Gallium Nitride (GaN) photonic crystal. In 2016 IEEE International Conference on Semiconductor Electronics, ICSE 2016 - Proceedings. Vol. 2016-September. Institute of Electrical and Electronics Engineers Inc. 2016. p. 54-56. 7573589 https://doi.org/10.1109/SMELEC.2016.7573589
Zamani, Nur Dalila Mohd ; Ahmad Rifqi, Md Zain ; Yeop Majlis, Burhanuddin. / Modelling of 2-D Gallium Nitride (GaN) photonic crystal. 2016 IEEE International Conference on Semiconductor Electronics, ICSE 2016 - Proceedings. Vol. 2016-September Institute of Electrical and Electronics Engineers Inc., 2016. pp. 54-56
@inproceedings{34c588e800c64fe8a3972ef833538612,
title = "Modelling of 2-D Gallium Nitride (GaN) photonic crystal",
abstract = "This paper presents the simulation of a photonic crystal (PhC) cavity in low index contrast materials- Gallium Nitride on the sapphire substrate using two-dimensional (2D) Finite Difference Time Domain method (FDTD). We have performed the simulation based on H1 PhC configurations with the variation of lattice constant. We have obtained the quality factor of approximately 2200 and 1700 at the wavelength in the range of 486 and 483 nm respectively, which are suitable for operation of the blue laser. This configuration will be used as a basic building block for Lab-on-Chip (LoC) biosensors.",
keywords = "GaN, Photonic crystal, Q factor",
author = "Zamani, {Nur Dalila Mohd} and {Ahmad Rifqi}, {Md Zain} and {Yeop Majlis}, Burhanuddin",
year = "2016",
month = "9",
day = "21",
doi = "10.1109/SMELEC.2016.7573589",
language = "English",
volume = "2016-September",
pages = "54--56",
booktitle = "2016 IEEE International Conference on Semiconductor Electronics, ICSE 2016 - Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - GEN

T1 - Modelling of 2-D Gallium Nitride (GaN) photonic crystal

AU - Zamani, Nur Dalila Mohd

AU - Ahmad Rifqi, Md Zain

AU - Yeop Majlis, Burhanuddin

PY - 2016/9/21

Y1 - 2016/9/21

N2 - This paper presents the simulation of a photonic crystal (PhC) cavity in low index contrast materials- Gallium Nitride on the sapphire substrate using two-dimensional (2D) Finite Difference Time Domain method (FDTD). We have performed the simulation based on H1 PhC configurations with the variation of lattice constant. We have obtained the quality factor of approximately 2200 and 1700 at the wavelength in the range of 486 and 483 nm respectively, which are suitable for operation of the blue laser. This configuration will be used as a basic building block for Lab-on-Chip (LoC) biosensors.

AB - This paper presents the simulation of a photonic crystal (PhC) cavity in low index contrast materials- Gallium Nitride on the sapphire substrate using two-dimensional (2D) Finite Difference Time Domain method (FDTD). We have performed the simulation based on H1 PhC configurations with the variation of lattice constant. We have obtained the quality factor of approximately 2200 and 1700 at the wavelength in the range of 486 and 483 nm respectively, which are suitable for operation of the blue laser. This configuration will be used as a basic building block for Lab-on-Chip (LoC) biosensors.

KW - GaN

KW - Photonic crystal

KW - Q factor

UR - http://www.scopus.com/inward/record.url?scp=84990960663&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84990960663&partnerID=8YFLogxK

U2 - 10.1109/SMELEC.2016.7573589

DO - 10.1109/SMELEC.2016.7573589

M3 - Conference contribution

AN - SCOPUS:84990960663

VL - 2016-September

SP - 54

EP - 56

BT - 2016 IEEE International Conference on Semiconductor Electronics, ICSE 2016 - Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

ER -