Modeling the elastic fields in epitaxially grown multilayers

Ganesh Vanamu, Tariq A. Khraishi, Abhaya K. Datye, Saleem H. Zaidi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A model was developed to calculate the elastic fields, including strain energy density, in multilayers grown epitaxially on a planar substrate. This model works well for compliant and non-compliant substrates. In particular we illustrate the model for four layer heterostructure and apply it for graded Ge (Si xGe 1-x) grown on a planar silicon substrate. Using the equations for static equilibrium and Hooke's law for isotropic materials under a plane stress condition, the elastic fields associated with each layer were calculated. The strain partitioning in this model reduces to the limiting case of a two-layer structure available in the literature. As it turns out here, strain partitioning is a function of the bulk unstrained lattice parameters, elastic constants and thicknesses of the layers. The model was qualitatively verified by comparing the strain energy density with the dislocation density away from a relatively thick substrate. This model helps shed some light on the factors important in achieving defect free multilayers for optoelectronic devices.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium Proceedings
EditorsP.M. Anderson, T. Foecke, A. Misra, R.E. Rudd
Pages37-42
Number of pages6
Volume821
Publication statusPublished - 2004
Externally publishedYes
EventNanoscale Materials and Modeling - Relations Among Processing, Microstructure and Mechanical Properties - San Francisco, CA, United States
Duration: 13 Apr 200416 Apr 2004

Other

OtherNanoscale Materials and Modeling - Relations Among Processing, Microstructure and Mechanical Properties
CountryUnited States
CitySan Francisco, CA
Period13/4/0416/4/04

Fingerprint

Multilayers
Substrates
Strain energy
Elastic constants
Silicon
Optoelectronic devices
Lattice constants
Heterojunctions
Defects

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Vanamu, G., Khraishi, T. A., Datye, A. K., & Zaidi, S. H. (2004). Modeling the elastic fields in epitaxially grown multilayers. In P. M. Anderson, T. Foecke, A. Misra, & R. E. Rudd (Eds.), Materials Research Society Symposium Proceedings (Vol. 821, pp. 37-42). [P2.10]

Modeling the elastic fields in epitaxially grown multilayers. / Vanamu, Ganesh; Khraishi, Tariq A.; Datye, Abhaya K.; Zaidi, Saleem H.

Materials Research Society Symposium Proceedings. ed. / P.M. Anderson; T. Foecke; A. Misra; R.E. Rudd. Vol. 821 2004. p. 37-42 P2.10.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Vanamu, G, Khraishi, TA, Datye, AK & Zaidi, SH 2004, Modeling the elastic fields in epitaxially grown multilayers. in PM Anderson, T Foecke, A Misra & RE Rudd (eds), Materials Research Society Symposium Proceedings. vol. 821, P2.10, pp. 37-42, Nanoscale Materials and Modeling - Relations Among Processing, Microstructure and Mechanical Properties, San Francisco, CA, United States, 13/4/04.
Vanamu G, Khraishi TA, Datye AK, Zaidi SH. Modeling the elastic fields in epitaxially grown multilayers. In Anderson PM, Foecke T, Misra A, Rudd RE, editors, Materials Research Society Symposium Proceedings. Vol. 821. 2004. p. 37-42. P2.10
Vanamu, Ganesh ; Khraishi, Tariq A. ; Datye, Abhaya K. ; Zaidi, Saleem H. / Modeling the elastic fields in epitaxially grown multilayers. Materials Research Society Symposium Proceedings. editor / P.M. Anderson ; T. Foecke ; A. Misra ; R.E. Rudd. Vol. 821 2004. pp. 37-42
@inproceedings{794c79fd3c134b1db172aac3cafbcc32,
title = "Modeling the elastic fields in epitaxially grown multilayers",
abstract = "A model was developed to calculate the elastic fields, including strain energy density, in multilayers grown epitaxially on a planar substrate. This model works well for compliant and non-compliant substrates. In particular we illustrate the model for four layer heterostructure and apply it for graded Ge (Si xGe 1-x) grown on a planar silicon substrate. Using the equations for static equilibrium and Hooke's law for isotropic materials under a plane stress condition, the elastic fields associated with each layer were calculated. The strain partitioning in this model reduces to the limiting case of a two-layer structure available in the literature. As it turns out here, strain partitioning is a function of the bulk unstrained lattice parameters, elastic constants and thicknesses of the layers. The model was qualitatively verified by comparing the strain energy density with the dislocation density away from a relatively thick substrate. This model helps shed some light on the factors important in achieving defect free multilayers for optoelectronic devices.",
author = "Ganesh Vanamu and Khraishi, {Tariq A.} and Datye, {Abhaya K.} and Zaidi, {Saleem H.}",
year = "2004",
language = "English",
volume = "821",
pages = "37--42",
editor = "P.M. Anderson and T. Foecke and A. Misra and R.E. Rudd",
booktitle = "Materials Research Society Symposium Proceedings",

}

TY - GEN

T1 - Modeling the elastic fields in epitaxially grown multilayers

AU - Vanamu, Ganesh

AU - Khraishi, Tariq A.

AU - Datye, Abhaya K.

AU - Zaidi, Saleem H.

PY - 2004

Y1 - 2004

N2 - A model was developed to calculate the elastic fields, including strain energy density, in multilayers grown epitaxially on a planar substrate. This model works well for compliant and non-compliant substrates. In particular we illustrate the model for four layer heterostructure and apply it for graded Ge (Si xGe 1-x) grown on a planar silicon substrate. Using the equations for static equilibrium and Hooke's law for isotropic materials under a plane stress condition, the elastic fields associated with each layer were calculated. The strain partitioning in this model reduces to the limiting case of a two-layer structure available in the literature. As it turns out here, strain partitioning is a function of the bulk unstrained lattice parameters, elastic constants and thicknesses of the layers. The model was qualitatively verified by comparing the strain energy density with the dislocation density away from a relatively thick substrate. This model helps shed some light on the factors important in achieving defect free multilayers for optoelectronic devices.

AB - A model was developed to calculate the elastic fields, including strain energy density, in multilayers grown epitaxially on a planar substrate. This model works well for compliant and non-compliant substrates. In particular we illustrate the model for four layer heterostructure and apply it for graded Ge (Si xGe 1-x) grown on a planar silicon substrate. Using the equations for static equilibrium and Hooke's law for isotropic materials under a plane stress condition, the elastic fields associated with each layer were calculated. The strain partitioning in this model reduces to the limiting case of a two-layer structure available in the literature. As it turns out here, strain partitioning is a function of the bulk unstrained lattice parameters, elastic constants and thicknesses of the layers. The model was qualitatively verified by comparing the strain energy density with the dislocation density away from a relatively thick substrate. This model helps shed some light on the factors important in achieving defect free multilayers for optoelectronic devices.

UR - http://www.scopus.com/inward/record.url?scp=14944365969&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=14944365969&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:14944365969

VL - 821

SP - 37

EP - 42

BT - Materials Research Society Symposium Proceedings

A2 - Anderson, P.M.

A2 - Foecke, T.

A2 - Misra, A.

A2 - Rudd, R.E.

ER -