Modeling the effect of P-N junction depth on the output of planer and rectangular textured solar cells

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7 Citations (Scopus)

Abstract

Problem statement: High cost of the solar cells is one of the important limitations in extensively using of the photovoltaic panels. Thin monocrystalline silicon solar cell could be reduce the cost but lost the absorption efficiency. Surface texturing help to enhance absorption. Using of advance texturing by diffraction grating was suggested for high absorption. It is necessary to investigate the scattering effect of diffraction grating with other solar cell parameter for optimization. In first step we concentrate on p-n junction position impact by modeling. Approach: The effect of position of p-n junction on the output current for both micro rectangular texturing and planer surface in solar cell has been investigated by ray tracing. Modeling of nine pairs solar cells with the same texture and planer surfaces but with different p-n junction position are done by using Atlas software. The output short current is a criterion for determining of efficiency performance. By comparing of the short current for each pair we was find the impacts of texturing and p-n junction depth on the monocrystalline thin film. Results: Light scattering due to diffraction grating inside the silicon with rectangular depth of 5 μm and a range of 5-40 μm p-n junction depths are investigated. The difference of short current in textured to bare silicon showed the enhancement from 4-8 μA when the p-n junction depths vary from 5-45 μm. Conclusions: Comparison of short current output confirms the correlation between p-n junction depth and texturing. Advanced texturing improve the solar cell efficiency but the effectiveness change with the p-n junction depth and need a simultaneous optimization for getting the high efficiency solar cell.

Original languageEnglish
Pages (from-to)667-671
Number of pages5
JournalAmerican Journal of Applied Sciences
Volume6
Issue number4
DOIs
Publication statusPublished - 2009

Fingerprint

p-n junctions
solar cells
output
gratings (spectra)
costs
optimization
silicon
ray tracing
light scattering
textures
computer programs
augmentation
thin films
scattering

Keywords

  • Current variation
  • Depth of p-n junction
  • Efficiency
  • Texturing
  • Thin solar cell

ASJC Scopus subject areas

  • General

Cite this

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title = "Modeling the effect of P-N junction depth on the output of planer and rectangular textured solar cells",
abstract = "Problem statement: High cost of the solar cells is one of the important limitations in extensively using of the photovoltaic panels. Thin monocrystalline silicon solar cell could be reduce the cost but lost the absorption efficiency. Surface texturing help to enhance absorption. Using of advance texturing by diffraction grating was suggested for high absorption. It is necessary to investigate the scattering effect of diffraction grating with other solar cell parameter for optimization. In first step we concentrate on p-n junction position impact by modeling. Approach: The effect of position of p-n junction on the output current for both micro rectangular texturing and planer surface in solar cell has been investigated by ray tracing. Modeling of nine pairs solar cells with the same texture and planer surfaces but with different p-n junction position are done by using Atlas software. The output short current is a criterion for determining of efficiency performance. By comparing of the short current for each pair we was find the impacts of texturing and p-n junction depth on the monocrystalline thin film. Results: Light scattering due to diffraction grating inside the silicon with rectangular depth of 5 μm and a range of 5-40 μm p-n junction depths are investigated. The difference of short current in textured to bare silicon showed the enhancement from 4-8 μA when the p-n junction depths vary from 5-45 μm. Conclusions: Comparison of short current output confirms the correlation between p-n junction depth and texturing. Advanced texturing improve the solar cell efficiency but the effectiveness change with the p-n junction depth and need a simultaneous optimization for getting the high efficiency solar cell.",
keywords = "Current variation, Depth of p-n junction, Efficiency, Texturing, Thin solar cell",
author = "F. Jahanshah and Kamaruzzaman Sopian and Zaidi, {Saleem H.} and Othman, {Mohd. Yusof} and Nowshad Amin and Nilofar Asim",
year = "2009",
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language = "English",
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pages = "667--671",
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T1 - Modeling the effect of P-N junction depth on the output of planer and rectangular textured solar cells

AU - Jahanshah, F.

AU - Sopian, Kamaruzzaman

AU - Zaidi, Saleem H.

AU - Othman, Mohd. Yusof

AU - Amin, Nowshad

AU - Asim, Nilofar

PY - 2009

Y1 - 2009

N2 - Problem statement: High cost of the solar cells is one of the important limitations in extensively using of the photovoltaic panels. Thin monocrystalline silicon solar cell could be reduce the cost but lost the absorption efficiency. Surface texturing help to enhance absorption. Using of advance texturing by diffraction grating was suggested for high absorption. It is necessary to investigate the scattering effect of diffraction grating with other solar cell parameter for optimization. In first step we concentrate on p-n junction position impact by modeling. Approach: The effect of position of p-n junction on the output current for both micro rectangular texturing and planer surface in solar cell has been investigated by ray tracing. Modeling of nine pairs solar cells with the same texture and planer surfaces but with different p-n junction position are done by using Atlas software. The output short current is a criterion for determining of efficiency performance. By comparing of the short current for each pair we was find the impacts of texturing and p-n junction depth on the monocrystalline thin film. Results: Light scattering due to diffraction grating inside the silicon with rectangular depth of 5 μm and a range of 5-40 μm p-n junction depths are investigated. The difference of short current in textured to bare silicon showed the enhancement from 4-8 μA when the p-n junction depths vary from 5-45 μm. Conclusions: Comparison of short current output confirms the correlation between p-n junction depth and texturing. Advanced texturing improve the solar cell efficiency but the effectiveness change with the p-n junction depth and need a simultaneous optimization for getting the high efficiency solar cell.

AB - Problem statement: High cost of the solar cells is one of the important limitations in extensively using of the photovoltaic panels. Thin monocrystalline silicon solar cell could be reduce the cost but lost the absorption efficiency. Surface texturing help to enhance absorption. Using of advance texturing by diffraction grating was suggested for high absorption. It is necessary to investigate the scattering effect of diffraction grating with other solar cell parameter for optimization. In first step we concentrate on p-n junction position impact by modeling. Approach: The effect of position of p-n junction on the output current for both micro rectangular texturing and planer surface in solar cell has been investigated by ray tracing. Modeling of nine pairs solar cells with the same texture and planer surfaces but with different p-n junction position are done by using Atlas software. The output short current is a criterion for determining of efficiency performance. By comparing of the short current for each pair we was find the impacts of texturing and p-n junction depth on the monocrystalline thin film. Results: Light scattering due to diffraction grating inside the silicon with rectangular depth of 5 μm and a range of 5-40 μm p-n junction depths are investigated. The difference of short current in textured to bare silicon showed the enhancement from 4-8 μA when the p-n junction depths vary from 5-45 μm. Conclusions: Comparison of short current output confirms the correlation between p-n junction depth and texturing. Advanced texturing improve the solar cell efficiency but the effectiveness change with the p-n junction depth and need a simultaneous optimization for getting the high efficiency solar cell.

KW - Current variation

KW - Depth of p-n junction

KW - Efficiency

KW - Texturing

KW - Thin solar cell

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