Modeling of Si/Ge based two-dimensional photonic crystal nanocavity

Lita Rahmasari, Md Zain Ahmad Rifqi, Abdul Manaf Hashim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This paper has theoretically demonstrated the variation of geometrical parameters for L3 cavity photonic crystal. We have tuned a lattice constant of the photonic crystal to optimize the device. 2D photonic crystal structures with L3 configuration arranged in the triangular lattice is simulated using 2D FDTD (Finite Difference Time Domain) approach. We have tuned the stop band within 1451 nm to 1532 nm wavelength windows. This stop band was achieved with a hole diameter of 150 nm and lattice constant, a of 350 nm. We have also varied the lattice constant to 320 nm, 330 nm, 340 nm, 350 nm and 360 nm respectively by keeping the hole diameter to 150 nm. The Q factor does not show any significant changes with different lattice constant. The highest Q factor of approximately 7000 was obtained with the lattice constant of 350 nm and hole diameter of 150 nm at the resonance wavelength of 1472 nm. The resonance excited by the L3 photonic crystal cavity structure in Si/Ge layer grown on silicon-on-insulator were achieved at 1476 nm with a right combination of lattice constant and hole diameters. This resonance wavelength was obtained at lattice constant 360 nm and hole diameter 150 nm. The highest optical transmission spectra also achieved at this parameter was approximately 30%. The resonance wavelength between this two geometry parameter was almost the same. This result can be utilized in telecommunication wavelength for many applications in the photonic area.

Original languageEnglish
Title of host publicationSecond International Seminar on Photonics, Optics, and Its Applications, ISPhOA 2016
PublisherSPIE
Volume10150
ISBN (Electronic)9781510607514
DOIs
Publication statusPublished - 2016
Event2nd International Seminar on Photonics, Optics, and Its Applications, ISPhOA 2016 - Legian - Kuta, Bali, Indonesia
Duration: 24 Aug 201625 Aug 2016

Other

Other2nd International Seminar on Photonics, Optics, and Its Applications, ISPhOA 2016
CountryIndonesia
CityLegian - Kuta, Bali
Period24/8/1625/8/16

Fingerprint

SiGe
Photonic crystals
Photonic Crystal
Lattice constants
photonics
Wavelength
Modeling
crystals
Q factors
wavelengths
Cavity
Silicon-on-insulator
Finite-difference Time-domain (FDTD)
Triangular Lattice
Crystal Structure
cavities
Silicon
Light transmission
Telecommunications
Photonics

Keywords

  • FDTD
  • L3 cavity
  • Photonic crystal
  • Quality factor
  • Si/Ge

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Cite this

Rahmasari, L., Ahmad Rifqi, M. Z., & Hashim, A. M. (2016). Modeling of Si/Ge based two-dimensional photonic crystal nanocavity. In Second International Seminar on Photonics, Optics, and Its Applications, ISPhOA 2016 (Vol. 10150). [101500D] SPIE. https://doi.org/10.1117/12.2247522

Modeling of Si/Ge based two-dimensional photonic crystal nanocavity. / Rahmasari, Lita; Ahmad Rifqi, Md Zain; Hashim, Abdul Manaf.

Second International Seminar on Photonics, Optics, and Its Applications, ISPhOA 2016. Vol. 10150 SPIE, 2016. 101500D.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Rahmasari, L, Ahmad Rifqi, MZ & Hashim, AM 2016, Modeling of Si/Ge based two-dimensional photonic crystal nanocavity. in Second International Seminar on Photonics, Optics, and Its Applications, ISPhOA 2016. vol. 10150, 101500D, SPIE, 2nd International Seminar on Photonics, Optics, and Its Applications, ISPhOA 2016, Legian - Kuta, Bali, Indonesia, 24/8/16. https://doi.org/10.1117/12.2247522
Rahmasari L, Ahmad Rifqi MZ, Hashim AM. Modeling of Si/Ge based two-dimensional photonic crystal nanocavity. In Second International Seminar on Photonics, Optics, and Its Applications, ISPhOA 2016. Vol. 10150. SPIE. 2016. 101500D https://doi.org/10.1117/12.2247522
Rahmasari, Lita ; Ahmad Rifqi, Md Zain ; Hashim, Abdul Manaf. / Modeling of Si/Ge based two-dimensional photonic crystal nanocavity. Second International Seminar on Photonics, Optics, and Its Applications, ISPhOA 2016. Vol. 10150 SPIE, 2016.
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