Modeling and experiments on epitaxially grown multilayers with implications to critical thickness

Ganesh Vanamu, Joshua Robbins, Tariq A. Khraishi, Abhaya K. Datye, Saleem H. Zaidi

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

In this study, using the equations for static equilibrium and Hooke's law for isotropic materials under a plane stress condition, the elastic fields associated with each layer have been calculated. A model has been developed to calculate the elastic fields in multilayers grown epitaxially on a planar substrate. The strain partitioning in this model reduces to the limiting case of a two-layer structure that is available in the literature. We have chosen a particular system (SiGe) and calculated strain energy density for any number (N) of layers of graded Ge (Si xGe 1-x) on silicon. The model was compared with experiment for graded SiGe grown over a planar silicon substrate. The results revealed qualitative agreement between the calculated strain energy density and the experimentally observed dislocation density in the layers. The effect of the choice of a strain partitioning model on the calculation of a film/epilayer critical thickness is demonstrated.

Original languageEnglish
Pages (from-to)522-527
Number of pages6
JournalJournal of Electronic Materials
Volume34
Issue number5
Publication statusPublished - May 2005
Externally publishedYes

Fingerprint

Multilayers
Silicon
Strain energy
flux density
Experiments
plane stress
Epilayers
silicon
Substrates

Keywords

  • Critical thickness
  • Epitaxial multilayers
  • Graded Ge (Si Ge )
  • Si
  • Stress

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Science(all)
  • Physics and Astronomy (miscellaneous)

Cite this

Modeling and experiments on epitaxially grown multilayers with implications to critical thickness. / Vanamu, Ganesh; Robbins, Joshua; Khraishi, Tariq A.; Datye, Abhaya K.; Zaidi, Saleem H.

In: Journal of Electronic Materials, Vol. 34, No. 5, 05.2005, p. 522-527.

Research output: Contribution to journalArticle

Vanamu, Ganesh ; Robbins, Joshua ; Khraishi, Tariq A. ; Datye, Abhaya K. ; Zaidi, Saleem H. / Modeling and experiments on epitaxially grown multilayers with implications to critical thickness. In: Journal of Electronic Materials. 2005 ; Vol. 34, No. 5. pp. 522-527.
@article{1a473b0c54bd45ea9f550ad0e118118a,
title = "Modeling and experiments on epitaxially grown multilayers with implications to critical thickness",
abstract = "In this study, using the equations for static equilibrium and Hooke's law for isotropic materials under a plane stress condition, the elastic fields associated with each layer have been calculated. A model has been developed to calculate the elastic fields in multilayers grown epitaxially on a planar substrate. The strain partitioning in this model reduces to the limiting case of a two-layer structure that is available in the literature. We have chosen a particular system (SiGe) and calculated strain energy density for any number (N) of layers of graded Ge (Si xGe 1-x) on silicon. The model was compared with experiment for graded SiGe grown over a planar silicon substrate. The results revealed qualitative agreement between the calculated strain energy density and the experimentally observed dislocation density in the layers. The effect of the choice of a strain partitioning model on the calculation of a film/epilayer critical thickness is demonstrated.",
keywords = "Critical thickness, Epitaxial multilayers, Graded Ge (Si Ge ), Si, Stress",
author = "Ganesh Vanamu and Joshua Robbins and Khraishi, {Tariq A.} and Datye, {Abhaya K.} and Zaidi, {Saleem H.}",
year = "2005",
month = "5",
language = "English",
volume = "34",
pages = "522--527",
journal = "Journal of Electronic Materials",
issn = "0361-5235",
publisher = "Springer New York",
number = "5",

}

TY - JOUR

T1 - Modeling and experiments on epitaxially grown multilayers with implications to critical thickness

AU - Vanamu, Ganesh

AU - Robbins, Joshua

AU - Khraishi, Tariq A.

AU - Datye, Abhaya K.

AU - Zaidi, Saleem H.

PY - 2005/5

Y1 - 2005/5

N2 - In this study, using the equations for static equilibrium and Hooke's law for isotropic materials under a plane stress condition, the elastic fields associated with each layer have been calculated. A model has been developed to calculate the elastic fields in multilayers grown epitaxially on a planar substrate. The strain partitioning in this model reduces to the limiting case of a two-layer structure that is available in the literature. We have chosen a particular system (SiGe) and calculated strain energy density for any number (N) of layers of graded Ge (Si xGe 1-x) on silicon. The model was compared with experiment for graded SiGe grown over a planar silicon substrate. The results revealed qualitative agreement between the calculated strain energy density and the experimentally observed dislocation density in the layers. The effect of the choice of a strain partitioning model on the calculation of a film/epilayer critical thickness is demonstrated.

AB - In this study, using the equations for static equilibrium and Hooke's law for isotropic materials under a plane stress condition, the elastic fields associated with each layer have been calculated. A model has been developed to calculate the elastic fields in multilayers grown epitaxially on a planar substrate. The strain partitioning in this model reduces to the limiting case of a two-layer structure that is available in the literature. We have chosen a particular system (SiGe) and calculated strain energy density for any number (N) of layers of graded Ge (Si xGe 1-x) on silicon. The model was compared with experiment for graded SiGe grown over a planar silicon substrate. The results revealed qualitative agreement between the calculated strain energy density and the experimentally observed dislocation density in the layers. The effect of the choice of a strain partitioning model on the calculation of a film/epilayer critical thickness is demonstrated.

KW - Critical thickness

KW - Epitaxial multilayers

KW - Graded Ge (Si Ge )

KW - Si

KW - Stress

UR - http://www.scopus.com/inward/record.url?scp=20344378701&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=20344378701&partnerID=8YFLogxK

M3 - Article

VL - 34

SP - 522

EP - 527

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

SN - 0361-5235

IS - 5

ER -